109
TM
HA-5102/883
Dual, Low Noise, High Performance
Operational Amplifier
Description
Low noise and high performance are key words describing
the unity gain stable HA-5102/883. This general purpose
dual amplifier offers an array of dynamic specifications
including 1V/
s slew rate (min), A
VCL
1, and 8MHz band-
width (typ). Complementing these outstanding parameters is
a very low noise specification of 4.3nV/
Hz at 1kHz (typ),
6nV/
Hz (max).
Fabricated using the Intersil standard high frequency D.I.
process, these operational amplifiers also offer excellent
input specifications such as 2.5mV (max) offset voltage and
75nA (max) offset current. Complementing these specifica-
tions are 100dB (min) open loop gain and 60dB channel sep-
aration (min). Economically, the HA-5102/883 also
consumes a very moderate amount of supply power
180mW/ package.
This impressive combination of features make this amplifier
ideally suited for designs ranging from audio amplifiers and
active filters to the most demanding signal conditioning and
instrumentation circuits.
Ordering Information
PART
NUMBER
TEMPERATURE
RANGE
PACKAGE
HA2-5102/883
-55
o
C to +125
o
C
8 Pin Can
HA4-5102/883
-55
o
C to +125
o
C
20 Lead Ceramic LCC
HA7-5102/883
-55
o
C to +125
o
C
8 Lead CerDIP
Features
This Circuit is Processed in Accordance to MIL-STD-
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
Low Input Noise Voltage Density at 1kHz . 6nV/
Hz (Max)
4.3nV/
Hz (Typ)
High Slew Rate . . . . . . . . . . . . . . . . . . . . . . . .1V/
s (Min)
3V/
s (Typ)
Unity Gain Bandwidth . . . . . . . . . . . . . . . . . 8MHz (Typ)
High Open Loop Gain (Full Temp) . . . . . 100kV/V (Min)
250kV/V (Typ)
High CMRR, PSRR (Full Temp). . . . . . . . . . . 86dB (Min)
100dB
(Typ)
Low Offset Voltage Drift . . . . . . . . . . . . . . 3
V/
o
C (Typ)
No Crossover Distortion
Standard Dual Pinout
Applications
High Quality Audio Preamplifiers
High Q Active Filters
Low Noise Function Generators
Low Distortion Oscillators
Low Noise Comparators
July 1994
Spec Number
511019-883
FN3709
Pinouts
HA-5102/883
(CERDIP)
TOP VIEW
HA-5102/883
(CLCC)
TOP VIEW
HA-5102/883
(METAL CAN)
TOP VIEW
OUT1
-IN1
+IN1
V-
2
3
4
1
V+
OUT2
-IN2
+IN2
7
6
5
8
1
2
-
-
+
+
1
2
3
19
20
9 10 11 12 13
OUT2
NC
NC
+IN2
-IN2
V-
NC
NC
NC
NC
14
15
16
17
18
4
5
6
7
8
+IN1
-IN1
NC
NC
NC
OU
T
1
V+
NC
NC
NC
1
2
+
-
-
+
V+
V -
2
4
6
OUT1 1
3
OUT2
7
5
8
-IN1
+IN1
+IN2
-IN2
1
2
+
+
-
-
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Intersil (and design) is a trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2002. All Rights Reserved
110
Specifications HA-5102/883
Absolute Maximum Ratings
Thermal Information
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . 40V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Voltage at Either Input Terminal. . . . . . . . . . . . . . . . . . . . . . V+ to V-
Peak Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Indefinite
(One Amplifier Shorted to Ground)
Junction Temperature (T
J
) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
Storage Temperature Range . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300
o
C
Thermal Resistance
JA
JC
CerDIP Package . . . . . . . . . . . . . . . . . . .
115
o
C/W
28
o
C/W
Ceramic LCC Package . . . . . . . . . . . . . .
65
o
C/W
15
o
C/W
Metal Can Package . . . . . . . . . . . . . . . . .
