1
TM
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Star*PowerTM is a trademark of Intersil Corporation.
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright Intersil Corporation 2000
FSPYC260R, FSPYC260F
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
Intersil Star*Power Rad Hard
MOSFETs have been specifically
developed for high performance
applications in a commercial or
military space environment. Star*Power MOSFETs offer the
system designer both extremely low r
DS(ON)
and Gate
Charge allowing the development of low loss Power
Subsystems. Star*Power FETs combine this electrical
capability with total dose radiation hardness up to 300K
RADS while maintaining the guaranteed performance for
SEE (Single Event Effects) which the Intersil FS families
have always featured.
The Intersil portfolio of Star*Power FETS includes a family of
devices in various voltage, current and package styles. The
Star*Power family consists of Star*Power and Star*Power
Gold products. Star*Power FETS are optimized for total dose
and r
DS(ON)
performance while exhibiting SEE capability at
full rated voltage up to an LET of 37. Star*Power Gold FETS
have been optimized for SEE and Gate Charge providing
SEE performance to 80% of the rated voltage for an LET of
82 with extremely low gate charge characteristics.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.
Reliability screening is available as either, TXV or Space
equivalent of MIL-S-19500.
Formerly available as type TA45211W.
Features
58A, 200V, r
DS(ON)
= 0.031
UIS Rated
Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Rated to 300K RAD (Si)
Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 100% of Rated Breakdown and
V
GS
of 10V Off-Bias
Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
AS
Photo Current
- 17nA Per-RAD (Si)/s Typically
Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm
2
- Usable to 1E14 Neutrons/cm
2
Symbol
Packaging
SMD2
Ordering Information
RAD LEVEL
SCREENING LEVEL
PART NUMBER/BRAND
10K
Engineering samples
FSPYC260D1
100K
TXV
FSPYC260R3
100K
Space
FSPYC260R4
300K
TXV
FSPYC260F3
300K
Space
FSPYC260F4
D
G
S
Data Sheet
May 2000
File Number
4850.1
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
FSPYC260R, FSPYC260F
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
200
V
Drain to Gate Voltage (R
GS
= 20k
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
200
V
Continuous Drain Current
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
58
A
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
37
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
200
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
30
V
Maximum Power Dissipation
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
208
W
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
83
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.67
W/
o
C
Single Pulsed Avalanche Current, L = 100
H, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . I
AS
110
A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
S
58
A
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
200
A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(Distance >0.063in (1.6mm) from Case, 10s Max)
300
o
C
Weight (Typical)
3.3 (Typ)
g
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 1mA, V
GS
= 0V
200
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
,
I
D
= 1mA
T
C
= -55
o
C
-
-
5.5
V
T
C
= 25
o
C
2.0
-
4.5
V
T
C
= 125
o
C
1.0
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 160V,
V
GS
= 0V
T
C
= 25
o
C
-
-
25
A
T
C
= 125
o
C
-
-
250
A
Gate to Source Leakage Current
I
GSS
V
GS
=
30V
T
C
= 25
o
C
-
-
100
nA
T
C
= 125
o
C
-
-
200
nA
Drain to Source On-State Voltage
V
DS(ON)
V
GS
= 12V, I
D
= 58A
-
-
1.91
V
Drain to Source On Resistance
r
DS(ON)12
I
D
= 37A,
V
GS
= 12V
T
C
= 25
o
C
-
0.026
0.031
T
C
= 125
o
C
-
-
0.062
Turn-On Delay Time
t
d(ON)
V
DD
= 100V, I
D
= 58A,
R
L
= 1.72
, V
GS
= 12V,
R
GS
= 2.35
-
-
35
ns
Rise Time
t
r
-
-
120
ns
Turn-Off Delay Time
t
d(OFF)
-
-
60
ns
Fall Time
t
f
-
-
15
ns
Total Gate Charge
Q
g(12)
V
GS
= 0V to 12V
V
DD
= 100V,
I
D
= 58A
-
115
140
nC
Gate Charge Source
Q
gs
-
50
60
nC
Gate Charge Drain
Q
gd
-
20
30
nC
Gate Charge at 20V
Q
g(20)
V
GS
= 0V to 20V
-
195
-
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 2V
-
12
-
nC
Plateau Voltage
V
(PLATEAU)
I
D
= 58A, V
DS
= 15V
-
7.0
-
V
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
6500
-
pF
Output Capacitance
C
OSS
-
1000
-
pF
Reverse Transfer Capacitance
C
RSS
-
30
-
pF
Thermal Resistance Junction to Case
R
JC
-
-
0.6
o
C/W
FSPYC260R, FSPYC260F
3
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
V
SD
I
SD
= 58A
-
-
1.2
V
Reverse Recovery Time
t
rr
I
SD
= 58A, dI
SD
/dt = 100A/
s
-
-
375
ns
Reverse Recovery Charge
Q
RR
4.6
C
Electrical Specifications up to 300K RAD
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
UNITS
100K RAD
300K RAD
Drain to Source Breakdown Volts
(Note 3)
BV
DSS
V
GS
= 0, I
D
= 1mA
200
-
200
V
Gate to Source Threshold Volts
(Note 3)
V
GS(TH)
V
GS
= V
DS
, I
D
= 1mA
2.0
4.5
1.5
4.5
V
Gate to Body Leakage
(Notes 2, 3)
I
GSS
V
GS
=
30V, V
DS
= 0V
-
100
100
nA
Zero Gate Leakage
(Note 3)
I
DSS
V
GS
= 0, V
DS
= 160V
-
25
50
A
Drain to Source On-State Volts
(Notes 1, 3)
V
DS(ON)
V
GS
= 12V, I
D
= 58A
-
1.91
2.26
V
Drain to Source On Resistance
(Notes 1, 3)
r
DS(ON)12
V
GS
= 12V, I
D
= 37A
-
0.031
0.035
NOTES:
1. Pulse test, 300
s Max.
