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Электронный компонент: FSTYC9055D1

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1
TM
File Number
4755.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
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Intersil and Design is a trademark of Intersil Corporation.
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Copyright
Intersil Corporation 2000
FSTYC9055D, FSTYC9055R
Radiation Hardened, SEGR Resistant
P-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developed a
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Immunity to Single Event Effects (SEE) is combined with
100K RADs of total dose hardness to provide devices which
are ideally suited to harsh space environments. The dose
rate and neutron tolerance necessary for military
applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
Formerly available as type TA17750T.
Features
64A, -60V, r
DS(ON)
= 0.023
Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
Typical SEE Immunity
- LET of 36MeV/mg/cm
2
with V
DS
up to 80% of Rated
Breakdown and V
GS
of 0V
- LET of 26MeV/mg/cm
2
with V
DS
up to 100% of Rated
Breakdown and V
GS
of 5V Off-Bias
Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
Photo Current
- 6nA Per-RAD (Si)/s Typically
Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm
2
- Usable to 3E14 Neutrons/cm
2
Symbol
Packaging
SMD2
Ordering Information
RAD LEVEL
SCREENING LEVEL
PART NUMBER/BRAND
10K
Commercial
FSTYC9055D1
10K
TXV
FSTYC9055D3
100K
Commercial
FSTYC9055R1
100K
TXV
FSTYC9055R3
100K
Space
FSTYC9055R4
G
D
S
Data Sheet
June 2000
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
FSTYC9055D, FSTYC9055R
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
-60
V
Drain to Gate Voltage (R
GS
= 20k
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
-60
V
Continuous Drain Current
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
64
A
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
41
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
192
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
20
V
Maximum Power Dissipation
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
162
W
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
65
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.30
W/
o
C
Single Pulsed Avalanche Current, L = 100
H, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . I
AS
192
A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
S
64
A
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
192
A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(Distance >0.063in (1.6mm) from Case, 10s Max)
300
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 1mA, V
GS
= 0V
-60
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
,
I
D
= 1mA
T
C
= -55
o
C
-
-
-7.0
V
T
C
= 25
o
C
-2.0
-
-6.0
V
T
C
= 125
o
C
-1.0
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -48V,
V
GS
= 0V
T
C
= 25
o
C
-
-
25
A
T
C
= 125
o
C
-
-
250
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V
T
C
= 25
o
C
-
-
100
nA
T
C
= 125
o
C
-
200
nA
Drain to Source On-State Voltage
V
DS(ON)
V
GS
= -12V, I
D
= 64A
-
-
-1.60
V
Drain to Source On Resistance
r
DS(ON)12
I
D
= 41A,
V
GS
= -12V
T
C
= 25
o
C
-
0.016
0.023
T
C
= 125
o
C
-
-
0.037
Turn-On Delay Time
t
d(ON)
V
DD
= -30V, I
D
= 64A,
R
L
= 0.47
, V
GS
= -12V,
R
GS
= 2.35
-
-
60
ns
Rise Time
t
r
-
-
45
ns
Turn-Off Delay Time
t
d(OFF)
-
-
90
ns
Fall Time
t
f
-
-
35
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to -20V
V
DD
= -30V,
I
D
= 64A
-
-
330
nC
Gate Charge at 12V
Q
g(12)
V
GS
= 0V to -12V
-
160
190
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to -2V