155
o
C/W
67
o
C/W
Package Power Dissipation Limit at +75
o
C for T
J
+175
o
C
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 870mW
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54W
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 645mW
Package Power Dissipation Derating Factor Above +75
o
C
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.7mW/
o
C
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . 15.4mW/
o
C
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5mW/
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Temperature Range. . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Operating Supply Voltage
. . . . . . . . . . . . . . . . . . . . . . . . . . 5V to 15V
V
INCM
1/2 (V+ - V-)
R
L
2k
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
15V, R
SOURCE
= 100
, R
LOAD
= 500k
, V
OUT
= 0V, Unless Otherwise Specified.
PARAMETERS
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Input Offset Voltage
V
IO
V
CM
= 0V
1
+25
o
C
-2.0
2.0
mV
2, 3
+125
o
C, -55
o
C
-2.5
2.5
mV
Input Bias Current
+I
B
V
CM
= 0V,
+R
S
= 10k
,
-R
S
= 100
1
+25
o
C
-200
200
nA
2, 3
+125
o
C, -55
o
C
-325
325
nA
-I
B
V
CM
= 0V,
+R
S
= 100
,
-R
S
= 10k
1
+25
o
C
-200
200
nA
2, 3
+125
o
C, -55
o
C
-325
325
nA
Input Offset Current
I
IO
V
CM
= 0V,
+R
S
= 10k
,
-R
S
= 10k
1
+25
o
C
-75
75
nA
2, 3
+125
o
C, -55
o
C
-125
125
nA
Common Mode Range
+CMR
V+ = +3V, V- = -27V
1
+25
o
C
+12
-
V
2, 3
+125
o
C, -55
o
C
+12
-
V
-CMR
V+ = +27V, V- = -3V
1
+25
o
C
-
-12
V
2, 3
+125
o
C, -55
o
C
-
-12
V
Large Signal Voltage
Gain
+A
VOL
V
OUT
= 0V and +10V,
R
L
= 2k
4
+25
o
C
100
-
kV/V
5, 6
+125
o
C, -55
o
C
100
-
kV/V
-A
VOL
V
OUT
= 0V and -10V,
R
L
= 2k
4
+25
o
C
100
-
kV/V
5, 6
+125
o
C, -55
o
C
100
-
kV/V
Common Mode
Rejection Ratio
+CMRR
V
CM
= +5V,
V+ = +10V, V- = -20V,
V
OUT
= -5V
1
+25
o
C
86
-
dB
2, 3
+125
o
C, -55
o
C
86
-
dB
-CMRR
V
CM
= -5V,
V+ = +20V, V- = -10V,
V
OUT
= +5V
1
+25
o
C
86
-
dB
2, 3
+125
o
C, -55
o
C
86
-
dB
Spec Number
511019-883
111
Spec Number
511019-883
Specifications HA-5102/883
Output Voltage Swing
+V
OUT1
R
L
= 2k
1
+25
o
C
10
-
V
2, 3
+125
o
C, -55
o
C
10
-
V
-V
OUT1
R
L
= 2k
1
+25
o
C
-
-10
V
2, 3
+125
o
C, -55
o
C
-
-10
V
+V
OUT2
R
L
= 10k
1
+25
o
C
12
-
V
2, 3
+125
o
C, -55
o
C
12
-
V
-V
OUT2
R
L
= 10k
1
+25
o
C
-
-12
V
2, 3
+125
o
C, -55
o
C
-
-12
V
Output Current
+I
OUT
V
OUT
= -5V
1
+25
o
C
10
-
mA
2, 3
+125
o
C, -55
o
C
10
-
mA
-I
OUT
V
OUT
= +5V
1
+25
o
C
-
-10
mA
2, 3
+125
o
C, -55
o
C
-
-10
mA
Quiescent Power Supply
Current
+I
CC
V
OUT
= 0V, I
OUT
= 0mA
1
+25
o
C
-
5.0
mA
2, 3
+125
o
C, -55
o
C
-
6.0
mA
-I
CC
V
OUT
= 0V, I
OUT
= 0mA
1
+25
o
C
-5.0
-
mA
2, 3
+125
o
C, -55
o
C
-6.0
-
mA
Power Supply
Rejection Ratio
+PSRR
V
SUP
= 10V,
V+ = +10V, V- = -15V
V+ = +20V, V- = -15V
1
+25
o
C
86
-
dB
2, 3
+125
o
C, -55
o
C
86
-
dB
-PSRR
V
SUP
= 10V,
V+ = +15V, V- = -10V
V+ = +15V, V- = -20V
1
+25
o
C
86
-
dB
2, 3
+125
o
C, -55
o
C
86
-
dB
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
15V, R
SOURCE
= 50
, R
LOAD
= 2k
, C
LOAD
= 50pF, A
VCL
= +1V/V, Unless Otherwise Specified.
