302
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
Ordering Information
PART NUMBER
TEMPERATURE RANGE
SCREENING LEVEL
PACKAGE
HCS241DMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
20 Lead SBDIP
HCS241KMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
20 Lead Ceramic Flatpack
HCS241D/Sample
+25
o
C
Sample
20 Lead SBDIP
HCS241K/Sample
+25
o
C
Sample
20 Lead Ceramic Flatpack
HCS241HMSR
+25
o
C
Die
Die
HCS241MS
Radiation Hardened Inverting
Octal Three-State Buffer/Line Driver
Pinouts
20 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T20, LEAD FINISH C
TOP VIEW
20 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F20, LEAD FINISH C
TOP VIEW
11
12
13
14
15
16
17
18
20
19
10
9
8
7
6
5
4
3
2
1
AE
AI1
BO4
AI2
BO3
AI3
AI4
BO2
BO1
GND
VCC
AO1
BI4
AO2
BE
BI3
AO3
BI2
AO4
BI1
2
3
4
5
6
7
8
1
20
19
18
17
16
15
14
13
9
10
12
11
AE
AI1
BO4
AI2
BO3
AI3
AI4
BO2
BO1
GND
VCC
AO1
BI4
AO2
BE
BI3
AO3
BI2
AO4
BI1
Features
3 Micron Radiation Hardened SOS CMOS
Total Dose 200K RAD (Si)
SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/
Bit-Day (Typ)
Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
Dose Rate Upset >10
10
RAD (Si)/Sec. 20ns Pulse
Latch Up Free Under Any Conditions
Military Temperature Range: -55
o
C to +125
o
C
Significant Power Reduction Compared to LSTTL ICs
DC Operating Voltage Range: 4.5V to 5.5V
Input Logic Levels
- VIL = 30% VCC Max
- VIH = 70% VCC Min
Input Compatibility Levels Ii
5
A at VOL, VOH
Description
The Intersil HCS241MS is a Radiation Hardened inverting
octal three-state buffer/line driver with two output enables,
one active low, and one active high.
The HCS241MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS241MS is supplied in a 20 lead ceramic flatpack
(K suffix) or a SBDIP package (D suffix).
September 1995
Spec Number
518838
File Number
3122.1
303
HCS241MS
Functional Diagram
TRUTH TABLE
INPUTS
OUTPUT
INPUTS
OUTPUT
AE
AIn
AOn
BE
BIn
BOn
L
L
L
L
X
Z
L
H
H
H
L
L
H
X
Z
H
H
H
H = High Voltage Level
L = Low Voltage Level
X = Immaterial
Z = High Impedance
N
P
N
P
N
P
N
P
P
N
P
N
P
N
P
N
19
3
5
7
9
12
14
16
18
1
2
4
6
8
11
13
15
17
AO1
AO2
AO3
AO4
BO1
BO2
BO3
BO4
AI1
AI2
AI3
AI4
BI1
BI2
BI3
BI4
BE
AE
Spec Number
518838
304
Specifications HCS241MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .
10mA
DC Drain Current, Any One Output
. . . . . . . . . . . . . . . . . . . . . . .
35mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10 sec) . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
JA
JC
SBDIP Package. . . . . . . . . . . . . . . . . . . .
72
o
C/W
24
o
C/W
Ceramic Flatpack Package . . . . . . . . . . .
107
o
C/W
28
o
C/W
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.69W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.47W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.9mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 9.3mW/
o
C
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Gates
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . 100ns/V Max
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . VCC to 70% of VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
ICC
VCC = 5.5V,
VIN = VCC or GND
1
+25
o
C
-
40
A
2, 3
+125
o
C, -55
o
C
-
750
Output Current (Sink)
IOL
VCC = VIH = 4.5V,
VOUT = 0.4V,
VIL = 0 (Note 2)
1
+25
o
C
7.2
-
mA
2, 3
+125
o
C, -55
o
C
6.0
-
Output Current
(Source)
IOH
VCC = VIH = 4.5V,
VOUT = VCC - 0.4V,
VIL = 0 (Note 2)
1
+25
o
C
-7.2
-
mA
2, 3
+125
o
C, -55
o
C
-6.0
-
Output Voltage Low
VOL
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOL = 50
A
1, 2, 3
+25
o
C, +125
o
C,
-55
o
C
-
0.1
V
VCC = 5.5V, VIH = 3.85V,
VIL = 1.65V, IOL = 50
A
1, 2, 3
+25
o
C, +125
o
C,
-55
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOH = -50
A
1, 2, 3
+25
o
C, +125
o
C,
-55
o
C
VCC-
0.1
-
V
VCC = 5.5V, VIH = 3.85V,
VIL = 1.35V, IOH = -50
A
1, 2, 3
+25
o
C, +125
o
C,
-55
o
C
VCC-
0.1
-
V
Input Leakage
Current
IIN
VCC = 5.5V
VIN = VCC or GND
1
+25
o
C
-
0.5
A
2, 3
+125
o
C, -55
o
C
-
5.0
Three-State Output
Leakage Current
IOZ
VCC = 5.5V, Force
Voltage = 0V or VCC
1
+25
o
C
-
1.0
A
2, 3
+125
o
C, -55
o
C
-
50
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V (Note 3)
7, 8A, 8B
+25
o
C, +125
o
C,
-55
o
C
-
-
-
NOTES:
1. All voltages referenced to device GND.
2. Force/Measure function may be interchanged.
3. For functional tests, VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
Spec Number
518838
305
Specifications HCS241MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Propagation Delay
TPLH1
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
+25
o
C
2
21
ns
10, 11
+125
o
C, -55
o
C
2
25
Propagation Delay
TPHL1
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
+25
o
C
2
21
ns
10, 11
+125
o
C, -55
o
C
2
25
Propagation Delay
TPZL1
TPZL2
VCC = 4.5V, VIH = 4.5V,
VIL = 0
9
+25
o
C
2
25
ns
10, 11
+125
o
C, -55
o
C
2
30
Propagation Delay
TPLZ1
TPLZ2
VCC = 4.5V, VIH = 4.5V,
VIL = 0
9
+25
o
C
2
25
ns
10, 11
+125
o
C, -55
o
C
2
30
Propagation Delay
TPZH1
TPZH2
VCC = 4.5V, VIH = 4.5V,
VIL = 0
9
+25
o
C
2
20
ns
10, 11
+125
o
C, -55
o
C
2
24
Propagation Delay
TPHZ1
TPHZ2
VCC = 4.5V, VIH = 4.5V,
VIL = 0
9
+25
o
C
2
25
ns
10, 11
+125
o
C, -55
o
C
2
30
NOTES:
1. All voltage referenced to GND.
2. Measurements made with CL = 50pF, RL = 500
, Input TR = TF = 3ns
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTE
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Capacitance Power
Dissipation
CPD
VCC = 5V, VIH = 5V,
VIL = 0V, f = 1MHz
1
+25
o
C
-
36
pF
1
+125
o
C, -55
o
C
-
59
pF
Input Capacitance
CIN
VCC = 5V, VIH = 5V,
VIL = 0V, f = 1MHz
1
+25
o
C
-
10
pF
1
+125
o
C, -55
o
C
-
10
pF
Output Capacitance
COUT
VCC = 5V, VIH = 5V,
VIL = 0V, f = 1MHz
1
+25
o
C
-
20
pF
1
+125
o
C, -55
o
C
-
20
pF
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested.
These parameters are characterized upon initial design release and upon design changes which would affect these characteristics.
Spec Number
518838
306
Specifications HCS241MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
200K RAD
LIMITS
UNITS
MIN
MAX
Supply Current
ICC
VIN = 5.5V, VIN = VCC or GND
+25
o
C
-
0.75
mA
Output Current (Sink)
IOL
VCC = VIH = 4.5V, VOUT = 0.4V, VIL = 0
+25
o
C
6
-
mA
Output Current (Source)
IOH
VCC = VIH = 4.5V,
VOUT = VCC - 0.4V, VIL = 0
+25
o
C
-6
-
mA
Output Voltage Low
VOL
VCC = 4.5V, VIH = 3.15V, VIL = 1.35V,
IOL = 50
A
+25
o
C
-
0.1
V
VCC = 5.5V, VIH = 3.85V, VIL = 1.65V,
IOL = 50
A
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V, VIH = 3.15V, VIL = 1.35V,
IOH = -50
A
+25
o
C
VCC-
0.1
-
V
VCC = 5.5V, VIH = 3.85V, VIL = 1.65V,
IOH = -50
A
VCC-
0.1
-
V
Three-State Output
Leakage Current
IOZ
VCC = 5.5V, Force Voltage = 0V or VCC
+25
o
C
-
50
A
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
5
A
Noise Immunity
Functional
FN
VCC = 4.5V, VIL = 3.15V, VIH = 1.35V, (Note 2)
+25
o
C
-
-
-
Propagation Delay
TPLH1
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
25
ns
TPHL1
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
25
ns
TPZL1
TPZL2
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
30
ns
TPLZ1
TPLZ2
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
30
ns
TPZH1
TPZH2
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
24
ns
TPHZ1
TPHZ2
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
30
ns
NOTES:
1. All voltages referenced to device GND.
2. For functional tests, VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
PARAMETER
GROUP B
SUBGROUP
DELTA LIMIT
ICC
5
+12
A
IOL/IOH
5
-15% of 0 Hour
IOZ
5
200nA
Spec Number
518838
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