2. Absolute value.
3. In situ Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
Note 4
TEST
SYMBOL
ENVIRONMENT (NOTE 5)
APPLIED
V
GS
BIAS
(V)
(NOTE 6)
MAXIMUM
V
DS
BIAS (V)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (
)
Single Event Effects Safe Operating Area
SEESOA
Br
37
36
-10
200
Br
37
36
-15
160
I
60
32
-2
200
I
60
32
-8
160
Au
82
28
0
160
Au
82
28
-5
120
NOTES:
4. Testing conducted at Brookhaven National Labs.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves
Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
120
80
40
0
0
-20
V
GS
(V)
160
LET = 60MeV/mg/cm
2
, RANGE = 32
LET = 37MeV/mg/cm
2
, RANGE = 36
LET = 82MeV/mg/cm
2
, RANGE = 28
V
DS
(V)
TEMP = 25
o
C
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
200
240
-4
-8
-12
-16
V
DS
(V)
LET = 82 GOLD
LET = 60 IODINE
LET = 37 BROMINE
240
200
160
120
80
40
0
-30
0
-5
-10
-15
-20
-25
V
GS
(V)
FSPYC260R, FSPYC260F
4
FIGURE 3. TYPICAL DRAIN INDUCTANCE REQUIRED TO
LIMIT GAMMA DOT CURRENT TO I
AS
FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. BASIC GATE CHARGE WAVEFORM
FIGURE 7. TYPICAL NORMALIZED r
DS(ON)
vs JUNCTION
TEMPERATURE
FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS
Performance Curves
Unless Otherwise Specified (Continued)
300
100
10
LIMITING INDUCT
ANCE (HENR
Y)
DRAIN SUPPLY (V)
1000
ILM = 10A
300A
1E-4
1E-5
1E-6
30
100A
30A
1E-7
1E-3
I
D
, DRAIN (A)
T
C
, CASE TEMPERATURE (
o
C)
150
100
50
0
-50
0
20
40
30
10
60
50
70
100
10
1
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
100
0.1
500
500
I
D
,
DRAIN CURRENT (A)
100
s
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
10ms
1ms
CHARGE
Q
GD
Q
G
V
G
Q
GS
12V
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
NORMALIZED r
DS(ON)
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 250ms, V
GS
= 12V, I
D
= 37A
10
8
6
4
2
0
200
160
120
80
40
0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN T
O
SOURCE CURRENT (A)
V
GS
= 8V
V
GS
= 10V
V
GS
= 12V
V
GS
= 14V
V
GS
= 6V
DESCENDING ORDER
FSPYC260R, FSPYC260F
5
FIGURE 9. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
FIGURE 10. UNCLAMPED INDUCTIVE SWITCHING
Performance Curves
Unless Otherwise Specified (Continued)
NORMALIZED THERMAL RESPONSE (Z
JC
)
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
1
0.001
0.01
0.1
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
+ T
C
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
10
300
100
10
1
0.01
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
10
I
AS
,
A
V
ALANCHE CURRENT (A)
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
IF R = 0
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
IF R
0
0.001
Test Circuits and Waveforms
FIGURE 11. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 12. UNCLAMPED ENERGY WAVEFORMS
t
P
V
GS
20V
L
+
-
V
DS
V
DD
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
50
50
50V-150V
I
AS
+
-
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
CURRENT
TRANSFORMER
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
FSPYC260R, FSPYC260F
6
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).
