1
HA-5135/883
Precision Operational Amplifier
Description
The HA-5135/883 is a precision operational amplifier manu-
factured using a combination of key technological advance-
ments to provide outstanding input characteristics.
A high Beta input stage is combined with laser trimming,
dielectric isolation, and matching techniques to produce
75
V (max) input offset voltage and 0.4
V/
o
C (max) input
offset voltage average drift. Other features enhanced by this
process include 9nV/
Hz (typ) Input Noise Voltage, 4nA
Input Bias Current (max) and 120dB Open Loop Gain (min).
These features coupled with 106dB CMRR and 94dB PSRR
make HA-5135/883 an ideal device for precision D.C. instru-
mentation amplifiers. Excellent input characteristics in con-
junction with 0.6MHz (min) bandwidth and 0.5V/
s (min)
slew rate, makes this amplifier extremely useful for precision
integrator and biomedical amplifier designs. These amplifiers
are also well suited for precision data acquisition and for
accurate threshold detector applications.
Part # Information
PART
NUMBER
TEMPERATURE
RANGE
PACKAGE
HA2-5135/883
-55
o
C to +125
o
C
8 Pin Can
Features
This Circuit is Processed in Accordance to MIL-STD-
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
Low Offset Drift . . . . . . . . . . . . . . . . . . . 0.4
V/
o
C (Max)
Low Offset Voltage. . . . . . . . . . . . . . . . . . . . .75
V (Max)
High Gain . . . . . . . . . . . . . . . . . . . . 120dB(1MV/V) (Min)
High CMRR . . . . . . . . . . . . . . . . . . . . . . . . . . 106dB (Min)
High PSRR . . . . . . . . . . . . . . . . . . . . . . . . . . . 94dB (Min)
Low Supply Current. . . . . . . . . . . . . . . . . . 1.7mA (Max)
Low Noise Voltage Density at 1kHz . . . . . 9nV/
Hz (Max)
Low Noise Current Density at 1kHz . . . . 0.4pA/
Hz (Max)
Applications
High Gain Instrumentation
Precision Data Acquisition
Precision Integrators
Biomedical Amplifiers
Precision Threshold Detectors
June 2004
Spec Number
511016-883
FN3731.3
Pinout
HA-5135/883
(METAL CAN)
TOP VIEW
BAL1
OUT
-IN
V- (CASE)
BAL 2
+IN
V+
BAL1
2
4
6
1
3
7
5
8
+
-
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
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Intersil (and design) is a trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2002. All Rights Reserved
OBSO
LETE
PROD
UCT
POSS
IBLE S
UBST
ITUTE
PRODU
CT
HA2-5
127/88
3
2
HA-5135/883
Absolute Maximum Ratings
Thermal Information
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 40V
Differential Input Voltage (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . 7V
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to V-
Input Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA
Output Current . . . . . . . . . . . . . . . . . . . .Full Short Circuit Protection
Junction Temperature (T
J
) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
Storage Temperature Range . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300
o
C
Thermal Resistance
JA
JC
Metal Can Package . . . . . . . . . . . . . . . . .
160
o
C/W
70
o
C/W
Package Power Dissipation Limit at +75
o
C for T
J
+175
o
C
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 645mW
Package Power Dissipation Derating Factor Above +75
o
C
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5mW/
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1.
JA
is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief
TB379 for details.
Operating Conditions
Operating Temperature Range . . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Operating Supply Voltage
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15V
V
INCM
1/2 (V+ - V-)
R
L
600
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
15V, R
SOURCE
= 5
0
, R
LOAD
= 100k
, V
OUT
= 0V, Unless Otherwise Specified.
