1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Intersil and Design is a trademark of Intersil Americas Inc.
|
Copyright Intersil Americas Inc. 2001
HA-5134/883
Precision Quad Operational Amplifier
Description
The HA-5134/883 is a precision quad operational amplifier that
is pin compatible with the OP-400, LT1014, OP11, RM4156,
and LM148 as well as the HA-4741/883. Each amplifier fea-
tures guaranteed maximum values for offset voltage of 350
V,
offset voltage drift of 2
V/
o
C (max), and offset current of 75nA
over the full military temperature range while CMRR/PSRR is
guaranteed greater than 94dB and open loop gain is guaran-
teed above 500kV/V from -55
o
C to +125
o
C. Room temperature
specifications exceed these values such as an offset voltage
matching specification between channels of 200
V (max) at
+25
o
C.
Precision performance of the HA-5134/883 is enhanced by a
noise voltage density of 7nV/
Hz at 1kHz (typ), noise current
density of 2pA/
Hz at 1kHz and channel separation of 120dB
(min). Each of the four unity gain stable amps on the quad are
electrically isolated, having only supply lines in common and
are fabricated using Dielectric Isolation to insure quality perfor-
mance in the most demanding applications.
The HA-5134/883 is ideal for compact circuits such as instru-
mentation amplifiers, state-variable filters, and low level trans-
ducer amplifiers. Other applications include precision data
acquisition systems, precision integrators, and accurate thresh-
old detectors in designs where board space is a limitation.
Part Number Information
PART
NUMBER
TEMPERATURE
RANGE
PACKAGE
HA1-5134/883
-55
o
C to +125
o
C
14 Lead CerDIP
HA4-5134/883
-55
o
C to +125
o
C
20 Lead Ceramic LCC
Features
This Circuit is Processed in Accordance to MIL-STD-
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
Low Offset Voltage (+25
o
C). . . . . . . . . . . . .200
V (Max)
(Full Temp.) . . . . . . . . . . . .350
V (Max)
Low Offset Voltage Drift at Temp. . . . . . . . 2
V/
o
C (Max)
Offset Voltage Match . . . . . . . . . . . . . . . . . .350
V (Max)
High Channel Separation . . . . . . . . . . . . . . 120dB (Min)
Low Noise (f
100Hz) . . . . . . . . . . . . . . 10nV/
Hz (Max)
Wide Bandwidth . . . . . . . . . . . . . . . . . . . . . . .4MHz (Typ)
High CMRR/PSRR . . . . . . . . . . . . . . . . . . . . 100dB (Min)
High Voltage Gain . . . . . . . . . . . . . . . . . . 800kV/V (Min)
Dielectric Isolation
Applications
Instrumentation Amplifiers
State-Variable Filters
Precision Integrators
Threshold Detectors
Precision Data Acquisition Systems
Low-Level Transducer Amplifiers
July 2001
Spec Number
511033-883
File Number
3713.1
Pinouts
HA-5134/883
(CERDIP)
TOP VIEW
HA-5134/883
(CLCC)
TOP VIEW
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V-
OUT3
OUT4
V+
1
+
4
+
2
+
3
+
OUT1
-IN1
OUT2
+IN1
+IN2
-IN2
-IN4
+IN4
+IN3
-IN3
-
-
-
-
4
5
6
7
8
9
10
11
12 13
3
2
1
20 19
15
14
18
17
16
4
+
3
+
2
+
1
+
OU
T
1
NC
OU
T
4
NC
V-
NC
NC
V+
NC
OU
T
2
NC
OU
T
3
+IN1
-I
N
1
+IN2
-I
N
2
+IN3
+IN4
-I
N
3
-I
N
4
-
-
-
-
OBSO
LETE
PROD
UCT
POSS
IBLE
SUBS
TITUT
E PRO
DUCT
HA-51
04/88
3 or 5
962-88
50201
2
Specifications HA-5134/883
Absolute Maximum Ratings
Thermal Information
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 40V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to V-
Input Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA
Output Current . . . . . . . . . . . . . . . . . . . .Full Short Circuit Protection
Output Current Duration . . . . . . . . . . . . . . . . . . . . . . . . . . . Indefinite
(One Amplifier Shorted to Ground)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
Storage Temperature Range . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300
o
C
Thermal Resistance
JA
JC
CerDIP Package . . . . . . . . . . . . . . . . . . .
75
o
C/W
20
o
C/W
Ceramic LCC Package . . . . . . . . . . . . . .
65
o
C/W
15
o
C/W
Package Power Dissipation Limit at +75
o
C for T
J
+175
o
C
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33W
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54W
Package Power Dissipation Derating Factor Above +75
o
C
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.3mW/
o
C
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . 15.4mW/
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Temperature Range . . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Operating Supply Voltage
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15V
V
INCM
1/2 (V+ - V-)
R
L
2k
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
15V, R
SOURCE
= 5
0
, R
LOAD
= 100k
, V
OUT
= 0V, Unless Otherwise Specified.
