1
FN7020
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2003. All Rights Reserved. Elantec is a registered trademark of Elantec Semiconductor, Inc.
All other trademarks mentioned are the property of their respective owners.
EL2001
Low Power, 70MHz Buffer Amplifier
The EL2001 is a low cost monolithic,
high slew rate, buffer amplifier. Built
using the Elantec monolithic
Complementary Bipolar process, this patented buffer has a
-3dB bandwidth of 70MHz, and delivers 100mA, yet draws
only 1.3mA of supply current. It typically operates from 15V
power supplies but will work with as little as 5V.
This high speed buffer may be used in a wide variety of
applications in military, video and medical systems. A typical
example is a general purpose op amp output current booster
where the buffer must have sufficiently high bandwidth and
low phase shift at the maximum frequency of the op amp.
Elantec's products and facilities comply with MIL-I-45208A,
and other applicable quality specifications. For information
on Elantec's processing, see the Elantec document, QRA-1:
Elantec's Processing, Monolithic Integrated Circuits.
Features
1.3mA supply current
70MHz bandwidth
2000V/s slew rate
Low bias current, 1A typical
100mA output current
Short circuit protected
Low cost
Stable with capacitive loads
Wide supply range 5V to 15V
No thermal runaway
Applications
Op amp output current booster
Cable/line driver
A/D input buffer
Low standby current systems
Ordering Information
PART NUMBER
TEMP. RANGE
PACKAGE
PKG. NO.
EL2001ACN
0C to +75C
PDIP
MDP0031
EL2001CM
0C to +75C
20-Pin SOL
MDP0027
EL2001CN
0C to +75C
PDIP
MDP0031
Pinouts
EL2001
(8-PIN PDIP, SO)
TOP VIEW
EL2001
(20-PIN SOL)
TOP VIEW
NOTE: Non-designated pins are no connects and are not electrically connected internally.
Manufactured under U.S. Patent No. 4,833,424, 4,827,223 U.K. Patent No. 2217134
Data Sheet
December 1995, Rev. G
OBSO
LET
E PR
ODU
CT
NO R
ECOM
MEN
DED
REP
LAC
EME
NT
cont
act o
ur T
echn
ical
Sup
port
Cen
ter a
t
1-88
8-IN
TER
SIL
or w
ww.i
nter
sil.c
om/t
sc
2
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests
are at the specified temperature and are pulsed tests, therefore: T
J
= T
C
= T
A
Absolute Maximum Ratings
(T
A
= 25C)
V
S
Supply Voltage (V+ - V-) . . . . . . . . . . . . . . . . . . . . 18V or 36V
V
IN
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15V or V
S
If the input exceeds the ratings shown (or the supplies) or if the input to output
voltage exceeds 7.5V then the input current must be limited to 50 mA. See
the applications section for more information.
I
IN
Input Current (See above note) . . . . . . . . . . . . . . . . . . .50 mA
P
D
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . See Curves
The maximum power dissipation depends on package type, ambient
temperature and heat sinking. See the characteristic curves for more details.
Output Short Circuit Duration . . . . . . . . . . . . . . . . . . . . . Continuous
A heat sink is required to keep the junction temperature below the absolute
maximum when the output is short circuited.
T
A
Operating Temperature Range . . . . . . . . . . . . . 0C to +75C
T
J
Operating Junction Temperature. . . . . . . . . . . . . . . . . . 150C
T
ST
Storage Temperature . . . . . . . . . . . . . . . . . . -65C to +150C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
V
S
= 12V, R
S
= 50
, unless otherwise specified
PARAMETER
DESCRIPTION
TEST CONDITIONS
LIMITS
UNITS
V
IN
LOAD
TEMP
MIN
TYP
MAX
V
OS
Offset Voltage
0
25C
-10
2
I
mV
T
MIN
, T
MAX
-15
+15
mV
0
25C
-30
2
+30
mV
T
MIN
, T
MAX
-40
+40
mV
I
IN
Input Current
0
25C
-3
1
+3 A
T
MIN
, T
MAX
-6
+6
A
0
25C
-5
1
+5
A
T
MIN
, T
MAX
-10
+10
A
R
IN
Input Resistance
12V
100
25
1
8
M
T
MIN
, T
MAX
0.5
M
A
V1
Voltage Gain
12V
25C
0.990
0.998
V/V
T
MIN
, T
MAX
0.985
V/V
A
V2
Voltage Gain
10V
100
25C
0.83
0.93
V/V
T
MIN
, T
MAX
0.80
V/V
A
V3
Voltage Gain with V
S
= 5V
3V
100
25C
0.82
0.89
V/V
T
MIN
, T
MAX
0.79
V/V
V
O
Output Voltage Swing
12V
100
25C
10
11
V
T
MIN
, T
MAX
9.5
V
R
OUT
Output Resistance
2V
100
25C
10
15
T
MIN
, T
MAX
18
I
OUT
Output Current
12V
(Note 1)
25C
100
160
mA
T
MIN
, T
MAX
95
mA
I
S
Supply Current
0
25C
1.3
2.0
mA
T
MIN
, T
MAX
2.5
mA
PSRR
Supply Rejection (Note 2)
0
25C
60
75
dB
T
MIN
, T
MAX
50
dB
t
R
Rise Time
0.5V
100
25C
4.2
ns
t
D
Propagation Delay
0.5V
100
25C
2.0
ns
EL2001
3
Typical Performance Curves
SR
Slew Rate (Note 3)
10V
100
25C
1200
2000
V/s
NOTES:
1. Force the input to +12V and the output to +10V and measure the output current. Repeat with -12 V
IN
and -10V on the output.
