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1
FN7504.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
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Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2004, 2005. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
PRELIMINARY
EL8178
Micropower Single Supply Rail-to-Rail
Input-Output Precision Op Amp
The EL8178 is a micropower precision operational amplifier
optimized for single supply operation at 5V and can operate
down to 2.4V.
The EL8178 draws minimal supply current while meeting
excellent DC-accuracy noise and output drive specifications.
Competing devices seriously degrade these parameters to
achieve micropower supply current. Offset current, voltage
and current noise, slew rate, and gain-bandwidth product are
all two to ten times better than on previous micropower op
amps.
The EL8178 can be operated from one lithium cell or two
Ni-Cd batteries. The input range includes both positive and
negative rail. The output swings to both rails.
Features
50A supply current
100V max offset voltage
1pA input bias current
250kHz gain-bandwidth product
0.13V/s slew rate
Single supply operation down to 2.4V
Rail-to-rail input and output
Output sources and sinks 26mA load current
Pb-Free plus anneal available (RoHS compliant)
Applications
Battery- or solar-powered systems
4mA to 20mA current loops
Handheld consumer products
Medical devices
Thermocouple amplifiers
Photodiode pre amps
pH probe amplifiers
Pinouts
EL8178
(6 LD SOT-23)
TOP VIEW
EL8178
(8 LD SO)
TOP VIEW
Ordering Information
PART NUMBER
PART
MARKING
TAPE &
REEL
PACKAGE
PKG.
DWG. #
EL8178AIW-T7
BBHA
7"
(3K pcs)
6 Ld SOT-23 MDP0038
EL8178AIW-T7A
BBHA
7"|
(250 pcs)
6 Ld SOT-23 MDP0038
EL8178AIWZ-T7
(Note)
BBPA
7"
(3K pcs)
6 Ld SOT-23
(Pb-free)
MDP0038
EL8178AIWZ-T7A
(Note)
BBPA
7"
(250 pcs)
6 Ld SOT-23
(Pb-free)
MDP0038
EL8178BIW-T7
BBHA
7"
(3K pcs)
6 Ld SOT-23 MDP0038
EL8178BIW-T7A
BBHA
7"
(250 pcs)
6 Ld SOT-23 MDP0038
EL8178BIWZ-T7
(Note)
BBPA
7"
(3K pcs)
6 Ld SOT-23
(Pb-free)
MDP0038
EL8178BIWZ-T7A
(Note)
BBPA
7"
(250 pcs)
6 Ld SOT-23
(Pb-free)
MDP0038
EL8178ISZ
(Note)
8178ISZ
-
8 Ld SO
(Pb-free)
MDP0027
EL8178ISZ-T7
(Note)
8178ISZ
7"
8 Ld SO
(Pb-free)
MDP0027
EL8178ISZ-T13
(Note)
8178ISZ
13"
8 Ld SO
(Pb-free)
MDP0027
NOTE: Intersil Pb-free plus anneal products employ special Pb-free
material sets; molding compounds/die attach materials and 100% matte
tin plate termination finish, which are RoHS compliant and compatible
with both SnPb and Pb-free soldering operations. Intersil Pb-free
products are MSL classified at Pb-free peak reflow temperatures that
meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
1
2
3
6
4
5
+ -
OUT
VS-
IN+
VS+
ENABLE
IN-
1
2
3
4
8
7
6
5
-
+
NC
IN-
IN+
ENABLE
VS+
VOUT
VS-
NC
Data Sheet
October 5, 2005
2
FN7504.2
October 5, 2005
Absolute Maximum Ratings
(T
A
= 25C)
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5V
Current into I
N
+, I
N
-, or ENABLE. . . . . . . . . . . . . . . . . . . . . . . . 5mA
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to V
S
+ 0.5V
Output Short-Circuit Duration . . . . . . . . . . . . . . . . . . . . . . .Indefinite
Ambient Operating Temperature Range . . . . . . . . . .-40C to +85C
Storage Temperature Range . . . . . . . . . . . . . . . . . .-65C to +150C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests
are at the specified temperature and are pulsed tests, therefore: T
J
= T
C
= T
A
Electrical Specifications
V
S
= 5V, 0V, V
CM
= 0.1V, V
O
= 1.4V, T
A
= 25C unless otherwise specified.
