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Электронный компонент: HCS151K

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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
HCS151MS
Radiation Hardened
8-Input Multiplexer
Pinouts
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T16
TOP VIEW
16 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F16
TOP VIEW
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
I3
I2
I1
I0
Y
Y
GND
E
VCC
I5
I6
I7
S0
S1
S2
I4
I3
I2
I1
I0
Y
Y
GND
E
VCC
I5
I6
I7
S0
S1
S2
I4
2
3
4
5
6
7
8
1
16
15
14
13
12
11
10
9
Features
3 Micron Radiation Hardened SOS CMOS
Total Dose 200K RAD (Si)
SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/
Bit-Day (Typ)
Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
Cosmic Ray Upset Immunity 2 x 10
-9
Error/Gate Day
(Typ)
Latch-Up Free Under Any Conditions
Military Temperature Range: -55
o
C to +125
o
C
Significant Power Reduction Compared to LSTTL ICs
DC Operating Voltage Range: 4.5V to 5.5V
Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
Input Current Levels Ii
5
A at VOL, VOH
Description
The Intersil HCS151MS is a Radiation Hardened 8-Input
Multiplexer having three binary control inputs (S0, S1, S2)
and an active low enable (E) input. The three binary signals
select one of eight channels. Outputs are both inverting and
non-inverting.
The HCS151MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS151MS is supplied in a 16 lead Ceramic flatpack (K
suffix) or a SBDIP Package (D suffix).
September 1995
Ordering Information
PART NUMBER
TEMPERATURE RANGE
SCREENING LEVEL
PACKAGE
HCS151DMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
16 Lead SBDIP
HCS151KMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
16 Lead Ceramic Flatpack
HCS151D/Sample
+25
o
C
Sample
16 Lead SBDIP
HCS151K/Sample
+25
o
C
Sample
16 Lead Ceramic Flatpack
HCS151HMSR
+25
o
C
Die
Die
Spec Number
518753
File Number
3077.1
DB NA
164
HCS151MS
Functional Diagram
TRUTH TABLE
INPUTS
OUTPUTS
E
S0
S1
S2
I0
I1
I2
I3
I4
I5
I6
I7
Y
Y
H
X
X
X
X
X
X
X
X
X
X
X
H
L
L
L
L
L
L
X
X
X
X
X
X
X
H
L
L
L
L
L
H
X
X
X
X
X
X
X
L
H
L
L
L
H
X
L
X
X
X
X
X
X
H
L
L
L
L
H
X
H
X
X
X
X
X
X
L
H
L
L
H
L
X
X
L
X
X
X
X
X
H
L
L
L
H
L
X
X
H
X
X
X
X
X
L
H
L
L
H
H
X
X
X
L
X
X
X
X
H
L
L
L
H
H
X
X
X
H
X
X
X
X
L
H
L
H
L
L
X
X
X
X
L
X
X
X
H
L
L
H
L
L
X
X
X
X
H
X
X
X
L
H
L
H
L
H
X
X
X
X
X
L
X
X
H
L
L
H
L
H
X
X
X
X
X
H
X
X
L
H
L
H
H
L
X
X
X
X
X
X
L
X
H
L
L
H
H
L
X
X
X
X
X
X
H
X
L
H
L
H
H
H
X
X
X
X
X
X
X
L
H
L
L
H
H
H
X
X
X
X
X
X
X
H
L
H
H = High Level, L = Low Level, X = Don't Care
S0
S1
S2
S0
S1
S2
S0
S1
S2
S0
S1
S2
S0
S1
S2
S0
S1
S2
S0
S1
S2
S0
S1
S2
S0
11
S0
S0
S1
10
S1
S1
S2
9
S2
S2
Y
Y
6
8
7
16
8
E
VCC
GND
I0
I1
I2
I3
I4
I5
I6
I7
Spec Number
518753
165
Specifications HCS151MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .
10mA
DC Drain Current, Any One Output
. . . . . . . . . . . . . . . . . . . . . . .
25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
JA
JC
SBDIP Package. . . . . . . . . . . . . . . . . . . .
73
o
C/W
24
o
C/W
Ceramic Flatpack Package . . . . . . . . . . .