PARAMETERS
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Input Offset Voltage
V
IO
V
CM
= 0V
1
+25
o
C
-200
200
V
2, 3
+125
o
C, -55
o
C
-350
350
V
Offset Voltage Match
V
IO
V
IO
(Max) -V
IO
(Min)
1
+25
o
C
-
200
V
2, 3
+125
o
C, -55
o
C
-
350
V
Input Bias Current
+I
B
V
CM
= 0V,
+R
S
= 10k
,
-R
S
= 5
0
1
+25
o
C
-50
50
nA
2, 3
+125
o
C, -55
o
C
-75
75
nA
-I
B
V
CM
= 0V,
+R
S
= 5
0
,
-R
S
= 10k
1
+25
o
C
-50
50
nA
2, 3
+125
o
C, -55
o
C
-75
75
nA
Input Offset Current
I
IO
V
CM
= 0V,
+R
S
= 10k
,
-R
S
= 10k
1
+25
o
C
-50
50
nA
2, 3
+125
o
C, -55
o
C
-75
75
nA
Common Mode
Range
+CMR
V+ = +5V, V- = -25V
1
+25
o
C
10
-
V
2, 3
+125
o
C, -55
o
C
10
-
V
-CMR
V+ = +25V, V- = -5V
1
+25
o
C
-
-10
V
2, 3
+125
o
C, -55
o
C
-
-10
V
Large Signal Voltage
Gain
+A
VOL
V
OUT
= 0V and +10V,
R
L
= 2k
4
+25
o
C
800
-
kV/V
5, 6
+125
o
C, -55
o
C
500
-
kV/V
-A
VOL
V
OUT
= 0V and -10V,
R
L
= 2k
4
+25
o
C
800
-
kV/V
5, 6
+125
o
C, -55
o
C
500
-
kV/V
Common Mode
Rejection Ratio
+CMRR
V
CM
= 10V,
V+ = +5V, V- = -25V,
V
OUT
= -10V
1
+25
o
C
100
-
dB
2, 3
+125
o
C, -55
o
C
94
-
dB
-CMRR
V
CM
= 10V,
V+ = +25V, V- = -5V,
V
OUT
= +10V
1
+25
o
C
100
-
dB
2, 3
+125
o
C, -55
o
C
94
-
dB
Output Voltage
Swing
+V
OUT1
R
L
= 2k
4
+25
o
C
12
-
V
5, 6
+125
o
C, -55
o
C
12
-
V
-V
OUT1
R
L
= 2k
4
+25
o
C
-
-12
V
5, 6
+125
o
C, -55
o
C
-
-12
V
Spec Number
511033-883
3
Spec Number
511033-883
Specifications HA-5134/883
Output Current
+I
OUT
V
OUT
= -10V
4
+25
o
C
15
-
mA
5, 6
+125
o
C, -55
o
C
8
-
mA
-I
OUT
V
OUT
= +10V
4
+25
o
C
-
-15
mA
5, 6
+125
o
C, -55
o
C
-
-8
mA
Quiescent Power
Supply Current
+I
CC
V
OUT
= 0V, I
OUT
=
0mA
1
+25
o
C
-
6.8
mA
2, 3
+125
o
C, -55
o
C
-
8
mA
-I
CC
V
OUT
= 0V, I
OUT
=
0mA
1
+25
o
C
-
6.8
mA
2, 3
+125
o
C, -55
o
C
-
8
mA
Power Supply
Rejection Ratio
+PSRR
V
SUP
= 10V,
V+ = +20V, V- = -15V
V+ = +10V, V- = -15V
1
+25
o
C
100
-
dB
2, 3
+125
o
C, -55
o
C
94
-
dB
-PSRR
V
SUP
= 10V,
V+ = +15V, V- = -20V
V+ = +15V, V- = -10V
1
+25
o
C
100
-
dB
2, 3
+125
o
C, -55
o
C
94
-
dB
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
15V, R
SOURCE
= 50
, R
LOAD
= 2k
, C
LOAD
= 50pF, A
VCL
= +1V/V, Unless Otherwise Specified.
PARAMETERS
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Slew Rate
+SR
V
OUT
= -3V to +3V
7
+25
o
C
0.75
-
V/
s
-SR
V
OUT
= +3V to -3V
7
+25
o
C
0.75
-
V/
s
Rise and Fall Time
t
R
V
OUT
= 0 to +200mV
10%
T
R
90%
7
+25
o
C
-
400
ns
t
F
V
OUT
= 0 to -200mV
10%
T
F
90%
7
+25
o
C
-
400
ns
Overshoot
+OS
V
OUT
= 0 to +200mV
7
+25
o
C
-
40
%
-OS
V
OUT
= 0 to -200mV
7
+25
o
C
-
40
%
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: V
SUPPLY
=
15V, R
LOAD
= 2k
, C
LOAD
= 50pF, Unless Otherwise Specified.