PARAMETERS
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Input Offset Voltage
V
IO
V
CM
= 0V
1
+25
o
C
-75
75
V
2, 3
+125
o
C, -55
o
C
-130
130
V
Input Bias Current
I
B
V
CM
= 0V,
R
S
= 10k
, 5
0
1
+25
o
C
-4
4
nA
2, 3
+125
o
C, -55
o
C
-6
6
nA
Input Offset Current
I
IO
V
CM
= 0V,
+R
S
= 10k
,
-R
S
= 10k
1
+25
o
C
-4
4
nA
2, 3
+125
o
C, -55
o
C
-5.5
5.5
nA
Common Mode
Range
+CMR
V+ = +3V,
V- = -27V
1
+25
o
C
12
-
V
2, 3
+125
o
C, -55
o
C
12
-
V
-CMR
V+ = +27V,
V- = -3V
1
+25
o
C
-
-12
V
2, 3
+125
o
C, -55
o
C
-
-12
V
Large Signal Voltage
Gain
+A
VOL
V
OUT
= 0V and +10V,
R
L
= 2k
4
+25
o
C
120
-
kV/V
5, 6
+125
o
C, -55
o
C
120
-
kV/V
-A
VOL
V
OUT
= 0V and -10V,
R
L
= 2k
4
+25
o
C
120
-
kV/V
5, 6
+125
o
C, -55
o
C
120
-
kV/V
Common Mode
Rejection Ratio
+CMRR
V
CM
= +10V
,
V+ = +5V, V- = -25V,
V
OUT
= -10V
1
+25
o
C
106
-
dB
2, 3
+125
o
C, -55
o
C
106
-
dB
-CMRR
V
CM
= -10V
,
V+ = +25V, V- = -5V,
V
OUT
= +10V
1
+25
o
C
106
-
dB
2, 3
+125
o
C, -55
o
C
106
-
dB
Output Voltage
Swing
+V
OUT
R
L
= 600
4
+25
o
C
10
-
V
5, 6
+125
o
C, -55
o
C
10
-
V
-V
OUT
R
L
= 600
4
+25
o
C
-
-10
V
5, 6
+125
o
C, -55
o
C
-
-10
V
Output Current
+I
OUT
V
OUT
= -10V
4
+25
o
C
15
-
mA
-I
OUT
V
OUT
= +10V
4
+25
o
C
-
-15
mA
+I
B
I
B
+
2
-----------------------------
Spec Number
511016-883
3
Spec Number
511016-883
HA-5135/883
Quiescent Power
Supply Current
+I
CC
V
OUT
= 0V, I
OUT
=
0mA
1
+25
o
C
-
1.7
mA
2, 3
+125
o
C, -55
o
C
-
1.7
mA
-I
CC
V
OUT
= 0V, I
OUT
=
0mA
1
+25
o
C
-1.7
-
mA
2, 3
+125
o
C, -55
o
C
-1.7
-
mA
Power Supply
Rejection Ratio
+PSRR
V
SUP
= 10V,
V+ = +5V, V- = -15V,
V+ = +15V, V- = -15V
1
+25
o
C
94
-
dB
2, 3
+125
o
C, -55
o
C
94
-
dB
-PSRR
V
SUP
= 10V,
V+ = +15V, V- = -5V,
V+ = +15V, V- = -15V
1
+25
o
C
94
-
dB
2, 3
+125
o
C, -55
o
C
94
-
dB
Offset Voltage
Adjustment
+V
IO
Adj
Note 1
1
+25
o
C
V
IO
-1
-
mV
2, 3
+125
o
C, -55
o
C
V
IO
-1
-
mV
-V
IO
Adj
Note 1
1
+25
o
C
V
IO
+1
-
mV
2, 3
+125
o
C, -55
o
C
V
IO
+1
-
mV
NOTES:
1. Offset adjustment range is [V
IO
(Measured
1mV] minimum referred to output. This test is for functionality only to assure adjustment
through 0V.
2. The input stage has series 500
resistors along with back to back diodes. This provides large differential input voltage protection for a
slight increase in noise voltage.
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
15V, R
SOURCE
= 50
, R
LOAD
= 2k
, C
LOAD
= 50pF, A
VCL
= +1V/V, Unless Otherwise Specified.
PARAMETERS
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Slew Rate
+SR
V
OUT
= -3V to +3V,
V
IN
S.R.
25V/
s
7
+25
o
C
0.5
-
V/
s
-SR
V
OUT
= +3V to -3V,
V
IN
S.R.
