1
FN7021
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2003. All Rights Reserved. Elantec is a registered trademark of Elantec Semiconductor, Inc.
All other trademarks mentioned are the property of their respective owners.
EL2002
Low Power, 180MHz Buffer Amplifier
The EL2002 is a low cost monolithic,
high slew rate, buffer amplifier. Built
using the Elantec monolithic
Complementary Bipolar process, this patented buffer has a
-3dB bandwidth of 180MHz, and delivers 100mA, yet draws
only 5mA of supply current. It typically operates from 15V
power supplies but will work with as little as 5V.
This high speed buffer may be used in a wide variety of
applications in military, video and medical systems. Typical
examples include fast op-amp output current boosters,
coaxial cable drivers and A/D converter input buffers.
Elantec's products and facilities comply with MIL-I-45208A,
and other applicable quality specifications. For information
on Elantec's processing, see the Elantec document, QRA-1:
Elantec's Processing, Monolithic Integrated Circuits.
Features
180MHz bandwidth
2000V/s slew rate
Low bias current, 3A typical
100mA output current
5mA supply current
Short circuit protected
Low cost
Stable with capacitive loads
Wide supply range 5V to 15V
No thermal runaway
Applications
Op amp output current booster
Cable/line driver
A/D input buffer
Isolation buffer
Ordering Information
PART NUMBER
TEMP. RANGE
PACKAGE
PKG. NO.
EL2002ACN
0C to +75C
P-DIP
MDP0031
EL2002CM
0C to +75C
20-Pin SOL
MDP0027
EL2002CN
0C to +75C
P-DIP
MDP0031
Pinouts
EL2002
(8-PIN DIP)
TOP VIEW
EL2002
(20-PIN SOL)
TOP VIEW
Manufactured under U.S. Patent No. 4,833,424, 4,827,223 U.K. Patent No. 2217134
Data Sheet
December 1995, Rev. D
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1-88
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2
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests
are at the specified temperature and are pulsed tests, therefore: T
J
= T
C
= T
A
Absolute Maximum Ratings
(T
A
=25C)
V
S
Supply Voltage (V+ - V-) . . . . . . . . . . . . . . . . . . . . 18V or 36V
V
IN
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15V or V
S
If the input exceeds the ratings shown (or the supplies) or if the input to output
voltage exceeds 7.5V then the input current must be limited to 50mA. See
the applications section for more information.
I
IN
Input Current (See above note) . . . . . . . . . . . . . . . . . . . 50mA
P
D
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . See Curves
The maximum power dissipation depends on package type, ambient
temperature and heat sinking. See the characteristic curves for more details.
Output Short Circuit Duration . . . . . . . . . . . . . . . . . . . . . Continuous
A heat sink is required to keep the junction temperature below the absolute
maximum when the output is short circuited.
T
A
Operating Temperature Range . . . . . . . . . . . . . 0C to +75C
T
J
Operating Junction Temperature. . . . . . . . . . . . . . . . . . 150C
T
ST
Storage Temperature . . . . . . . . . . . . . . . . . . -65C to +150C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
V
S
= 15V, R
S
= 50
, unless otherwise specified.
PARAMETER
DESCRIPTION
TEST CONDITIONS
LIMITS
UNITS
V
IN
LOAD
TEMP
MIN
TYP
MAX
V
OS
Offset Voltage
0
25C
-15
5
+15
mV
T
MIN
, T
MAX
-20
+20
mV
0
25C
-40
10
+40
mV
T
MIN
, T
MAX
-50
+50
mV
I
IN
Input Current
0
25C
-10
3
+10
A
T
MIN
, T
MAX
-15
+15
A
0
25C
-15
5
+15
A
T
MIN
, T
MAX
-20
+20
A
R
IN
Input Resistance
+12V
100
25C
1
3
M
T
MIN
, T
MAX
0.1
M
A
V1
Voltage Gain
12V
25C
0.990
0.998
V/V
T
MIN
, T
MAX
0.985
V/V
A
V2
Voltage Gain
10V
100
25C
0.85
0.93
V/V
T
MIN
, T
MAX
0.83
V/V
A
V3
Voltage Gain
with V
S
= 5V
3V
100
25C
0.83
0.91
V/V
T
MIN
, T
MAX
0.80
V/V
V
O
Output Voltage Swing
12V
100
25C
10
11
V
T
MIN
, T
MAX
9.5
V
R
OUT
Output Resistance
2V
100
25C
8
13
T
MIN
, T
MAX
15
I
OUT
Output Current
12V
(Note 1)
25C
+100
+160
mA
T
MIN
, T
MAX
95
mA
I
S
Supply Current
0
25C
5
7.5
mA
T
MIN
, T
MAX
10
mA
PSRR
Supply Rejection (Note 2)
0
25C
60
75
dB
T
MIN
, T
MAX
50
dB
t
R
Rise Time
0.5V
100
25C
2.8
ns
t
D
Propagation Delay
0.5V
100
25C
1.5
ns
EL2002
3
NOTES:
1. Force the input to +12V and the output to +10V and measure the output current. Repeat with -12V
IN
and -10V on the output.
2. V
OS
is measured at V
S
+ = +4.5V, V
S
- = -4.5V and V
S
+ = +18V, V
S
- = 18V. Both supplies are changed simultaneously.
3. Slew rate is measured between V
OUT
= +5V and -5V.
SR
Slew Rate (Note 3)
10V
100
25C
1200
2000
V/s
Electrical Specifications
V
S
= 15V, R
S
= 50
, unless otherwise specified. (Continued)
PARAMETER
DESCRIPTION
TEST CONDITIONS
LIMITS
UNITS
V
IN
LOAD
TEMP
MIN
TYP
MAX
EL2002
4
Typical Performance Curves
Offset Voltage
vs Temperature
Voltage Gain
vs Temperature
Output Voltage Swing
vs Temperature
Supply Current
vs Supply Voltage
Voltage Gain
vs Input Voltage
Voltage Gain
vs Source Resistance
Input Bias Current
vs Input Voltage
at Various Temperatures
Input Bias Current
vs Input Voltage
Slew Rate vs
Supply Voltage
EL2002
5
Typical Performance Curves
(Continued)
Slew Rate
vs Load Capacitance
Voltage Gain vs Frequency
for Various Resistive Loads
Voltage Gain
vs Frequency for Various
Capacitive Loads; R
L
= 100
Voltage Gain
vs Frequency for Various
Capacitive Loads; R
L
=
Phase Shift vs Frequency
for Various Capacitive Loads
-3dB Bandwidth
vs Supply Voltage
Power Supply Rejection Ratio
vs Frequency
Output Impedance vs
Frequency
Reverse Isolation vs Frequency
EL2002
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