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Электронный компонент: HCS157DMSR

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173
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
Ordering Information
PART NUMBER
TEMPERATURE RANGE
SCREENING LEVEL
PACKAGE
HCS157DMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
16 Lead SBDIP
HCS157KMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
16 Lead Ceramic Flatpack
HCS157D/Sample
+25
o
C
Sample
16 Lead SBDIP
HCS157K/Sample
+25
o
C
Sample
16 Lead Ceramic Flatpack
HCS157HMSR
+25
o
C
Die
Die
HCS157MS
Radiation Hardened
Quad 2-Input Multiplexers
Pinouts
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T16, LEAD FINISH C
TOP VIEW
16 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F16, LEAD FINISH C
TOP VIEW
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
S
1I0
1I1
1Y
2I0
2I1
GND
2Y
VCC
4I0
4I1
4Y
3I0
3I1
3Y
E
2
3
4
5
6
7
8
1
16
15
14
13
12
11
10
9
S
1I0
1I1
1Y
2I0
2I1
GND
2Y
VCC
4I0
4I1
4Y
3I0
3I1
3Y
E
Features
3 Micron Radiation Hardened CMOS SOS
Total Dose 200K RAD (Si)
SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/Bit-Day
(Typ)
Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
Dose Rate Upset >10
10
RAD (Si)/s, 20ns Pulse
Latch-Up Free Under Any Conditions
Military Temperature Range: -55
o
C to +125
o
C
Significant Power Reduction Compared to LSTTL ICs
DC Operating Voltage Range: 4.5V to 5.5V
Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
Input Current Levels Ii
5
A at VOL, VOH
Description
The Intersil HCS157MS is a Radiation Hardened quad 2-input
multiplexers which select four bits of data from two sources under
the control of a common select input (S). The Enable input (E
NOT) is active low. When the enable pin is high all of the outputs
(1Y-4Y) are forced low regardless of all other input conditions.
Moving data from two groups of registers to four common output
busses is a common use of these devices. The state of the Select
input determines the particular register from which the data comes.
They can also be used as function generators.
The HCS157MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of radia-
tion hardened, high-speed, CMOS/SOS Logic Family.
The HCS157MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
September 1995
Spec Number
518833
File Number
3561.1
DB NA
174
HCS157MS
Functional Block Diagram
TRUTH TABLE
ENABLE
SELECT
INPUTS
DATA INPUTS
OUTPUT
E
S
I0
I1
Y
H
X
X
X
L
L
L
L
X
L
L
L
H
X
H
L
H
X
L
L
L
H
X
H
H
H = High Level
L = Low Level
X = Immaterial
4Y
3 CIRCUITS IDENTICAL TO CIRCUIT
IN ABOVE DASHED OUTLINE
12
S
E
1
15
1Y
2Y
3Y
9
7
4
10
1I0
1I1
2I0
2I1
3I0
3I1
11
6
5
3
2
4I0
4I1
13
14
Spec Number
518833
175
Specifications HCS157MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .
10mA
DC Drain Current, Any One Output
. . . . . . . . . . . . . . . . . . . . . . .
25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
JA
JC
SBDIP Package. . . . . . . . . . . . . . . . . . . .
73
o
C/W
24
o
C/W
Ceramic Flatpack Package . . . . . . . . . . .
114
o
C/W
29
o
C/W
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/
o
C
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . . .100ns Max
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . VCC to 70% of VCC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . .0V to 30% of VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
ICC
VCC = 5.5V,
VIN = VCC or GND
1
+25
o
C
-
40
A
2, 3
+125
o
C, -55
o
C
-
750
A
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V,
(Note 2)
1
+25
o
C
7.2
-
mA
2, 3
+125
o
C, -55
o
C
6.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC - 0.4V,
VIL = 0V, (Note 2)
1
+25
o
C
-7.2
-
mA
2, 3
+125
o
C, -55
o
C
-6.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V, VIH = 3.15V,
IOL = 50
A, VIL = 1.35V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
VCC = 5.5V, VIH = 3.85V,
IOL = 50
A, VIL = 1.65V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V, VIH = 3.15V,
IOH = -50
A, VIL = 1.35V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
VCC = 5.5V, VIH = 3.85V,
IOH = -50
A, VIL = 1.65V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
+25
o
C
-
0.5
A
2, 3
+125
o
C, -55
o
C
-
5.0
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, (Note 3)
7, 8A, 8B
+25
o
C, +125
o
C, -55
o
C
-
-
-
NOTES:
1. All voltages referenced to device GND.
2. Force/Measure functions may be interchanged.
3. For functional tests, VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
Spec Number
518833
176
Specifications HCS157MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Propagation Delay
Data to Output
TPHL
VCC = 4.5V
9
+25
o
C
2
26
ns
10, 11
+125
o
C, -55
o
C
2
30
ns
TPLH
VCC = 4.5V
9
+25
o
C
2
20
ns
10, 11
+125
o
C, -55
o
C
2
24
ns
Propagation Delay
Enable to Output
TPHL
VCC = 4.5V
9
+25
o
C
2
22
ns
10, 11
+125
o
C, -55
o
C
2
25
ns
TPLH
VCC = 4.5V
9
+25
o
C
2
22
ns
10, 11
+125
o
C, -55
o
C
2
25
ns
Propagation Delay
Select to Output
TPHL
VCC = 4.5V
9
+25
o
C
2
31
ns
10, 11
+125
o
C, -55
o
C
2
37
ns
TPLH
VCC = 4.5V
9
+25
o
C
2
25
ns
10, 11
+125
o
C, -55
o
C
2
29
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Capacitance Power
Dissipation
CPD
VCC = 5.0V, VIH = 5.0V,
VIL = 0V, f = 1MHz
1
+25
o
C
-
68
pF
1
+125
o
C, -55
o
C
-
84
pF
Input Capacitance
CIN
VCC = 5.0V, VIH = 5.0V,
VIL = 0V, f = 1MHz
1
+25
o
C
-
10
pF
1
+125
o
C, -55
o
C
-
10
pF
Output Transition
Time
TTHL,
TTLH
VCC = 4.5V VIH = 4.5V,
VIL = 0V,
1
+25
o
C
-
15
ns
1
+125
o
C, -55
o
C
-
22
ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
Spec Number
518833
177
Specifications HCS157MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
200K RAD
LIMITS
UNITS
MIN
MAX
Supply Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
0.75
mA
Output Current (Sink)
IOL
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
+25
o
C
6.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
+25
o
C
-6.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V , VIH = 3.15,
VIL = 1.35V, IOL = 50
A
+25
o
C
-
0.1
V
VCC = 5.5V, VIH = 3.85,
VIL =1.65V, IOL = 50
A
+25
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V, VIH = 3.15,
VIL = 1.35V, IOH = -50
A
+25
o
C
VCC
-0.1
-
V
VCC = 5.5V, VIH = 3.85,
VIL = 1.65V, IOH = -50
A
+25
o
C
VCC
-0.1
-
V
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
5
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 3.15V, VIL = 1.35V,
(Note 3)
+25
o
C
-
-
-
Propagation Delay
Data to Output
TPHL
VCC = 4.5V
+25
o
C
2
30
ns
TPLH
VCC = 4.5V
+25
o
C
2
24
ns
Propagation Delay
Enable to Output
TPHL
VCC = 4.5V
+25
o
C
2
25
ns
TPLH
VCC = 4.5V
+25
o
C
2
25
ns
Propagation Delay
Select to Output
TPHL
VCC = 4.5V
+25
o
C
2
37
ns
TPLH
VCC = 4.5V
+25
o
C
2
29
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
3. For functional tests VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
PARAMETER
GROUP B
SUBGROUP
DELTA LIMIT
ICC
5
12
A
IOL/IOH
5
-15% of 0 Hour
Spec Number
518833