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Электронный компонент: G20N120

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1
HGTG20N120C3D
45A, 1200V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG20N120C3D is a MOS gated high voltage
switching device combining the best features of MOSFETs
and bipolar transistors. This device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
o
C and 150
o
C.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
The diode used in anti-parallel with the IGBT was formerly
developmental type TA49155.
The IGBT diode combination was formerly developmental
type TA49264.
Features
45A, 1200V, T
C
= 25
o
C
1200V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . . . 300ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Symbol
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG20N120C3D
TO-247
20N120C3D
NOTE: When ordering, use the entire part number.
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY
ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,598,461
4,605,948
4,618,872
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
C
E
G
G
C
E
Data Sheet
October 1998
File Number
4508.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG20N120C3D
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
1200
V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
45
A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C110
20
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
160
A
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
30
V
Switching Safe Operating Area at T
J
= 150
o
C, Figure 2 . . . . . . . . . . . . . . . . . . . . . SSOA
20A at 1200V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
208
W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.67
W/
o
C
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
ARV
100
mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
-40 to 150
o
C
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
260
o
C
Short Circuit Withstand Time (Note 2) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
8
s
Short Circuit Withstand Time (Note 2) at V
GE
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
15
s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 720V, T
J
= 125
o
C, R
GE
= 3
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
A, V
GE
= 0V
1200
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
-
-
150
A
T
C
= 150
o
C
-
-
2.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C110
,
V
GE
= 15V
T
C
= 25
o
C
-
2.4
3.0
V
T
C
= 150
o
C
-
2.2
2.9
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
A, V
CE
= V
GE
5.0
7.0
7.5
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
20V
-
-
250
nA
Switching SOA
SSOA
T
J
= 150
o
C,
R
G
= 3
,
V
GE
= 15V
L = 100
H,
V
CE (PK)
= 960V
60
-
-
A
V
CE (PK)
= 1200V
20
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= I
C110
, V
CE
= 0.5 BV
CES
-
9.4
-
V
On-State Gate Charge
Q
G(ON)
I
C
= I
C110
,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
93
130
nC
V
GE
= 20V
-
186
230
nC
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C
I
CE
= I
C110
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 3
L = 1mH
Test Circuit - (Figure 19)
-
39
-
ns
Current Rise Time
t
rI
-
22
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
110
-
ns
Current Fall Time
t
fI
-
95
-
ns
Turn-On Energy (Note 4)
E
ON1
-
950
-
J
Turn-On Energy (Note 4)
E
ON2
-
2250
-
J
Turn-Off Energy (Note 3)
E
OFF
-
1200
2400
J
HGTG20N120C3D
3
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 150
o
C
I
CE
= I
C110
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 3
L = 1mH
Test Circuit - (Figure 19)
-
39
-
ns
Current Rise Time
t
rI
-
20
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
360
550
ns
Current Fall Time
t
fI
-
300
400
ns
Turn-On Energy (Note 4)
E
ON1
-
950
-
J
Turn-On Energy (Note 4)
E
ON2
-
3365
-
J
Turn-Off Energy (Note 3)
E
OFF
-
4400
8000
J
Diode Forward Voltage
V
EC
I
EC
= 20A
-
2.6
3.4
V
Diode Reverse Recovery Time
t
rr
I
EC
= 1A, dI
EC
/dt = 200A/
s
-
-
50
ns
I
EC
= 20A, dI
EC
/dt = 200A/
s
-
-
70
ns
Thermal Resistance
Junction To Case
R
JC
IGBT
-
-
0.6
o
C/W
Diode
-
-
1.25
o
C/W
NOTES:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is
the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 19.
Typical Performance Curves
(Unless Otherwise Specified)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
CE
, DC COLLECT
OR CURRENT (A)
50
10
0
40
20
30
35
5
V
GE
= 15V
25
75
100
125
150
25
15
45
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
40
1400
30
0
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
10
20
600
800
400
200
1000
1200
0
50
60
70
T
J
= 150
o
C, R
G
= 3
, V
GE
= 15V, L = 100
H
HGTG20N120C3D
4
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
(Unless Otherwise Specified) (Continued)
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
R
JC
= 0.6
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
T
C
V
GE
110
o
C
12V
15V
15V
75
o
C
110
o
C
75
o
C
12V
T
J
= 150
o
C, R
G
= 3
, L = 1mH, V
CE
= 960V
f
MAX
, OPERA
TING FREQ
UENCY (kHz)
5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
1
10
60
20
60
10
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
SC
, PEAK SHOR
T CIRCUIT CURRENT (A)
t
SC
, SHOR
T CIRCUIT WITHST
AND TIME (
s)
11
12
13
14
15
16
5
10
15
20
30
25
100
150
200
250
300
350
t
SC
I
SC
35
400
V
CE
= 720V, R
GE
= 3
, T
J
= 125
o
C
0
2
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
10
20
30
6
8
10
60
50
40
70
PULSE DURATION = 250
s
DUTY CYCLE <0.5%, V
GE
= 12V
T
C
= -40
o
C
T
C
= 25
o
C
T
C
= 150
o
C
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
100
125
150
175
0
2
4
0
75
6
8
10
50
25
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250
s
T
C
= -40
o
C
T
C
= 150
o
C
T
C
= 25
o
C
12
14
200
E
ON2
, TURN-ON ENERGY LOSS (mJ)
12.5
7.5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10.0
5.0
2.5
20
10
30
25
15
5
15.0
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
R
G
= 3
, L = 1mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
35
40
45
17.5
20.0
0
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OFF
, TURN-OFF ENERGY LOSS (mJ)
0
25
15
10
20
30
5
2
6
R
G
= 3
, L = 1mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 12V OR 15V
T
J
= 25
o
C, V
GE
= 12V OR 15V
4
8
10
12
40
35
45
HGTG20N120C3D
5
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves
(Unless Otherwise Specified) (Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
dI
,
TURN-ON DELA
Y TIME
(ns)
10
5
15
25
30
35
40
45
50
20
55
30
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
R
G
= 3
, L = 1mH, V
CE
= 960V
40
35
45
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
,
RISE TIME
(ns)
10
0
50
250
200
100
30
5
150
25
20
15
R
G
= 3
, L = 1mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
45
40
35
300
10
15
30
5
200
250
25
20
50
150
100
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(OFF)I
, TURN-OFF DELA
Y TIME
(ns)
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 3
, L = 1mH, V
CE
= 960V
45
40
35
450
300
400
350
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
, F
ALL TIME
(ns)
10
15
30
5
50
200
250
25
20
100
150
T
J
= 25
o
C, V
GE
= 12V AND 15V
R
G
= 3
, L = 1mH, V
CE
= 960V
300
350
45
40
35
T
J
= 150
o
C, V
GE
= 12V AND 15V
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
25
50
75
13
7
8
9
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
100
125
150
14
15
175
PULSE DURATION = 250
s
DUTY CYCLE <0.5%, V
CE
= 10V
T
C
= -40
o
C
T
C
= 150
o
C
T
C
= 25
o
C
V
GE
, GA
TE T
O
EMITTER V
O
L
T
A
GE (V)
Q
G
, GATE CHARGE (nC)
12
6
50
15
3
9
0
0
150
100
V
CE
= 800V
V
CE
= 400V
V
CE
= 1200V
25
75
175
125
I
G (REF)
= 1mA, R
L
= 30
, T
C
= 25
o
C
HGTG20N120C3D