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Электронный компонент: HCS195MS

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280
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
Ordering Information
PART NUMBER
TEMPERATURE RANGE
SCREENING LEVEL
PACKAGE
HCS195DMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
16 Lead SBDIP
HCS195KMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
16 Lead Ceramic Flatpack
HCS195D/Sample
+25
o
C
Sample
16 Lead SBDIP
HCS195K/Sample
+25
o
C
Sample
16 Lead Ceramic Flatpack
HCS195HMSR
+25
o
C
Die
Die
HCS195MS
Radiation Hardened Inverting
8-Bit Parallel-Input/Serial Output Shift Register
Pinouts
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T16, LEAD FINISH C
TOP VIEW
16 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F16, LEAD FINISH C
TOP VIEW
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
MR
J
K
D0
D1
D2
GND
D3
VCC
Q1
Q2
Q3
Q3
CP
PE
Q0
MR
J
K
D0
D1
D2
GND
D3
VCC
Q1
Q2
Q3
Q3
CP
PE
Q0
2
3
4
5
6
7
8
1
16
15
14
13
12
11
10
9
Features
3 Micron Radiation Hardened CMOS SOS
Total Dose 200K RAD (Si)
SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/
Bit-Day (Typ)
Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
Latch-Up Free Under Any Conditions
Fanout (Over Temperature Range)
- Standard Outputs - 10 LSTTL Loads
Military Temperature Range: -55
o
C to +125
o
C
Significant Power Reduction Compared to LSTTL ICs
DC Operating Voltage Range: 4.5V to 5.5V
Input Logic Levels
- VIL = 0.3 VCC Max
- VIH = 0.7 VCC Min
Input Current Levels Ii
5
A at VOL, VOH
Description
The Intersil HCS195MS is a Radiation Hardened 8-Bit Paral-
lel-In/Serial-Out Shift Register with complementary serial
outputs and an asynchronous parallel load input.
The HCS195MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS195MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
September 1995
Spec Number
518760
File Number
3385.1
281
HCS195MS
Functional Diagram
TRUTH TABLE
INPUTS
OUTPUTS
MR
CP
PE
J
K
Dn
Q0
Q1
Q2
Q3
Q3
L
X
X
X
X
X
L
L
L
L
H
H
h
h
h
X
H
q0
ql
q2
q3
H
h
l
l
X
L
q0
ql
q2
q3
H
h
h
l
X
q0
q0
ql
q2
q3
H
h
l
h
X
q0
q0
ql
q2
q3
H
l
X
X
dn
d0
dl
d2
d3
d3
Dn or Qn = referenced input (or output) one set-up time prior to clock
l or h = level one set-up time prior to clock
= positive clock
D0
CL
MR
PL
DP
DS
Q
D1
D2
D3
P
N
TG
TG
P
N
Q3
Q2
Q1
Q0
Q3
PE
CP
J
K
MR
CL
MR
PL
DP
DS
Q
CL
MR
PL
DP
DS
Q
CL
MR
PL
DP
DS
Q
Spec Number
518760
282
Specifications HCS195MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .
10mA
DC Drain Current, Any One Output
. . . . . . . . . . . . . . . . . . . . . . .
25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
(All voltage reference to VSS)
Thermal Resistance
JA
JC
SBDIP Package. . . . . . . . . . . . . . . . . . . .
73
o
C/W
24
o
C/W
Ceramic Flatpack Package . . . . . . . . . . .
114
o
C/W
29
o
C/W
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/
o
C
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at VCC = 4.5V (TR, TF) . . . . . .10ns Max
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . .0V to 30% of VCC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . VCC to 70% of VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V,
VIN = VCC or GND
1
+25
o
C
-
40
A
2, 3
+125
o
C, -55
o
C
-
750
A
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V,
(Note 2)
1
+25
o
C
4.8
-
mA
2, 3
+125
o
C, -55
o
C
4.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V, (Note 2)
1
+25
o
C
-4.8
-
mA
2, 3
+125
o
C, -55
o
C
-4.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V, VIH = 3.15V,
IOL = 50
A, VIL = 1.35V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
VCC = 5.5V, VIH = 3.85V,
IOL = 50
A, VIL = 1.65V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V, VIH = 3.15V,
IOH = -50
A, VIL = 1.35V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
VCC = 5.5V, VIH = 3.85V,
IOH = -50
A, VIL = 1.65V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
+25
o
C
-
0.5
A
2, 3
+125
o
C, -55
o
C
-
5.0
A
Noise Immunity
Functional Test
FN
VCC = 4.5V,
VIH = 0.70(VCC),
VIL = 0.30(VCC), (Note 3)
7, 8A, 8B
+25
o
C, +125
o
C, -55
o
C
-
-
-
NOTES:
1. All voltages reference to device GND.
2. Force/measure functions may be interchanged.
3. For functional tests VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
Spec Number
518760
283
Specifications HCS195MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Propagation Delay
(CP - Qn)
TPHL1
VCC = 4.5V, VIH = 4.5V
VIL = 0
9
+25
o
C
2
31
ns
10, 11
+125
o
C, -55
o
C
2
37
ns
Propagation Delay
(CP - Qn)
TPLH1
VCC = 4.5V, VIH = 4.5V
VIL = 0
9
+25
o
C
2
34
ns
10, 11
+125
o
C, -55
o
C
2
42
ns
Propagation Delay
(MR - Q0-3)
TPHL2
VCC = 4.5V, VIH = 4.5V
VIL = 0
9
+25
o
C
2
32
ns
10, 11
+125
o
C, -55
o
C
2
39
ns
Propagation Delay
(MR - Q3)
TPLH2
VCC = 4.5V, VIH = 4.5V
VIL = 0
9
+25
o
C
2
32
ns
10, 11
+125
o
C, -55
o
C
2
39
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Capacitance Power
Dissipation
CPD
VCC = 5.0V, VIH = 5.0V, VIL = 0.0V,
f = 1MHz
+25
o
C
-
90
pF
+125
o
C, -55
o
C
-
120
pF
Input Capacitance
CIN
VCC = 5.0V, VIH = 5.0V, VIL = 0.0V,
f = 1MHz
+25
o
C
-
10
pF
+125
o
C, -55
o
C
-
10
pF
Output Capacitance
COUT
VCC = 5.0V, VIH = 5.0V, VIL = 0.0V,
f = 1MHz
+25
o
C
-
20
pF
+125
o
C, -55
o
C
-
20
pF
Pulse Width Time
(CP or MR)
TW
VCC = 4.5V, VIH = 4.5V, VIL = 0.0V
+25
o
C
16
-
ns
+125
o
C, -55
o
C
24
-
ns
Setup Time
TSU
VCC = 4.5V, VIH = 4.5V, VIL = 0.0V
+25
o
C
20
-
ns
+125
o
C, -55
o
C
20
-
ns
Hold Time
TH
VCC = 4.5V, VIH = 4.5V, VIL = 0.0V
+25
o
C
3
-
ns
+125
o
C, -55
o
C
3
-
ns
MR to CP Removal
Time
TREM
VCC = 4.5V, VIH = 4.5V, VIL = 0.0V
+25
o
C
16
-
ns
+125
o
C, -55
o
C
24
-
ns
Recovery Time
PL to CP
TREC
VCC = 4.5V, VIH = 4.5V, VIL = 0.0V
+25
o
C
20
-
ns
+125
o
C, -55
o
C
30
-
ns
Maximum Clock
Frequency
FMAX
VCC = 4.5V, VIH = 4.5V, VIL = 0.0V
+25
o
C
30
-
MHz
+125
o
C, -55
o
C
20
-
MHz
Output Transition Time
TTHL
TTLH
VCC = 4.5V, VIH = 4.5V, VIL = 0.0V
+25
o
C
1
15
ns
+125
o
C, -55
o
C
1
22
ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
Spec Number
518760
284
Specifications HCS195MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
200K RAD
LIMITS
UNITS
MIN
MAX
Supply Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
0.75
mA
Output Current (Sink)
IOL
VCC = VIH = 4.5V, VOUT = 0.4V, VIL = 0
+25
o
C
4.0
-
mA
Output Current
(Source)
IOH
VCC = VIH = 4.5V,
VOUT = VCC - 0.4V, VIL = 0
+25
o
C
-4.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V and 5.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), IOL = 50
A
+25
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V and 5.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), IOH = -50
A
+25
o
C
VCC
-0.1
-
V
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
5
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), (Note 3)
+25
o
C
-
-
-
Propagation Delay
(CP - Qn)
TPHL1
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
37
ns
Propagation Delay
(CP - Qn)
TPLH1
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
42
ns
Propagation Delay
(MR - Q0-3)
TPHL2
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
39
ns
Propagation Delay
(MR - Q3)
TPLH2
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
39
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
3. For functional tests VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
PARAMETER
GROUP B
SUBGROUP
DELTA LIMIT
ICC
5
12
A
IOL/IOH
5
-15% of 0 Hour
Spec Number
518760