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Электронный компонент: HCS154HMSR

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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
Ordering Information
PART NUMBER
TEMPERATURE RANGE
SCREENING LEVEL
PACKAGE
HCS154DMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
24 Lead SBDIP
HCS154KMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
24 Lead Ceramic Flatpack
HCS154D/Sample
+25
o
C
Sample
24 Lead SBDIP
HCS154K/Sample
+25
o
C
Sample
24 Lead Ceramic Flatpack
HCS154HMSR
+25
o
C
Die
Die
HCS154MS
Radiation Hardened
4-to-16 Line Decoder/Demultiplexer
Pinouts
24 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T24
TOP VIEW
24 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F24
TOP VIEW
GND
VCC
Y0
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
Y10
Y11
Y12
Y13
Y14
Y15
1
2
3
4
5
6
7
8
9
10
11
12
16
17
18
19
20
21
22
23
24
15
14
13
A0
A1
A2
A3
E1
E2
24
23
22
21
20
19
18
17
16
15
14
13
2
3
4
5
6
7
8
9
10
11
12
1
ND
Y0
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
Y10
VCC
Y11
Y12
Y13
Y14
Y15
A0
A1
A2
A3
E1
E2
Features
3 Micron Radiation Hardened SOS CMOS
Total Dose 200K RAD (Si)
SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/
Bit-Day (Typ)
Dose Rate Survivability: >1 x 10
12
Rads (Si)/s
Dose Rate Upset >10
10
RAD(Si)/s 20ns Pulse
Cosmic Ray Upset Immunity < 2 x 10
-9
Errors/Gate Day
(Typ)
Latch-Up Free Under Any Conditions
Military Temperature Range: -55
o
C to +125
o
C
Significant Power Reduction Compared to LSTTL ICs
DC Operating Voltage Range: 4.5V to 5.5V
Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
Input Current Levels Ii
5
A at VOL, VOH
Description
The Intersil HCS154MS is a Radiation Hardened 4 to 16 line
Decoder/Demultiplexer with two enable inputs. A high on
either enable input forces the output to a high state. The
Demultiplexing function is performed by using the four input
lines A0 to A3 to select the desired output states.
The HCS154MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS154MS is supplied in a 24 lead Ceramic flatpack (K
suffix) or a SBDIP Package (D suffix).
September1995
Spec Number
518754
File Number
2479.2
DB NA
2
HCS154MS
Functional Diagram
TRUTH TABLE
INPUTS
OUTPUTS
E1
E2
A0
A1
A2
A3
Y0
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
Y10
Y11
Y12
Y13
Y14
Y15
L
L
L
L
L
L
L
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
H
H
L
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
L
L
L
H
L
H
H
L
H
H
H
H
H
H
H
H
H
H
H
H
H
L
L
L
L
H
H
H
H
H
L
H
H
H
H
H
H
H
H
H
H
H
H
L
L
L
H
L
L
H
H
H
H
L
H
H
H
H
H
H
H
H
H
H
H
L
L
L
H
L
H
H
H
H
H
H
L
H
H
H
H
H
H
H
H
H
H
L
L
L
H
H
L
H
H
H
H
H
H
L
H
H
H
H
H
H
H
H
H
L
L
L
H
H
H
H
H
H
H
H
H
H
L
H
H
H
H
H
H
H
H
L
L
H
L
L
L
H
H
H
H
H
H
H
H
L
H
H
H
H
H
H
H
L
L
H
L
L
H
H
H
H
H
H
H
H
H
H
L
H
H
H
H
H
H
L
L
H
L
H
L
H
H
H
H
H
H
H
H
H
H
L
H
H
H
H
H
L
L
H
L
H
H
H
H
H
H
H
H
H
H
H
H
H
L
H
H
H
H
L
L
H
H
L
L
H
H
H
H
H
H
H
H
H
H
H
H
L
H
H
H
L
L
H
H
L
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
H
H
L
L
H
H
H
L
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
H
L
L
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
L
H
X
X
X
X
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
X
X
X
X
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
X
X
X
X
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H = High Level, L = Low Level, X = Immaterial
Spec Number
518754
3
Specifications HCS154MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .
10mA
DC Drain Current, Any One Output
. . . . . . . . . . . . . . . . . . . . . . .