25V/
s
7
+25
o
C
0.5
-
V/
s
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: V
SUPPLY
=
15V, R
LOAD
= 2k
, C
LOAD
= 50pF, A
V
= +1V/V, Unless Otherwise Specified.
PARAMETERS
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Average Offset Voltage
Drift
V
IO
TC
V
CM
= 0V
1
-55
o
C to +125
o
C
-
1.3
V/
o
C
Differential Input
Resistance
R
IN
V
CM
= 0V
1
+25
o
C
20
-
M
Average Offset Current
Drift
I
IO
TC
Versus Temperature
V
CM
= 0V
1
-55
o
C to +125
o
C
-
40
pA
/
o
C
Average Bias Current Drift
I
B
TC
Versus Temperature
V
CM
= 0V
1
-55
o
C to +125
o
C
-
40
pA
/
o
C
Input Noise Voltage
Density
E
N
R
S
= 20
, f
O
= 1kHz
1
+25
o
C
-
11
nV
/
Hz
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: V
SUPPLY
=
15V, R
SOURCE
= 5
0
, R
LOAD
= 100k
, V
OUT
= 0V, Unless Otherwise Specified.
PARAMETERS
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
4
Spec Number
511016-883
HA-5135/883
Input Noise Current
Density
I
N
R
S
= 2M
, f
O
= 1kHz
1
+25
o
C
-
0.4
pA
/
Hz
Unity Gain Bandwidth
UGBW
V
OUT
=
100mV,
f
O
at -3dB
1
+25
o
C
600
-
kHz
Full Power Bandwidth
FPBW
V
PEAK
= 10V
1, 2
+25
o
C
8
-
kHz
Minimum Closed Loop
Stable Gain
CLSG
R
L
= 2k
, C
L
= 50pF
1
-55
o
C to +125
o
C
+
1
-
V/V
Output Resistance
R
OUT
Open Loop
1
+25
o
C
-
80
Power Consumption
PC
V
OUT
= 0V, I
OUT
=
0mA
1, 3
-55
o
C to +125
o
C
-
51
mW
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-
eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2
V
PEAK
).
3. Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.)
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
SUBGROUPS (SEE TABLES 1 AND 2)
Interim Electrical Parameters (Pre Burn-In)
1
Final Electrical Test Parameters
1 (Note 1), 2, 3, 4, 5, 6, 7
Group A Test Requirements
1, 2, 3, 4, 5, 6, 7
Groups C and D Endpoints
1
NOTE:
1. PDA applies to Subgroup 1 only.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Characterized at: V
SUPPLY
=
15V, R
LOAD
= 2k
, C
LOAD
= 50pF, A
V
= +1V/V, Unless Otherwise Specified.
PARAMETERS
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
5
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation's quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
7585 Irvine Center Drive
Suite 100
Irvine, CA 92618
TEL: (949) 341-7000
FAX: (949) 341-7123
Intersil Corporation
2401 Palm Bay Rd.
Palm Bay, FL 32905
TEL: (321) 724-7000
FAX: (321) 724-7946
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Intersil Europe Sarl
Ave. William Graisse, 3
1006 Lausanne
Switzerland
TEL: +41 21 6140560
FAX: +41 21 6140579
ASIA
Intersil Corporation
Unit 1804 18/F Guangdong Water Building
83 Austin Road
TST, Kowloon Hong Kong
TEL: +852 2723 6339
FAX: +852 2730 1433
HA-5135/883
Die Characteristics
DIE DIMENSIONS:
72 x 103 x 19 mils
1 mils
1840 x 2620
x 483
m
25.4
m
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16k
2k
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SIO2, 5% Phos.)
Silox Thickness: 12k
2k
Nitride Thickness: 3.5k
1.5k
WORST CASE CURRENT DENSITY:
6.0 x 10
4
A/cm
2
SUBSTRATE POTENTIAL (Powered Up): V-
TRANSISTOR COUNT: 71
PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5135/883
BAL1
V+
OUT
BAL1
V-
+IN
-IN
BAL2
Spec Number
511016-883
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