1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
HCS14MS
Radiation Hardened
HEX Inverting Schmitt Trigger
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T14
TOP VIEW
14 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP3-F14
TOP VIEW
Functional Diagram
TRUTH TABLE
INPUTS
An
OUTPUTS
Yn
L
H
H
L
NOTE: L = Logic Level Low,
H = Logic level High
A1
Y1
A2
Y2
A3
Y3
GND
VCC
A6
Y6
A5
Y5
A4
Y4
1
2
3
4
5
6
7
14
13
12
11
10
9
8
14
13
12
11
10
9
8
2
3
4
5
6
7
1
A1
Y1
A2
Y2
A3
Y3
GND
VCC
A6
Y6
A5
Y5
A4
Y4
Yn
An
Features
3 Micron Radiation Hardened SOS CMOS
Total Dose 200K RAD(Si)
SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/Bit-Day
(Typ)
Dose Rate Survivability: >1 x 10
12
Rads (Si)/s
Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
Latch-Up Free Under Any Conditions
Military Temperature Range: -55
o
C to +125
o
C
Significant Power Reduction Compared to LSTTL ICs
DC Operating Voltage Range: 4.5V to 5.5V
Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
Input Current Levels Ii
5
A at VOL, VOH
Description
The Intersil HCS14MS is a Radiation Hardened HEX Inverting
Schmitt trigger. A high on any input forces the output to a Low
state.
The HCS14MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS14MS is supplied in a 14 lead Ceramic flatpack Package
(K suffix) or a 14 lead SBDIP Package (D suffix).
Ordering Information
PART
NUMBER
TEMPERATURE
RANGE
SCREENING
LEVEL
PACKAGE
HCS14DMSR
-55
o
C to +125
o
C
Intersil Class
S Equivalent
14 Lead SBDIP
HCS14KMSR
-55
o
C to +125
o
C
Intersil Class
S Equivalent
14 Lead Ceramic
Flatpack
HCS14D/
Sample
+25
o
C
Sample
14 Lead SBDIP
HCS14K/
Sample
+25
o
C
Sample
14 Lead Ceramic
Flatpack
HCS14HMSR
+25
o
C
Die
Die
Spec Number
518752
File Number
3049.1
August 1995
DB NA
2
Specifications HCS14MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .
10mA
DC Drain Current, Any One Output
. . . . . . . . . . . . . . . . . . . . . . .
25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
JA
JC
SBDIP Package. . . . . . . . . . . . . . . . . . . .
74
o
C/W
24
o
C/W
Ceramic Flatpack Package . . . . . . . . . . .
116
o
C/W
30
o
C/W
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.66W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.5mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.6mW/
o
C
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . Unlimited Max
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . .0.0V to 30% of VCC Max.
Input High Voltage (VIH) . . . . . . . . . . . . . . 70% of VCC to VCC Min.
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETERS
SYMBOL
(NOTE 1)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V,
VIN = VCC or GND
1
+25
o
C
-
10
A
2, 3
+125
o
C, -55
o
C
-
200
A
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
1
+25
o
C
4.8
-
mA
2, 3
+125
o
C, -55
o
C
4.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
1
+25
o
C
-4.8
-
mA
2, 3
+125
o
C, -55
o
C
-4.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V, VIH = 3.15V,
IOL = 50
A, VIL = 1.35V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
VCC = 5.5V, VIH = 3.85V,
IOL = 50
A, VIL = 1.65V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V, VIH = 3.15V,
IOH = -50
A, VIL = 1.35V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
VCC = 5.5V, VIH = 3.85V,
IOH = -50
A, VIL = 1.65V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
+25
o
C
-
0.5
A
2, 3
+125
o
C, -55
o
C
-
5.0
A
Input Switch Point
Vt+
VCC = 4.5V
1
+25
o
C
2.00
3.15
V
2, 3
+125
o
C, -55
o
C
2.00
3.15
V
Vt-
VCC = 4.5V
1
+25
o
C
1.35
2.60
V
2, 3
+125
o
C, -55
o
C
1.35
2.60
V
VH
VCC = 4.5V
1
+25
o
C
0.40
1.40
V
2, 3
+125
o
C, -55
o
C
0.40
1.40
V
Noise Immunity
Functional Test
FN
VCC = 4.5V,
VIH = 0.70(VCC), (Note 2)
VIL = 0.30(VCC)
7, 8A, 8B
+25
o
C, +125
o
C, -55
o
C
-
-
-
NOTES:
1. All voltages reference to device GND.
2. For functional tests, VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
Spec Number
518752
3
Specifications HCS14MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Input to Output
TPHL
VCC = 4.5V
9
+25
o
C
2
18
ns
10, 11
+125
o
C, -55
o
C
2
20
ns
Input to Output
TPLH
VCC = 4.5V
9
+25
o
C
2
22
ns
10, 11
+125
o
C, -55
o
C
2
25
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Capacitance Power
Dissipation
CPD
VCC = 5.0V, VIH = 5.0V,
VIL = 0V, f = 1MHz
1
+25
o
C
-
33
pF
1
+125
o
C, -55
o
C
-
40
pF
Input Capacitance
CIN
VCC = 5.0V, VIH = 5.0V,
VIL = 0V, f = 1MHz
1
+25
o
C
-
10
pF
1
+125
o
C
-
10
pF
Output Transition
Time
TTHL
TTLH
VCC = 4.5V
1
+25
o
C
-
15
ns
1
+125
o
C
-
22
ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETERS
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
200K RAD LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
0.2
mA
Output Current (Sink)
IOL
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
+25
o
C
4.0
-
mA
Output Current (Source)
IOH
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
+25
o
C
-4.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V and 5.5V,
VIH = 0.70(VCC),
VIL = 0.20(VCC), IOL = 50
A
+25
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V and 5.5V,
VIH = 0.70(VCC),
VIL = 0.20(VCC), IOH = -50
A
+25
o
C
VCC
-0.1
-
V
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
5
A
Noise Immunity Functional Test
FN
VCC = 4.5V, VIH = 0.70(VCC),
VIL = 0.20(VCC), (Note 3)
+25
o
C
-
-
-
Input to Output
TPHL
VCC = 4.5V
+25
o
C
2
21
ns
TPLH
VCC = 4.5V
+25
o
C
2
26
ns
Spec Number
518752
4
Specifications HCS14MS
Input Switch Points
VT+
VCC = 4.5
+25
o
C
1.7
3.15
V
VT-
VCC = 4.5
+25
o
C
0.9
2.10
V
VH
VCC = 4.5
+25
o
C
0.4
1.40
V
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
3. For functional tests, VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
PARAMETER
GROUP B
SUBGROUP
DELTA LIMIT
ICC
5
3
A
IOL/IOH
5
-15% of 0 Hour
TABLE 6. APPLICABLE SUBGROUPS
GROUP A SUBGROUPS
CONFORMANCE GROUPS
MIL-STD-883 METHOD
TESTED FOR -Q
RECORDED FOR -Q
Initial Test
100% 5004
1, 7, 9
1 (Note 2)
Interim Test
100% 5004
1, 7, 9,
1,
(Note 2)
PDA
100% 5004
1, 7,
Final Test
100% 5004
2, 3, 8A, 8B, 10, 11
Group A (Note 1)
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Subgroup B5
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11,
1, 2, 3,
(Note 2)
Subgroup B6
Sample 5005
1, 7, 9
Group D
Sample 5005
1, 7, 9
NOTES:
1. Alternate Group A testing in accordance with MIL-STD-883 Method 5005 may be exercised.
2. Table 5 parameters only.
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE
GROUPS
METHOD
TEST
READ AND RECORD
PRE RAD
POST RAD
PRE RAD
POST RAD
Group E Subgroup 2
5005
1, 7, 9
Table 4
1, 9
Table 4 (Note 1)
NOTE:
1. Except FN test which will be performed 100% Go/No-Go.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETERS
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
200K RAD LIMITS
UNITS
MIN
MAX
Spec Number
518752
5
Specifications HCS14MS
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS
OPEN
GROUND
1/2 VCC = 3V
0.5V
VCC = 6V
0.5V
OSCILLATOR
50kHz
25kHz
STATIC BURN-IN I TEST CONDITIONS (Note 1)
2, 4, 6, 8, 10, 12
1, 3, 5, 7, 9, 11, 13
-
14
-
-
STATIC BURN-IN II TEST CONNECTIONS (Note 1)
2, 4, 6, 8, 10, 12
7
-
1, 3, 5, 9, 11, 13, 14
-
-
DYNAMIC BURN-IN I TEST CONNECTIONS (Note 2)
-
7
2, 4, 6, 8, 10, 12
14
1, 3, 5, 9, 11, 13
-
NOTES:
1. Each pin except VCC and GND will have a resistor of 10k
5% for static burn-in.
2. Each pin except VCC and GND will have a resistor of 1k
5% for dynamic burn-in.
TABLE 9. IRRADIATION TEST CONNECTIONS
OPEN
GROUND
VCC = 5V
0.5V
2, 4, 6, 8, 10, 12
7
1, 3, 5, 9, 11, 13, 14
NOTE: Each pin except VCC and GND will have a resistor of 47k
5% for irradiation testing.
Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
Spec Number
518752
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