FIGURE 13. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 14. RESISTIVE SWITCHING WAVEFORMS
Test Circuits and Waveforms
(Continued)
V
DS
DUT
R
GS
0V
V
GS
= 12V
V
DD
R
L
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
t
ON
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent)
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
UNITS
Gate to Source Leakage Current
I
GSS
V
GS
=
30V
20 (Note 7)
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 80% Rated Value
25 (Note 7)
A
Drain to Source On Resistance
r
DS(ON)
T
C
= 25
o
C at Rated I
D
20% (Note 8)
Gate Threshold Voltage
V
GS(TH)
I
D
= 1.0mA
20% (Note 8)
V
NOTES:
7. Or 100% of Initial Reading (whichever is greater).
8. Of Initial Reading.
Screening Information
TEST
JANTXV EQUIVALENT
JANS EQUIVALENT
Unclamped Inductive Switching
V
GS(PEAK)
= 20V, L = 0.1mH; Limit = 110A
V
GS(PEAK)
= 20V, L = 0.1mH; Limit = 110A
Thermal Response
t
H
= 10ms; V
H
= 25V; I
H
= 4A; LIMIT = 55mV
t
H
= 10ms; V
H
= 25V; I
H
= 4A; LIMIT = 55mV
Gate Stress
V
GS
= 45V, t = 250
s
V
GS
= 45V, t = 250
s
Pind
Optional
Required
Pre Burn-In Tests (Note 9)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25
o
C)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25
o
C)
Steady State Gate
Bias (Gate Stress)
MIL-STD-750, Method 1042, Condition B
V
GS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 48 hours
MIL-STD-750, Method 1042, Condition B
V
GS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 48 hours
Interim Electrical Tests (Note 9)
All Delta Parameters Listed in the Delta Tests
and Limits Table
All Delta Parameters Listed in the Delta Tests
and Limits Table
Steady State Reverse
Bias (Drain Stress)
MIL-STD-750, Method 1042, Condition A
V
DS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 160 hours
MIL-STD-750, Method 1042, Condition A
V
DS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 240 hours
PDA
10%
5%
Final Electrical Tests (Note 9)
MIL-S-19500, Group A, Subgroup 2
MIL-S-19500, Group A, Subgroups 2 and 3
NOTE:
9. Test limits are identical pre and post burn-in.
Additional Tests
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
UNITS
Safe Operating Area
SOA
V
DS
= 160V, t = 10ms
1.25
A
Thermal Impedance
V
SD
t
H
= 500ms; V
H
=20V; I
H
= 4A
HEAT SINK REQUIRED
115
mV
FSPYC260R, FSPYC260F
7
Rad Hard Data Packages - Intersil Power Transistors
TXV Equivalent
1. RAD HARD TXV EQUIVALENT - STANDARD DATA
PACKAGE
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
D. Group A
- Attributes Data Sheet
E. Group B
- Attributes Data Sheet
F. Group C
- Attributes Data Sheet
G. Group D
- Attributes Data Sheet
2. RAD HARD TXV EQUIVALENT - OPTIONAL DATA
PACKAGE
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
- Pre and Post Burn-In Read and Record
Data
D. Group A
- Attributes Data Sheet
E. Group B
- Attributes Data Sheet
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating
Life Read and Record Data (Subgroup B6)
F. Group C
- Attributes Data Sheet
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
G. Group D
- Attributes Data Sheet
- Pre and Post RAD Read and Record Data
Class S - Equivalents
1. RAD HARD "S" EQUIVALENT - STANDARD DATA
PACKAGE
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
F. Group A
- Attributes Data Sheet
G. Group B
- Attributes Data Sheet
H. Group C
- Attributes Data Sheet
I. Group D
- Attributes Data Sheet
2. RAD HARD MAX. "S" EQUIVALENT - OPTIONAL
DATA PACKAGE
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
- X-Ray and X-Ray Report
F. Group A
- Attributes Data Sheet
- Subgroups A2, A3, A4, A5 and A7 Data
G. Group B
- Attributes Data Sheet
- Subgroups B1, B3, B4, B5 and B6 Data
H. Group C
- Attributes Data Sheet
- Subgroups C1, C2, C3 and C6 Data
I. Group D
- Attributes Data Sheet
- Pre and Post Radiation Data
FSPYC260R, FSPYC260F
8
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
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FSPYC260R, FSPYC260F
SMD2
3 PAD CERAMIC LEADLESS CHIP CARRIER
D
A
D
1
E
1
E
2
b
D
2
E
1
2
3
1 - GATE
2 - SOURCE
3 - DRAIN
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.130
0.142
3.30
3.60
3
b
0.135
0.145
3.43
3.68
-
D
0.520
0.530
13.20
13.46
-
D
1
0.435
0.445
11.05
11.30
-
D
2
0.115
0.125
2.92
3.17
-
E
0.685
0.695
17.40
17.65
-
E
1
0.470
0.480
11.94
12.19
-
E
2
0.152
0.162
3.86
4.11
-
NOTES:
1. No current JEDEC outline for this package.
2. Controlling dimension: INCH.
3. Measurement prior to pre-solder coating the mounting pads.
4. Revision 3 dated 5-00.
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