-
-
18
nC
Gate Charge Source
Q
gs
-
51
71
nC
Gate Charge Drain
Q
gd
-
31
46
nC
Plateau Voltage
V
(PLATEAU)
I
D
= 64A, V
DS
= -15V
-
-7
-
V
Input Capacitance
C
ISS
V
DS
= -25V, V
GS
= 0V,
f = 1MHz
-
7100
-
pF
Output Capacitance
C
OSS
-
2130
-
pF
Reverse Transfer Capacitance
C
RSS
-
370
-
pF
Thermal Resistance Junction to Case
R
JC
-
-
0.77
o
C/W
FSTYC9055D, FSTYC9055R
3
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
V
SD
I
SD
= 64A
-0.6
-
-1.8
V
Reverse Recovery Time
t
rr
I
SD
= 64A, dI
SD
/dt = 100A/
s
-
-
120
ns
Electrical Specifications up to 100K RAD
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Drain to Source Breakdown Volts
(Note 3)
BV
DSS
V
GS
= 0, I
D
= 1mA
-60
-
V
Gate to Source Threshold Volts
(Note 3)
V
GS(TH)
V
GS
= V
DS
, I
D
= 1mA
-2.0
-6.0
V
Gate to Body Leakage
(Notes 2, 3)
I
GSS
V
GS
=
20V, V
DS
= 0V
-
100
nA
Zero Gate Leakage
(Note 3)
I
DSS
V
GS
= 0, V
DS
= -48V
-
25
A
Drain to Source On-State Volts
(Notes 1, 3)
V
DS(ON)
V
GS
= -12V, I
D
= 64A
-
-1.60
V
Drain to Source On Resistance
(Notes 1, 3)
r
DS(ON)12
V
GS
= -12V, I
D
= 41A
-
0.023
NOTES:
1. Pulse test, 300
s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= -12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
Note 4
TEST
SYMBOL
ENVIRONMENT (NOTE 5)
APPLIED
V
GS
BIAS
(V)
(NOTE 6)
MAXIMUM
V
DS
BIAS (V)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (
)
Single Event Effects Safe Operating Area
SEESOA
Ni
26
43
20
-60
Br
37
36
10
-60
Br
37
36
15
-36
Br
37
36
20
-24
NOTES:
4. Testing conducted at Brookhaven National Labs; witnessed by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
2
(typical), T
C
= 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves
Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
-40
0
0
10
15
20
25
5
V
GS
(V)
V
DS
(V)
-10
-20
-30
-50
-60
-70
LET = 37MeV/mg/cm
2
, RANGE = 36
LET = 26MeV/mg/cm
2
, RANGE = 43
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
TEMP = 25
o
C
-300
-100
-10
LIMITING INDUCT
ANCE (HENR
Y)
DRAIN SUPPLY (V)
-1000
ILM = 10A
300A
1E-4
1E-5
1E-6
-30
100A
30A
1E-7
1E-3
FSTYC9055D, FSTYC9055R
4
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
Performance Curves
Unless Otherwise Specified (Continued)
I
D
, DRAIN (A)
T
C
, CASE TEMPERATURE (
o
C)
150
100
50
0
-50
0
20
40
30
10
70
60
50
100
10
1
-1
I
D
,
DRAIN CURRENT (A)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
-10
-100
500
100
s
1ms
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
-200
T
C
= 25
o
C
CHARGE
Q
GD
Q
G
V
G
Q
GS
-12V
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED r
DS(ON)
PULSE DURATION = 250ms, V
GS
= -12V, I
D
= 41A
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
THERMAL RESPONSE (Z
JC
)
0.001
0.01
0.1
NORMALIZED
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
+ T
C
SINGLE PULSE
0.01
0.02
0.2
0.1
0.05
0.5
10
t, RECTANGULAR PULSE DURATION (s)
FSTYC9055D, FSTYC9055R
5
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Performance Curves
Unless Otherwise Specified (Continued)
100
10
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
I
AS
,
A
V
ALANCHE CURRENT (A)
10
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
IF R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
IF R
0
500
Test Circuits and Waveforms
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
t
P
V
GS
20V
L
+
-
V
DS
V
DD
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
50
50W
50V-150V
I
AS
+
-
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
CURRENT
TRANSFORMER
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
V
DD
R
L
V
DS
DUT
R
GS
0V
V
GS
= -12V
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
t
ON
FSTYC9055D, FSTYC9055R