2. V
OS
is measured at V
S
+ = +4.5V, V
S
- = -4.5V and at V
S
+ = +18V, V
S
- = -18V. Both supplies are changed simultaneously.
3. Slew rate is measured between V
OUT
= +5V and -5V.
Electrical Specifications
V
S
= 12V, R
S
= 50
, unless otherwise specified (Continued)
PARAMETER
DESCRIPTION
TEST CONDITIONS
LIMITS
UNITS
V
IN
LOAD
TEMP
MIN
TYP
MAX
Offset Voltage
vs Temperature
Voltage Gain
vs Temperature
Output Voltage Swing
vs Temperature
Voltage Gain
vs Source Resistance
Voltage Gain
vs Input Voltage
Supply Current
vs Supply Voltage
Input Bias Current
vs Input Voltage
Slew Rate
vs Supply Voltage
Slew Rate
vs Capacitive Load
EL2001
4
Typical Performance Curves
(Continued)
Voltage Gain vs Frequency
for Various Resistive Loads
Voltage Gain
vs Frequency for Various
Capacitive Loads; R
L
= 100
Voltage Gain
vs Frequency for Various
Capacitive Loads; R
L
=
Power Supply Rejection Ratio
vs Frequency
-3dB Bandwidth
vs Supply Voltage
Phase Shift vs Frequency
for Various Capacitive Loads
Output Impedance vs Frequency
Reverse Isolation vs Frequency
Small Signal Output Resistance
vs Output Current
8-Pin Plastic DIP
Maximum Power Dissipation
vs Ambient Temperature
20-Pin SOL
Maximum Power Dissipation
vs Ambient Temperature
Short Circuit Current
vs Temperature
EL2001
5
Typical Performance Curves
(Continued)
Burn-In Circuit
Simplified Schematic
Application Information
The EL2001 is a monolithic buffer amplifier built on Elantec's
proprietary dielectric isolation process that produces NPN
and PNP transistors with essentially identical DC and AC
characteristics. The EL2001 takes full advantage of the
complementary process with a unique circuit topology.
Elantec has applied for two patents based on the EL2001's
topology. The patents relate to the base drive and feedback
mechanism in the buffer. This feedback makes 2000V/s
slew rates with 100
loads possible with very low supply
current.
Power Supplies
The EL2001 may be operated with single or split supplies
with total voltage difference between 10V (5V) and 36V
(18V). It is not necessary to use equal split value supplies.
For example -5V and +12V would be excellent for signals
from -2V to +9V.
Bypass capacitors from each supply pin to ground are highly
recommended to reduce supply ringing and the interference
it can cause. At a minimum, 1F tantalum capacitor with
short pins should be used for both supplies.
Input Characteristics
The input to the EL2001 looks like a resistance in parallel
with about 3.5pF in addition to a DC bias current. The DC
bias current is due to the miss-match in beta and collector
current between the NPN and PNP transistors connected to
the input pin. The bias current can be either positive or
negative. The change in input current with input voltage
(R
IN
) is affected by the output load, beta and the internal
boost. R
IN
can actually appear negative over portions of the
input range; typical input current curves are shown in the
characteristic curves. Internal clamp diodes from the input to
the output are provided. These diodes protect the transistor
base emitter junctions and limit the boost current during slew
to avoid saturation of internal transistors. The diodes begin
conduction at about 2.5V input to output differential. When
that happens the input resistance drops dramatically. The
diodes are rated at 50mA. When conducting they have a
series resistance of about 20
. There is also 100
in series
with the input that limits input current. Above 7.5V
differential input to output, additional series resistance
should be added.
Source Impedance
The EL2001 has good input to output isolation. When the
buffer is not used in a feedback loop, capactive and resistive
sources up to 1Mb present no oscillation problems. Care
must be used in board layout to minimize output to input
coupling. CAUTION: When using high source impedances
(R
S
> 100k
), significant gain errors can be observed due to
output offset, load resistor, and the action of the boost circuit.
See typical performance curves.
Large Signal Response
Small Signal Response
EL2001
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