PARAMETERS
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Average Offset Voltage
Drift
V
IO
TC
V
CM
= 0V
1
-55
o
C to +125
o
C
-
2
V/
o
C
Differential Input
Resistance
R
IN
V
CM
= 0V
1
+25
o
C
20
-
M
Low Frequency
Peak-to-Peak Noise
E
NP-P
0.1Hz to 10Hz
1
+25
o
C
-
0.25
V
P-P
Input Noise Voltage
Density
E
N
R
S
= 20
, f
O
= 1kHz
1
+25
o
C
-
10
nV
/
Hz
Input Noise Current
Density
I
N
R
S
= 2M
, f
O
= 1kHz
1
+25
o
C
-
2
pA
/
Hz
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: V
SUPPLY
=
15V, R
SOURCE
= 5
0
, R
LOAD
= 100k
, V
OUT
= 0V, Unless Otherwise Specified.
PARAMETERS
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
4
Spec Number
511033-883
Specifications HA-5134/883
Gain Bandwidth Product
GBWP
V
O
= 200mV,
f
O
100kHz
1
+25
o
C
3
-
MHz
Unity Bandwidth Product
UBWP
V
O
= 200mV
1
+25
o
C
3
-
MHz
Slew Rate
+SR
V
OUT
= -3V to +3V
1
+25
o
C to +125
o
C
0.75
-
V/
s
-SR
V
OUT
= +3V to -3V
1
-55
o
C
0.6
-
V/
s
Full Power Bandwidth
FPBW
V
PEAK
= 10V
1, 2
+25
o
C
12
-
kHz
Minimum Closed Loop
Stable Gain
CLSG
R
L
= 2k
, C
L
= 50pF
1
-55
o
C to +125
o
C
+1
-
V/V
Rise and Fall Time
t
R
V
OUT
= 0V to +200mV
1, 4
-55
o
C to +125
o
C
-
400
ns
t
F
V
OUT
= 0V to -200mV
1, 4
-55
o
C to +125
o
C
-
400
ns
Overshoot
+OS
V
OUT
= 0V to +200mV
1
-55
o
C to +125
o
C
-
40
%
-OS
V
OUT
= 0V to -200mV
1
-55
o
C to +125
o
C
-
40
%
Output Resistance
R
OUT
Open Loop
1
+25
o
C
-
86
Power Consumption
PC
V
OUT
= 0V, I
OUT
=
0mA
1, 3
-55
o
C to +125
o
C
-
240
mW
Channel Separation (AC)
CS (AC)
V
IN
= 1V
P-P
,
f
O
=
100Hz
1
+25
o
C
120
-
dB
V
IN
= 1V
P-P
,
f
O
=
10kHz
1
+25
o
C
120
-
dB
Channel Separation (DC)
CS (DC)
V
O
=
10V (20V
P-P
),
V
IO
20
V
1
+25
o
C
120
-
dB
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-
eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2
V
PEAK
).
3. Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.).
4. Measured between 10% and 90% points.
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
SUBGROUPS (SEE TABLES 1 AND 2)
Interim Electrical Parameters (Pre Burn-In)
1
Final Electrical Test Parameters
1 (Note 1), 2, 3, 4, 5, 6, 7
Group A Test Requirements
1, 2, 3, 4, 5, 6, 7
Groups C and D Endpoints
1
NOTE:
1. PDA applies to Subgroup 1 only.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Characterized at: V
SUPPLY
=
15V, R
LOAD
= 2k
, C
LOAD
= 50pF, Unless Otherwise Specified.
PARAMETERS
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
5
All Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation's quality certifications can be viewed at website www.intersil.com/design/quality/iso.asp.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.
Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reli-
able. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
HA-5134/883
Die Characteristics
DIE DIMENSIONS:
91 x 114 x 19 mils
1 mils
2300 x 2900 x 483
m
25.4
m
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16k
2k
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SIO2, 5% Phos.)
Silox Thickness: 12k
2k
Nitride Thickness: 3.5k
1.5k
WORST CASE CURRENT DENSITY:
2.5 x 10
5
A/cm
2
This device meets Glassivation Integrity Test Requirement
per MIL-STD-883 Method 2021 and MIL-I-38535 Paragraph 30.5.5.4.
SUBSTRATE POTENTIAL (Powered Up):
Unbiased
TRANSISTOR COUNT: 160
PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5134/883
-IN1
OUT1
OUT4
-IN4
+IN4
V-
+IN3
-IN3
OUT3
OUT2
-IN2
+IN2
V+
+IN1
Spec Number
511033-883
PDF 
ZIP