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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Star*PowerTM is a trademark of Intersil Corporation.
1-888-INTERSIL or 321-724-7143
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Intersil and Design is a trademark of Intersil Corporation.
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Copyright Intersil Corporation 2000
FSGYE230R
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFET
Intersil Star*Power Rad Hard
MOSFETs have been specifically
developed for high performance
applications in a commercial or
military space environment.
Star*Power MOSFETs offer the system designer both
extremely low r
DS(ON)
and Gate Charge allowing the
development of low loss Power Subsystems. Star*Power
Gold FETs combine this electrical capability with total dose
radiation hardness up to 100K RADs while maintaining the
guaranteed performance for SEE (Single Event Effects)
which the Intersil FS families have always featured.
The Intersil family of Star*Power FETs includes a series of
devices in various voltage, current and package styles. The
portfolio consists of Star*Power and Star*Power Gold
products. Star*Power FETs are optimized for total dose and
r
DS(ON)
while exhibiting SEE capability at full rated voltage
up to an LET of 37. Star*Power Gold FETs have been
optimized for SEE and Gate Charge combining SEE
performance to 80% of the rated voltage for an LET of 82
with extremely low gate charge characteristics.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.
Reliability screening is available as either TXV, or Space
equivalent of MIL-S-19500.
Formerly available as type TA45230W.
Features
12A, 200V, r
DS(ON)
= 0.150
UIS Rated
Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 82MeV/mg/cm
2
with
V
DS
up to 80% of Rated Breakdown and
V
GS
of 5V Off-Bias
Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
AS
Photo Current
- 3.0nA Per-RAD (Si)/s Typically
Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm
2
- Usable to 1E14 Neutrons/cm
2
Symbol
Packaging
SMD.5
Ordering Information
RAD LEVEL
SCREENING LEVEL
PART NUMBER/BRAND
10K
Engineering Samples
FSGYE230D1
100K
TXV
FSGYE230R3
100K
Space
FSGYE230R4
TM
D
G
S
Data Sheet
May 2000
File Number
4853.1
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
FSGYE230R
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
200
V
Drain to Gate Voltage (R
GS
= 20k
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
200
V
Continuous Drain Current
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
12
A
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
7
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
40
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
30
V
Maximum Power Dissipation
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
42
W
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
17
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.33
W/
o
C
Single Pulsed Avalanche Current, L = 100
H, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . I
AS
36
A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
S
12
A
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
40
A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(Distance >0.063in (1.6mm) from Case, 10s Max)
300
o
C
Weight (Typical)
1.0 (Typ)
g
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 1mA, V
GS
= 0V
200
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
,
I
D
= 1mA
T
C
= -55
o
C
-
-
5.5
V
T
C
= 25
o
C
2.0
-
4.5
V
T
C
= 125
o
C
1.0
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 160V,
V
GS
= 0V
T
C
= 25
o
C
-
-
25
A
T
C
= 125
o
C
-
-
250
A
Gate to Source Leakage Current
I
GSS
V
GS
=
30V
T
C
= 25
o
C
-
-
100
nA
T
C
= 125
o
C
-
-
200
nA
Drain to Source On-State Voltage
V
DS(ON)
V
GS
= 12V, I
D
= 12A
-
-
1.86
V
Drain to Source On Resistance
r
DS(ON)12
I
D
= 7A,
V
GS
= 12V
T
C
= 25
o
C
-
0.120
0.150
T
C
= 125
o
C
-
-
0.285
Turn-On Delay Time
t
d(ON)
V
DD
= 100V, I
D
= 12A,
R
L
= 8.3
, V
GS
= 12V,
R
GS
= 7.5
-
-
20
ns
Rise Time
t
r
-
-
25
ns
Turn-Off Delay Time
t
d(OFF)
-
-
30
ns
Fall Time
t
f
-
-
15
ns
Total Gate Charge
Q
g(12)
V
GS
= 0V to 12V
V
DD
= 100V,
I
D
= 12A
-
26
28
nC
Gate Charge Source
Q
gs
-
10
12
nC
Gate Charge Drain
Q
gd
-
8
10
nC
Gate Charge at 20V
Q
g(20)
V
GS
= 0V to 20V
-
40
-
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 2V
-
3
-
nC
Plateau Voltage
V
(PLATEAU)
I
D
= 12A, V
DS
= 15V
-
7
-
V
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
1300
-
pF
Output Capacitance
C
OSS
-
230
-
pF
Reverse Transfer Capacitance
C
RSS
-
8
-
pF
Thermal Resistance Junction to Case
R
JC
-
-
3.0
o
C/W
FSGYE230R
3
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
V
SD
I
SD
= 12A
-
-
1.2
V
Reverse Recovery Time
t
rr
I
SD
= 12A, dI
SD
/dt = 100A/
s
-
-
210
ns
Reverse Recovery Charge
Q
RR
-
1.4
-
C
Electrical Specifications up to 100K RAD
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Drain to Source Breakdown Volts
(Note 3)
BV
DSS
V
GS
= 0, I
D
= 1mA
200
-
V
Gate to Source Threshold Volts
(Note 3)
V
GS(TH)
V
GS
= V
DS
, I
D
= 1mA
2.0
4.5
V
Gate to Body Leakage
(Notes 2, 3)
I
GSS
V
GS
=
30V, V
DS
= 0V
-
100
nA
Zero Gate Leakage
(Note 3)
I
DSS
V
GS
= 0, V
DS
= 160V
-
25
A
Drain to Source On-State Volts
(Notes 1, 3)
V
DS(ON)
V
GS
= 12V, I
D
= 12A
-
1.86
V
Drain to Source On Resistance
(Notes 1, 3)
r
DS(ON)12
V
GS
= 12V, I
D
= 7A
-
0.150
NOTES:
1. Pulse test, 300
s Max.
