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Электронный компонент: HCS112DMSR

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11
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
Ordering Information
PART NUMBER
TEMPERATURE RANGE
SCREENING LEVEL
PACKAGE
HCS112DMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
16 Lead SBDIP
HCS112KMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
16 Lead Ceramic Flatpack
HCS112D/Sample
+25
o
C
Sample
16 Lead SBDIP
HCS112K/Sample
+25
o
C
Sample
16 Lead Ceramic Flatpack
HCS112HMSR
+25
o
C
Die
Die
HCS112MS
Radiation Hardened
Dual JK Flip-Flop
Pinouts
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T16, LEAD FINISH C
TOP VIEW
16 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F16, LEAD FINISH C
TOP VIEW
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
CP1
KA
JA
SA
QA
QA
GND
QB
VCC
RB
CPB
KB
JB
SB
QB
RA
CP1
KA
JA
SA
QA
QA
QB
GND
2
3
4
5
6
7
8
1
16
15
14
13
12
11
10
9
VCC
RA
RB
CPB
KB
JB
SB
QB
Features
3 Micron Radiation Hardened SOS CMOS
Total Dose 200K RAD (Si)
SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/
Bit-Day (Typ)
Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
Latch-Up Free Under Any Conditions
Military Temperature Range: -55
o
C to +125
o
C
Significant Power Reduction Compared to LSTTL ICs
DC Operating Voltage Range: 4.5V to 5.5V
Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
Input Current Levels Ii
5
A at VOL, VOH
Description
The Intersil HCS112MS is a Radiation Hardened dual JK
flip-flop with set and reset. The output changes state on the
negative going transition of the clock pulse. Set and reset
are accomplished asynchronously by a logic low input level.
The HCS112MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS112MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
September 1995
Spec Number
518830
File Number
3558.1
DB NA
12
HCS112MS
Functional Diagram
TRUTH TABLE
INPUTS
OUTPUTS
S
R
CP
J
K
Q
Q
L
H
X
X
X
H
L
H
L
X
X
X
L
H
L
L
X
X
X
H*
H*
H
H
L
L
No Change
H
H
H
L
H
L
H
H
L
H
L
H
H
H
H
H
Toggle
H
H
H
X
X
No Change
H = High Steady State, L = Low Steady State, X = Immaterial,
= High-to-Low Transition
* Output States Unpredictable if S and R Go High Simultaneously after Both being Low at the Same Time
15(14)
CP
1(13)
4(10)
R
S
2(12)
K
3(11)
J
P
N
CL
CL
5 (9)
Q
6 (7)
Q
CL
CL
P
N
CL
CL
P
N
CL
CL
P
N
CL
CL
Spec Number
518830
13
Specifications HCS112MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .
10mA
DC Drain Current, Any One Output
. . . . . . . . . . . . . . . . . . . . . . .
25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
JA
JC
SBDIP Package. . . . . . . . . . . . . . . . . . . .
73
o
C/W
24
o
C/W
Ceramic Flatpack Package . . . . . . . . . . .
114
o
C/W
29
o
C/W
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/
o
C
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Rise and Fall Times at VCC = 4.5V (TR, TF) . . . 100ns/V Max
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . VCC to 70% of VCC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
ICC
VCC = 5.5V,
VIN = VCC or GND
1
+25
o
C
-
20
A
2, 3
+125
o
C, -55
o
C
-
400
A
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V,
(Note 2)
1
+25
o
C
4.8
-
mA
2, 3
+125
o
C, -55
o
C
4.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC - 0.4V,
VIL = 0V, (Note 2)
1
+25
o
C
-4.8
-
mA
2, 3
+125
o
C, -55
o
C
-4.0
-
mA
Output Voltage Low
VOL
VCC = 5.5V, VIH = 3.85V,
IOL = 50
A, VIL = 1.65V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
VCC = 4.5V, VIH = 3.15V,
IOL = 50
A, VIL = 1.35V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 5.5V, VIH = 3.85V,
IOH = -50
A, VIL = 1.65V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
VCC = 4.5V, VIH = 3.15V,
IOH = -50
A, VIL = 1.35V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
+25
o
C
0.5
A
2, 3
+125
o
C, -55
o
C
5.0
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V (Note 3)
7, 8A, 8B
+25
o
C, +125
o
C, -55
o
C
-
-
-
NOTES:
1. All voltages referenced to device GND.
2. Force/Measure Functions may be interchanged.
3. For functional tests, VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
Spec Number
518830
14
Specifications HCS112MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
PROPAGATION DELAY
CP to Q, Q
TPHL,
TPLH
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
+25
o
C
2
28
ns
10, 11
+125
o
C, -55
o
C
2
35
ns
S to Q
TPHL
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
+25
o
C
2
27
ns
10, 11
+125
o
C, -55
o
C
2
33
ns
S to Q
TPLH
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
+25
o
C
2
27
ns
10, 11
+125
o
C, -55
o
C
2
33
ns
R to Q
TPHL
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
+25
o
C
2
26
ns
10, 11
+125
o
C, -55
o
C
2
32
ns
R to Q
TPLH
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
+25
o
C
2
26
ns
10, 11
+125
o
C, -55
o
C
2
32
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Capacitance Power
Dissipation
CPD
VCC = 5.0V, VIH = 5.0V,
VIL = 0.0V, f = 1MHz
1
+25
o
C
-
15
pF
1
+125
o
C, -55
o
C
-
45
pF
Input Capacitance
CIN
VCC = 5.0V, VIH = 5.0V,
VIL = 0.0V, f = 1MHz
1
+25
o
C
-
10
pF
1
+125
o
C, -55
o
C
-
10
pF
Output Capacitance
COUT
VCC =5.0V, VIH = 5.0V,
VIL = 0.0V, f = 1MHz
1
+25
o
C
-
10
ns
1
+125
o
C, -55
o
C
-
10
ns
Pulse Width Time
CP, R, S
TW
VCC = 4.5V, VIH = 4.5V,
VIL = 0.0V,
1
+25
o
C
16
-
ns
1
+125
o
C, -55
o
C
24
-
ns
Setup Time J, K to
CP
TSU
VCC = 4.5V, VIH = 4.5V,
VIL = 0.0V,
1
+25
o
C
16
-
ns
1
+125
o
C, -55
o
C
24
-
ns
Hold Time J, K to CP
TH
VCC = 4.5V, VIH = 4.5V,
VIL = 0.0V,
1
+25
o
C
0
-
ns
1
+125
o
C, -55
o
C
0
-
ns
Removal Time
S to CP, R to CP
TREM
VCC = 4.5V, VIH = 4.5V,
VIL = 0.0V,
1
+25
o
C
16
-
ns
1
+125
o
C, -55
o
C
24
-
ns
Max Operating
Frequency
FMAX
VCC = 4.5V, VIH = 4.5V,
VIL = 0.0V,
1
+25
o
C
30
-
MHz
1
+125
o
C, -55
o
C
20
-
MHz
Output Transition
Time
TTHL,
TTLH
VCC = 4.5V , VIH = 4.5V,
VIL = 0.0V,
1
+25
o
C
1
15
ns
1
+125
o
C, -55
o
C
1
22
ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
Spec Number
518830
15
Specifications HCS112MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
200K LIMITS
RAD
UNITS
MIN
MAX
Supply Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
0.4
mA
Output Current (Sink)
IOL
VCC = VIH = 4.5V, VIL = 0.0V,
VOUT = 0.4V
+25
o
C
4.0
-
mA
Output Current
(Source)
IOH
VCC = VIH = 4.5V, VIL = 0.0V,
VOUT = VCC -0.4V
+25
o
C
-4.0
-
mA
Output Voltage Low
VOL
VCC = 5.5V, VIH = 3.85V,
VIL = 1.65V, IOL = 50
A
+25
o
C
-
0.1
V
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOL = 50
A
+25
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 5.5V, VIH = 3.85V,
VIL =1.65V, IOH = -50
A
+25
o
C
VCC
-0.1
-
V
VCC = 4.5V, VIH = 3.15V,
VIL =1.35V, IOH = -50
A
+25
o
C
VCC
-0.1
-
V
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25
o
C
5
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH =3.15V, VIL = 1.35V,
(Note 3)
+25
o
C
-
-
-
PROPAGATION DELAY
CP to Q, Q
TPHL,
TPLH
VCC = 4.5V
+25
o
C
2
35
ns
S to Q
TPLH
VCC = 4.5V
+25
o
C
2
33
ns
S to Q
TPHL
VCC = 4.5V
+25
o
C
2
33
ns
R to Q
TPHL
VCC = 4.5V
+25
o
C
2
32
ns
R to Q
TPLH
VCC = 4.5V
+25
o
C
2
32
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
3. For functional tests VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
PARAMETER
GROUP B
SUBGROUP
DELTA LIMIT
ICC
5
6
A
IOL/IOH
5
-15% of 0 Hour
Spec Number
518830