PARAMETER
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
V
OS
Input Offset Voltage
Grade A
50
100
V
Grade B
110
400
V
Long Term Input Offset Voltage Stability
TBD
V/Mo
Input Offset Drift vs Temperature
EL8178IW
1.9
V/C
EL8178IS
1.1
V/C
I
B
Input Bias Current
1
50
pA
e
N
Input Noise Voltage Density
f
O
= 1kHz
35
nV/
Hz
CMIR
Input Voltage Range
Guaranteed by CMRR test
0
5
V
CMRR
Input Voltage Range
0
5
V
CMRR
Common-Mode Rejection Ratio
V
CM
= 0V to 5V
80
100
dB
PSRR
Power Supply Rejection Ratio
V
S
= 3.3V to 5V
80
100
dB
A
VOL
Large Signal Voltage Gain
V
O
= 0.5V to 4.5V, R
L
= 100k
100
400
V/mV
V
O
= 0.5V to 4.5V, R
L
= 1k
15
V/mV
V
OUT
Maximum Output Voltage Swing
Output low, R
L
= 100k
3
6
mV
Output low, R
L
= 1k
130
200
mV
Output high, R
L
= 100k
4.994
4.997
V
Output high, R
L
= 1k
4.8
4.88
V
SR
Slew Rate
0.09
0.13
0.17
V/s
GBW
Gain Bandwidth Product
f
O
= 100kHz
400
kHz
I
S,ON
Supply Current, Enabled
40
50
75
A
I
S,OFF
Supply Current, Disabled
3
10
A
I
O
+
Short Circuit Output Current
R
L
= 10
18
31
mA
I
O
-
Short Circuit Output Current
R
L
= 10
17
26
mA
V
S
Minimum Supply Voltage
2.2 2.4 V
V
INH
Enable Pin High Level
2
V
V
INL
Enable Pin Low Level
0.8
V
I
ENH
Enable Pin Input Current
V
EN
= 5V
0.25
0.7
2
A
I
ENL
Enable Pin Input Current
V
EN
= 0V
-0.5
0
+0.5
A
V
OS
Time
------------------
V
OS
T
----------------
EL8178
3
FN7504.2
October 5, 2005
Typical Performance Curves
FIGURE 1. UNITY GAIN FREQUENCY RESPONSE vs
SUPPLY VOLTAGE
FIGURE 2. FREQUENCY RESPONSE vs CLOSED LOOP GAIN
FIGURE 3. SUPPLY CURRENT vs SUPPLY VOLTAGE
FIGURE 4. INPUT OFFSET VOLTAGE vs OUTPUT VOLTAGE
FIGURE 5. INPUT OFFSET VOLTAGE vs COMMON-MODE
INPUT VOLTAGE
FIGURE 6. INPUT BIAS, OFFSET CURRENT vs COMMON-
MODE INPUT VOLTAGE
-3
-2
-1
0
1
1K
10K
100K
1M
V
S
= 1.0V
V
S
= 2.5V
V
S
= 1.25
MA
GNITUDE (dB)
FREQUENCY (Hz)
-20
-10
0
10
20
30
40
50
60
70
80
1
10
100
1K
10K
100K 1M
10M
FREQUENCY (Hz)
GAI
N
(
d
B)
Gain = 200
Gain = 1K
Gain = 500
Gain = 100
Gain = 10
Gain = 1V/V
Gain = 5
Gain = 2
2
3
4
5.5
0
SUPPLY VOLTAGE (V)
SUPP
L
Y
CURRENT
(
A)
2.5
10
20
50
60
30
40
3.5
5
4.5
-0.5
5.5
-200
OUTPUT VOLTAGE (V)
INP
U
T OFFSE
T
VO
L
T
AGE (V)
-100
0
200
100
0.5
1.5
2.5
3.5
4.5
A
V
= -1
V
CM
= V
DD
/2
-0.5
5.5
-250
COMMON-MODE INPUT VOLTAGE (V)
I
N
PUT O
F
FS
ET V
O
L
T
AGE
(V
)
-150
-50
250
150
0.5
1.5
2.5
3.5
4.5
50
-0.5
5.5
-20
COMMON-MODE INPUT VOLTAGE (V)
INPUT BIAS, OF
FS
ET CURRENT
(f
A
)
-10
0
20
0.5
1.5
2.5
3.5
4.5
10
I
B
+
I
B
-
I
OS
EL8178
4
FN7504.2
October 5, 2005
FIGURE 7. A
VOL
vs FREQUENCY @ 1k
LOAD
FIGURE 8.