PARAMETERS
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Slew Rate
+SR
V
OUT
= -3V to +3V
4
+25
o
C
1
-
V/
s
-SR
V
OUT
= +3V to -3V
4
+25
o
C
1
-
V/
s
Rise and Fall Time
T
R
V
OUT
= 0 to +200mV
10%
T
R
90%
4
+25
o
C
-
200
ns
T
F
V
OUT
= 0 to -200mV
10%
T
F
90%
4
+25
o
C
-
200
ns
Overshoot
+OS
V
OUT
= 0 to +200mV
4
+25
o
C
-
35
%
-OS
V
OUT
= 0 to -200mV
4
+25
o
C
-
35
%
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: V
SUPPLY
=
15V, R
SOURCE
= 100
, R
LOAD
= 500k
, V
OUT
= 0V, Unless Otherwise Specified.
PARAMETERS
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
112
Spec Number
511019-883
Specifications HA-5102/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: V
SUPPLY
=
15V, R
LOAD
= 2k
, C
LOAD
= 50pF, A
VCL
= 1V/V, Unless Otherwise Specified.
PARAMETERS
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Differential Input
Resistance
R
IN
V
CM
= 0V
1
+25
o
C
250
-
k
Input Noise Voltage
Density
E
N
R
S
= 20
,
f
O
= 1000Hz
1
+25
o
C
-
6
nV
/Hz
Input Noise Current
Density
I
N
R
S
= 2M
,
f
O
= 1000Hz
1
+25
o
C
-
3
pA
/Hz
Full Power
Bandwidth
FPBW
V
PEAK
= 10V
1, 2
+25
o
C
16
-
kHz
Minimum Closed Loop
Stable Gain
CLSG
R
L
= 2k
, C
L
= 50pF
1
-55
o
C to +125
o
C
+1
-
V/V
Output Resistance
R
OUT
Open Loop
1
+25
o
C
-
360
Quiescent Power
Consumption
PC
V
OUT
= 0V, I
OUT
=
0mA
1, 3
-55
o
C to +125
o
C
-
180
mW
Channel Separation
CS
R
S
= 1k
,
A
VCL
= 100V/V,
V
IN
= 100mV
PEAK
at
10kHz Referred to
Input
1
+25
o
C
60
-
dB
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These pa-
rameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characteriza-
tion based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2
V
PEAK
).
3. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.).
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
SUBGROUPS (SEE TABLES 1 AND 2)
Interim Electrical Parameters (Pre Burn-In)
1
Final Electrical Test Parameters
1 (Note 1), 2, 3, 4, 5, 6
Group A Test Requirements
1, 2, 3, 4, 5, 6
Groups C and D Endpoints
1
NOTE:
1. PDA applies to Subgroup 1 only.
113
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation's quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
HA-5102/883
Die Characteristics
DIE DIMENSIONS:
98.4 x 67.3 x 19 mils
1 mils
2500 x 1710 x 483
m 25.4m
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16k
2k
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12k
2k
Nitride Thickness: 3.5k
1.5k
WORST CASE CURRENT DENSITY:
1.43 x 10
5
A/cm
2
at 10mA
SUBSTRATE POTENTIAL (Powered Up):
Unbiased
TRANSISTOR COUNT: 93
PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5102/883
+IN2
-IN2
OUT2
V+
V-
+IN1
-IN1
OUT1
Spec Number
511019-883
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