2. Absolute value.
3. In situ Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
Note 4
TEST
SYMBOL
ENVIRONMENT (NOTE 5)
APPLIED
V
GS
BIAS
(V)
(NOTE 6)
MAXIMUM
V
DS
BIAS (V)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (
)
Single Event Effects Safe Operating Area
SEESOA
Br
37
36
-20
200
I
60
32
-10
200
Au
82
28
-5
160
Au
82
28
-10
120
NOTES:
4. Testing conducted at Brookhaven National Labs.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves
Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
120
80
40
0
0
-10
-15
-20
-25
-5
V
GS
(V)
160
200
LET = 60MeV/mg/cm
2
, RANGE = 32
LET = 37MeV/mg/cm
2
, RANGE = 36
LET = 82MeV/mg/cm
2
, RANGE = 28
V
DS
(V)
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
TEMP = 25
o
C
V
DS
(V)
LET = 82 GOLD
LET = 60 IODINE
LET = 37 BROMINE
240
200
160
120
80
40
0
-30
0
-5
-10
-15
-20
-25
V
GS
(V)
-35
-40
FSGYE230R
4
FIGURE 3. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. BASIC GATE CHARGE WAVEFORM
FIGURE 7. TYPICAL NORMALIZED r
DS(ON)
vs JUNCTION
TEMPERATURE
FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS
Performance Curves
Unless Otherwise Specified (Continued)
300
100
10
LIMITING INDUCT
ANCE (HENR
Y)
DRAIN SUPPLY (V)
1000
ILM = 10A
300A
1E-4
1E-5
1E-6
30
100A
30A
1E-7
1E-3
I
D
, DRAIN (A)
T
C
, CASE TEMPERATURE (
o
C)
150
100
50
0
-50
0
10
14
12
2
4
6
8
10
1
1
0.1
10
100
1000
100
I
D
,
DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
AREA MAY BE
LIMITED BY r
DS(ON)
OPERATION IN THIS
100
s
1ms
10ms
T
C
= 25
o
C
CHARGE
Q
GD
Q
G
V
G
Q
GS
12V
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED r
DS(ON)
PULSE DURATION = 250ms, V
GS
= 12V, I
D
= 7A
10
8
6
4
2
0
200
160
120
80
40
0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN T
O
SOURCE CURRENT (A)
V
GS
= 6V
V
GS
= 8V
V
GS
= 10V
V
GS
= 12V
V
GS
= 14V
DESCENDING ORDER
FSGYE230R
5
FIGURE 9. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
FIGURE 10. UNCLAMPED INDUCTIVE SWITCHING
Performance Curves
Unless Otherwise Specified (Continued)
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
1
0.001
0.01
0.1
10
NORMALIZED THERMAL RESPONSE (Z
JC
)
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
+ T
C
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
0.01
10
1
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
10
0.1
I
AS
,
A
V
ALANCHE CURRENT (A)
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
IF R = 0
STARTING T
J
= 150
o
C
IF R
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
STARTING T
J
= 25
o
C
100
Test Circuits and Waveforms
FIGURE 11. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 12. UNCLAMPED ENERGY WAVEFORMS
t
P
V
GS
20V
L
+
-
V
DS
V
DD
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
50
50
50V-150V
I
AS
+
-
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
CURRENT
TRANSFORMER
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
FSGYE230R
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