1
July 1998
FSYC260D,
FSYC260R
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
Features
46A, 200V, r
DS(ON)
= 0.050
Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 80% of Rated Breakdown and
V
GS
of 10V Off-Bias
Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
Photo Current
- 17nA Per-RAD(Si)/s Typically
Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm
2
- Usable to 1E14 Neutrons/cm
2
Formerly available as type TA17667.
Description
The Discrete Products Operation of Intersil has developed a
series
of
Radiation
Hardened
MOSFETs
specifically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space environ-
ments. The dose rate and neutron tolerance necessary for
military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent
of
MIL-S-19500,
or
Space
equivalent
of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
Symbol
Packaging
SMD-2
Ordering Information
RAD LEVEL
SCREENING LEVEL
PART NO./BRAND
10K
Commercial
FSYC260D1
10K
TXV
FSYC260D3
100K
Commercial
FSYC260R1
100K
TXV
FSYC260R3
100K
Space
FSYC260R4
D
G
S
File Number
4549
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise
FSYC260D, FSYC260R
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
200
V
Drain to Gate Voltage (R
GS
= 20k
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
200
V
Continuous Drain Current
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
46
A
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
29
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
138
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
V
Maximum Power Dissipation
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
208
W
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
83
W
Derated Above 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.67
W/
o
C
Single Pulsed Avalanche Current, L = 100
H, (See Test Figure) . . . . . . . . . . . . . . . . . . . I
AS
138
A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
S
46
A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
138
A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(Distance >0.063in (1.6mm) from Case, 10s Max)
300
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 1mA, V
GS
= 0V
200
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
,
I
D
= 1mA
T
C
= -55
o
C
-
-
5.0
V
T
C
= 25
o
C
1.5
-
4.0
V
T
C
= 125
o
C
0.5
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 160V,
V
GS
= 0V
T
C
= 25
o
C
-
-
25
A
T
C
= 125
o
C
-
-
250
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V
T
C
= 25
o
C
-
-
100
nA
T
C
= 125
o
C
-
-
200
nA
Drain to Source On-State Voltage
V
DS(ON)
V
GS
= 12V, I
D
= 46A
-
-
2.42
V
On Resistance
r
DS(ON)12
I
D
= 29A,
V
GS
= 12V
T
C
= 25
o
C
-
0.042
0.050
T
C
= 125
o
C
-
-
0.087
Turn-On Delay Time
t
d(ON)
V
DD
= 100V, I
D
= 46A,
R
L
= 2.17
, V
GS
= 12V,
R
GS
= 2.35
-
-
45
ns
Rise Time
t
r
-
-
160
ns
Turn-Off Delay Time
t
d(OFF)
-
-
100
ns
Fall Time
t
f
-
-
25
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 20V
V
DD
= 100V,
I
D
= 46A
-
-
270
nC
Gate Charge at 12V
Q
g(12)
V
GS
= 0V to 12V
-
160
180
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 2V
-
-
8.6
nC
Gate Charge Source
Q
gs
-
29
41
nC
Gate Charge Drain
Q
gd
-
84
94
nC
Plateau Voltage
V
(PLATEAU)
I
D
= 46A, V
DS
= 15V
-
8
-
V
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
4200
-
pF
Output Capacitance
C
OSS
-
890
-
pF
Reverse Transfer Capacitance
C
RSS
-
285
-
pF
Thermal Resistance Junction to Case
R
JC
-
-
0.6
o
C/W
FSYC260D, FSYC260R
3
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
V
SD
I
SD
= 46A
0.6
-
1.8
V
Reverse Recovery Time
t
rr
I
SD
= 46A, dI
SD
/dt = 100A/
s
-
-
690
ns
Electrical Specifications up to 100K RAD
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Drain to Source Breakdown Volts
(Note 3)
BV
DSS
V
GS
= 0, I
D
= 1mA
200
-
V
Gate to Source Threshold Volts
(Note 3)
V
GS(TH)
V
GS
= V
DS
, I
D
= 1mA
1.5
4.0
V
Gate-Body Leakage
(Notes 2, 3)
I
GSS
V
GS
=
20V, V
DS
= 0V
-
100
nA
Zero-Gate Leakage
(Note 3)
I
DSS
V
GS
= 0, V
DS
= 160V
-
25
A
Drain to Source On-State Volts
(Notes 1, 3)
V
DS(ON)
V
GS
= 12V, I
D
= 46A
-
2.42
V
Drain to Source On Resistance
(Notes 1, 3)
r
DS(ON)12
V
GS
= 12V, I
D
= 29A
-
0.050
NOTES:
1. Pulse test, 300
s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
Note 4
TEST
SYMBOL
ENVIRONMENT (NOTE 5)
APPLIED
V
GS
BIAS
(V)
(NOTE 6)
MAXIMUM
V
DS
BIAS
(V)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (
)
Single Event Effects Safe Operating
Area
SEESOA
Ni
26
43
-20
200
Br
37
36
-5
200
Br
37
36
-10
160
Br
37
36
-15
100
Br
37
36
-20
40
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
120
80
40
0
0
-10
-15
-20
-25
-5
V
GS
(V)
V
DS
(V)
160
200
TEMP = 25
o
C
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
LET = 37MeV/mg/cm
2
, RANGE = 36
LET = 26MeV/mg/cm
2
, RANGE = 43
300
100
10
LIMITING INDUCT
ANCE (HENR
Y)
DRAIN SUPPLY (V)
1000
ILM = 10A
300A
1E-4
1E-5
1E-6
30
100A
30A
1E-7
1E-3
FSYC260D, FSYC260R
4
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
Typical Performance Curves
Unless Otherwise Specified (Continued)
I
D
, DRAIN (A)
T
C
, CASE TEMPERATURE (
o
C)
150
100
50
0
-50
0
20
40
30
10
60
50
100
10
1
1
I
D
,
DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
100
T
C
= 25
o
C
100ms
10ms
1ms
500
500
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
CHARGE
Q
GD
Q
G
V
G
Q
GS
12V
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
NORMALIZED r
DS(ON)
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 250ms, V
GS
= 12V, I
D
= 29A
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
0.001
0.01
0.1
NORMALIZED
t, RECTANGULAR PULSE DURATION (s)
1
THERMAL RESPONSE (Z
JC
)
10
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
+ T
C
SINGLE PULSE
0.05
0.5
0.02
0.1
0.01
0.2
10
1
FSYC260D, FSYC260R
5
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
300
100
10
1
0.01
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
I
AS
,
A
V
ALANCHE CURRENT (A)
10
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
t
P
V
GS
20V
L
+
-
V
DS
V
DD
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
50
50
50V-150V
I
AS
+
-
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
CURRENT
TRANSFORMER
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
V
DS
DUT
R
GS
0V
V
GS
= 12V
V
DD
R
L
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
t
ON
FSYC260D, FSYC260R
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