25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
JA
JC
SBDIP Package. . . . . . . . . . . . . . . . . . . .
63
o
C/W
23
o
C/W
Ceramic Flatpack Package . . . . . . . . . . .
87
o
C/W
23
o
C/W
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.79W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.57W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15.9mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . 11.5mW/
o
C
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . . .100ns Max
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . 70% of VCC to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETERS
SYMBOL
(NOTE 1)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V,
VIN = VCC or GND
1
+25
o
C
-
40
A
2, 3
+125
o
C, -55
o
C
-
750
A
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
1
+25
o
C
4.8
-
mA
2, 3
+125
o
C, -55
o
C
4.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
1
+25
o
C
-4.8
-
mA
2, 3
+125
o
C, -55
o
C
-4.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V, VIH = 3.15V,
IOL = 50
A, VIL = 1.35V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
VCC = 5.5V, VIH = 3.85V,
IOL = 50
A, VIL = 1.65V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V, VIH = 3.15V,
IOH = -50
A, VIL = 1.35V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
VCC = 5.5V, VIH = 3.85V,
IOH = -50
A, VIL = 1.65V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
+25
o
C
-
0.5
A
2, 3
+125
o
C, -55
o
C
-
5.0
A
Noise Immunity
Functional Test
FN
VCC = 4.5V,
VIH = 0.70(VCC), (Note 2)
VIL = 0.30(VCC)
7, 8A, 8B
+25
o
C, +125
o
C, -55
o
C
-
-
-
NOTES:
1. All voltages reference to device GND.
2. For functional tests, VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
Spec Number
518754
4
Specifications HCS154MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Address to Output
TPLH
VCC = 4.5V
9
+25
o
C
2
29
ns
10, 11
+125
o
C, -55
o
C
2
34
ns
TPHL
VCC = 4.5V
9
+25
o
C
2
27
ns
10, 11
+125
o
C, -55
o
C
2
31
ns
Enable to Output
TPLH
TPHL
VCC = 4.5V
9
+25
o
C
2
27
ns
10, 11
+125
o
C, -55
o
C
2
27
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Capacitance Power
Dissipation
CPD
VCC = 5.0V, f = 1MHz
1
+25
o
C
-
66
pF
1
+125
o
C, -55
o
C
-
74
pF
Input Capacitance
CIN
VCC = 5.0V, f = 1MHz
1
+25
o
C
-
10
pF
1
+125
o
C
-
10
pF
Output Transition
Time
TTHL
TTLH
VCC = 4.5V
1
+25
o
C
-
15
ns
1
+125
o
C
-
22
ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETERS
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
200K RAD
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
0.75
mA
Output Current (Sink)
IOL
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
+25
o
C
4.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
+25
o
C
-4.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V and 5.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), IOL = 50
A
+25
o
C
-
0.1
V
Spec Number
518754
5
Specifications HCS154MS
Output Voltage High
VOH
VCC = 4.5V or 5.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), IOH = -50
A
+25
o
C
VCC
-0.1
-
V
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
5
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), (Note 3)
+25
o
C
-
-
-
Address to Output
TPLH
VCC = 4.5V
+25
o
C
2
34
ns
TPHL
VCC = 4.5V
+25
o
C
2
31
ns
Enable to Output
TPLH
TPHL
VCC = 4.5V
+25
o
C
2
27
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
3. For functional tests, VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
PARAMETER
GROUP B
SUBGROUP
DELTA LIMIT
ICC
5
12
A
IOL/IOH
5
-15% of 0 Hour
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
METHOD
GROUP A SUBGROUPS
READ AND RECORD
Initial Test (Preburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
Interim Test
I
(Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
Interim Test
II
(Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
PDA
100%/5004
1, 7, 9, Deltas
Interim Test
III
(Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
PDA
100%/5004
1, 7, 9, Deltas
Final Test
100%/5004
2, 3, 8A, 8B, 10, 11
Group A (Note 1)
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B
Subgroup B-5
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroups 1, 2, 3, 9, 10, 11
Subgroup B-6
Sample/5005
1, 7, 9
Group D
Sample/5005
1, 7, 9
NOTE:
1. Alternate Group A testing in accordance with Method 5005 of MIL-STD-883 may be exercised.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETERS
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
200K RAD
LIMITS
UNITS
MIN
MAX
Spec Number
518754