OPEN LOOP GAIN AND PHASE
vs FREQUENCY @
100k
FIGURE 9. CMRR vs FREQUENCY
FIGURE 10. PSRR vs FREQUENCY
FIGURE 11. VOLTAGE NOISE
FIGURE 12. V
OS
vs TEMPERATURE
Typical Performance Curves
(Continued)
-20
GAI
N
(d
B)
0
20
80
100
40
60
10
10K
1M
FREQUENCY (Hz)
100
-150
P
HASE ()
200
150
100
50
0
-50
-100
100K
1K
PHASE
GAIN
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
100
110
1
10
100
1K
10K
100K
1M
10M
FREQUENCY (Hz)
GAIN (d
B)
-40
-20
0
20
40
60
80
100
GAIN
PHASE
P
HASE ()
0
20
40
60
80
100
120
1
10
100
1K
10K
100K
1M
FREQUENCY (Hz)
CMRR (dB
)
-20
-10
0
10
20
30
40
50
60
70
80
90
100
110
120
1
10
100
1K
10K
100K
1M
FREQUENCY (Hz)
P
O
WER SUPP
LY
RE
JECTION
RATIO (dB)
PSRR-
PSRR+
PSRR-
PSRR+
1
10
100
1000
1
10
100
1K
10K
100K
FREQUENCY (Hz)
V
O
LTA
G
E
N
O
IS
E (
n
V/
Hz
)
-150
-100
-50
0
50
100
150
0
10
20
30
40
50
60
70
80
90 100
TEMPERATURE (C)
INPUT OF
FSET VO
LTAG
E
(V)
10 SAMPLES
EL8178
5
FN7504.2
October 5, 2005
FIGURE 13. EL8178 SOIC V
OS
vs TEMPERATURE (V
S
= 5V)
FIGURE 14. EL8178 SOT VOS vs TEMPERATURE (V
S
= 5V)
FIGURE 15. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 16. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
Typical Performance Curves
(Continued)
TEMPERATURE (C)
-400
-300
-200
-100
0
100
200
300
400
-60
-40
-20
0
20
40
60
80
100 120
V
OS
(
V
)
35 SOIC SAMPLES
TYPICAL = 1.1V/C
TEMPERATURE (C)
-800
-600
-400
-200
0
200
400
600
800
-60
-40
-20
0
20
40
60
80
100 120
V
OS
(V)
35 6-PIN SOT23 SAMPLES
TYPICAL = 1.9V/C
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
0
P
O
WER DISSIP
A
TION (W)
0.4
1
0.8
0.2
0.6
0
100
125
150
AMBIENT TEMPERATURE (C)
50
25
75 85
435mW
909mW
JA
=230
C/W
SOT
23-6
JA
=1
10
C
/W
SO
8
JEDEC JESD51-3 LOW EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
0
P
O
WER DISSIP
A
TION (W)
0.2
0.7
0.6
0.1
0.4
0.5
0.3
0
100
125
150
AMBIENT TEMPERATURE (C)
50
25
75 85
391mW
625mW
JA
=1
60
C
/W
SO
8
JA
=25
6C
/W
SO
T23
-6
EL8178
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