114
o
C/W
29
o
C/W
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/
o
C
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . . .500ns Max
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . 70% of VCC to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V,
VIN = VCC or GND
1
+25
o
C
-
40
A
2, 3
+125
o
C, -55
o
C
-
750
A
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
1
+25
o
C
4.8
-
mA
2, 3
+125
o
C, -55
o
C
4.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
1
+25
o
C
-4.8
-
mA
2, 3
+125
o
C, -55
o
C
-4.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V, VIH = 3.15V,
IOL = 50
A, VIL = 1.35V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
VCC = 5.5V, VIH = 3.85V,
IOL = 50
A, VIL = 1.65V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V, VIH = 3.15V,
IOH = -50
A, VIL = 1.35V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
VCC = 5.5V, VIH = 3.85V,
IOH = -50
A, VIL = 1.65V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
+25
o
C
-
0.5
A
2, 3
+125
o
C, -55
o
C
-
5.0
A
Noise Immunity
Functional Test
FN
VCC = 4.5V,
VIH = 0.70(VCC),
VIL = 0.30(VCC) (Note 2)
7, 8A, 8B
+25
o
C, +125
o
C, -55
o
C
-
-
-
NOTES:
1. All voltages reference to device GND.
2. For functional tests, VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
Spec Number
518753
166
Specifications HCS151MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Input to Y
TPHL
TPLH
VCC = 4.5V
9
+25
o
C
2
21
ns
10, 11
+125
o
C, -55
o
C
2
23
ns
Input to Y
TPHL
TPLH
VCC = 4.5V
9
+25
o
C
2
24
ns
10, 11
+125
o
C, -55
o
C
2
27
ns
Select to Y
TPHL
TPLH
VCC = 4.5V
9
+25
o
C
2
25
ns
10, 11
+125
o
C, -55
o
C
2
29
ns
Select to Y
TPHL
TPLH
VCC = 4.5V
9
+25
o
C
2
29
ns
10, 11
+125
o
C, -55
o
C
2
33
ns
E to Y
TPHL
TPLH
VCC = 4.5V
9
+25
o
C
2
17
ns
10, 11
+125
o
C, -55
o
C
2
19
ns
E to Y
TPHL
TPLH
VCC = 4.5V
9
+25
o
C
2
20
ns
10, 11
+125
o
C, -55
o
C
2
21
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Capacitance Power
Dissipation
CPD
VCC = 5.0V, f = 1MHz
1
+25
o
C
-
68
pF
1
+125
o
C
-
83
pF
Input Capacitance
CIN
VCC = 5.0V, f = 1MHz
1
+25
o
C
-
10
pF
1
+125
o
C
-
10
pF
Output Transition
Time
TTHL
TTLH
VCC = 4.5V
1
+25
o
C
-
15
ns
1
+125
o
C
-
22
ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
Spec Number
518753
167
Specifications HCS151MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
200K RAD
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
750
A
Output Current (Sink)
IOL
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
+25
o
C
4.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
+25
o
C
-4.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V and 5.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC) at 200K RAD, IOL = 50
A
+25
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V and 5.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC) at 200K RAD, IOH = -50
A
+25
o
C
VCC
-0.1
-
V
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
5
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC) at 200K RAD, (Note 3)
+25
o
C
-
-
-
Input to Y
TPHL
TPLH
VCC = 4.5V
+25
o
C
2
29
ns
Input to Y
TPHL
TPLH
VCC = 4.5V
+25
o
C
2
34
ns
Select to Y
TPHL
TPLH
VCC = 4.5V
+25
o
C
2
37
ns
Select to Y
TPHL
TPLH
VCC = 4.5V
+25
o
C
2
42
ns
E to Y
TPHL
TPLH
VCC = 4.5V
+25
o
C
2
24
ns
E to Y
TPHL
TPLH
VCC = 4.5V
+25
o
C
2
27
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
3. For functional tests, VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
PARAMETER
GROUP B
SUBGROUP
DELTA LIMIT
ICC
5
12
A
IOL/IOH
5
-15% of 0 Hour
Spec Number
518753