4-1
File Number
4750
FSYE430D, FSYE430R
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developed a
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space
environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
Formerly available as type TA17639.
Features
3A, 500V, r
DS(ON)
= 2.70
Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 80% of Rated Breakdown and
V
GS
of 10V Off-Bias
Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
Photo Current
- 8nA Per-RAD(Si)/s Typically
Neutron
- Maintain Pre-RAD Specifications
for 3E12 Neutrons/cm
2
- Usable to 3E13 Neutrons/cm
2
Symbol
Packaging
SMD.5
Ordering Information
RAD LEVEL
SCREENING LEVEL
PART
NUMBER/BRAND
10K
Commercial
FSYE430D1
10K
TXV
FSYE430D3
100K
Commercial
FSYE430R1
100K
TXV
FSYE430R3
100K
Space
FSYE430R4
D
G
S
Data Sheet
June 1999
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
4-2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
FSYE430D, FSYE430R
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
500
V
Drain to Gate Voltage (R
GS
= 20k
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
500
V
Continuous Drain Current
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
3
A
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
2
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
9
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
V
Maximum Power Dissipation
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
42
W
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
17
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.33
W/
o
C
Single Pulsed Avalanche Current, L = 100
H, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . I
AS
9
A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
S
3
A
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
9
A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(Distance >0.063in (1.6mm) from Case, 10s Max)
300
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 1mA, V
GS
= 0V
500
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
,
I
D
= 1mA
T
C
= -55
o
C
-
-
5.0
V
T
C
= 25
o
C
1.5
-
4.0
V
T
C
= 125
o
C
0.5
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 400V,
V
GS
= 0V
T
C
= 25
o
C
-
-
25
A
T
C
= 125
o
C
-
-
250
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V
T
C
= 25
o
C
-
-
100
nA
T
C
= 125
o
C
-
-
200
nA
Drain to Source On-State Voltage
V
DS(ON)
V
GS
= 12V, I
D
= 3A
-
-
8.51
V
Drain to Source On Resistance
r
DS(ON)12
I
D
= 2A,
V
GS
= 12V
T
C
= 25
o
C
-
1.9
2.70
T
C
= 125
o
C
-
-
4.80
Turn-On Delay Time
t
d(ON)
V
DD
= 250V, I
D
= 3A,
R
L
= 83.3
, V
GS
= 12V,
R
GS
= 7.5
-
-
20
ns
Rise Time
t
r
-
-
20
ns
Turn-Off Delay Time
t
d(OFF)
-
-
45
ns
Fall Time
t
f
-
-
25
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 20V
V
DD
= 250V,
I
D
= 3A
-
-
51
nC
Gate Charge at 12V
Q
g(12)
V
GS
= 0V to 12V
-
30
35
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 2V
-
-
2.1
nC
Gate Charge Source
Q
gs
-
6.3
8.0
nC
Gate Charge Drain
Q
gd
-
14
19
nC
Plateau Voltage
V
(PLATEAU)
I
D
= 3A, V
DS
= 15V
-
7
-
V
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
800
-
pF
Output Capacitance
C
OSS
-
120
-
pF
Reverse Transfer Capacitance
C
RSS
-
20
-
pF
Thermal Resistance Junction to Case
R
JC
-
-
3.0
o
C/W
FSYE430D, FSYE430R
4-3
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
V
SD
I
SD
= 3A
0.6
-
1.8
V
Reverse Recovery Time
t
rr
I
SD
= 3A, dI
SD
/dt = 100A/
s
-
-
380
ns
Electrical Specifications up to 100K RAD
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Drain to Source Breakdown Volts
(Note 3)
BV
DSS
V
GS
= 0, I
D
= 1mA
500
-
V
Gate to Source Threshold Volts
(Note 3)
V
GS(TH)
V
GS
= V
DS
, I
D
= 1mA
1.5
4.0
V
Gate to Body Leakage
(Notes 2, 3)
I
GSS
V
GS
=
20V, V
DS
= 0V
-
100
nA
Zero Gate Leakage
(Note 3)
I
DSS
V
GS
= 0, V
DS
= 400V
-
25
A
Drain to Source On-State Volts
(Notes 1, 3)
V
DS(ON)
V
GS
= 12V, I
D
= 3A
-
4.80
V
Drain to Source On Resistance
(Notes 1, 3)
r
DS(ON)12
V
GS
= 12V, I
D
= 2A
-
2.70
NOTES:
1. Pulse test, 300
s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
Note 4
TEST
SYMBOL
ENVIRONMENT (NOTE 5)
APPLIED
V
GS
BIAS
(V)
(NOTE 6)
MAXIMUM
V
DS
BIAS (V)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (
)
Single Event Effects Safe Operating Area
SEESOA
Ni
26
43
-15
500
Ni
26
43
-20
450
Br
37
36
-5
500
Br
37
36
-10
400
Br
37
36
-15
100
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
0
0
-10
-15
-20
-25
-5
V
GS
(V)
V
DS
(V)
LET = 37MeV/mg/cm
2
, RANGE = 36
300
200
100
LET = 26MeV/mg/cm
2
, RANGE = 43
400
500
600
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
TEMP = 25
o
C
300
100
10
LIMITING INDUCT
ANCE (HENR
Y)
DRAIN SUPPLY (V)
1000
ILM = 10A
300A
1E-4
1E-5
1E-6
30
100A
30A
1E-7
1E-3
FSYE430D, FSYE430R
4-4
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
Typical Performance Curves
Unless Otherwise Specified (Continued)
I
D
, DRAIN (A)
T
C
, CASE TEMPERATURE (
o
C)
150
100
50
0
-50
0
2.0
1.0
3.0
4.0
10
1
1
0.1
I
D
,
DRAIN CURRENT (A)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
10
0.01
1000
30
100
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
100
s
1ms
T
C
= 25
o
C
10ms
CHARGE
Q
GD
Q
G
V
G
Q
GS
12V
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED r
DS(ON)
PULSE DURATION = 250ms,V
GS
= 12V, I
D
= 2A
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
0.001
0.01
0.1
NORMALIZED
t, RECTANGULAR PULSE DURATION (s)
1
THERMAL RESPONSE (Z
JC
)
10
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
+ T
C
SINGLE PULSE
0.5
0.02
0.1
0.01
0.2
10
1
0.05
FSYE430D, FSYE430R
4-5
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
10
1
0.01
0.1
1
10
I
AS
,
A
V
ALANCHE CURRENT (A)
0.1
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
IF R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
IF R
0
t
AV
= (L/R) ln [(I
AS
*R) /
t
AV
, TIME IN AVALANCHE (ms)
(1.3 RATED BV
DSS
- V
DD
) + 1]
t
P
V
GS
20V
L
+
-
V
DS
V
DD
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
50
50
50V-150V
I
AS
+
-
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
CURRENT
TRANSFORMER
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
V
DS
DUT
R
GS
0V
V
GS
= 12V
V
DD
R
L
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
t
ON
FSYE430D, FSYE430R
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