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Электронный компонент: HCS253D

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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
HCS253MS
Radiation Hardened
Dual 4-Input Multiplexer
Pinouts
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T16, LEAD FINISH C
TOP VIEW
16 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F16, LEAD FINISH C
TOP VIEW
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
S1
I3 1
I2 1
I1 1
I0 1
GND
Y 1
S0
2 I3
2 I2
2 I1
2 I0
2 OE
OE 1
VCC
2 Y
2
3
4
5
6
7
8
1
16
15
14
13
12
11
10
9
S1
I3 1
I2 1
I1 1
I0 1
GND
Y 1
OE 1
S0
2 I3
2 I2
2 I1
2 I0
2 OE
VCC
2 Y
Features
3 Micron Radiation Hardened SOS CMOS
Total Dose 200K RAD (Si)
SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/Bit-
Day (Typ)
Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
Latch-Up Free Under Any Conditions
Fanout (Over Temperature Range)
- Bus Driver Outputs - 15 LSTTL Loads
Military Temperature Range: -55
o
C to +125
o
C
Significant Power Reduction Compared to LSTTL ICs
DC Operating Voltage Range: 4.5V to 5.5V
Input Logic Levels
- VIL = 0.3 VCC Max
- VIH = 0.7 VCC Min
Input Current Levels Ii
5
A at VOL, VOH
Description
The Intersil HCS253MS is a Radiation Hardened 4-to-1 line
selector multiplexer having three-state outputs. One of four
sources for each section is selected by the common select inputs
S0 and S1. When the output enable (1OE or 2OE) is HIGH, the
output is in the high impedance state.
The HCS253MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS253MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
September 1995
Spec Number
518765
File Number
3068.1
Ordering Information
PART NUMBER
TEMPERATURE RANGE
SCREENING LEVEL
PACKAGE
HCS253DMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
16 Lead SBDIP
HCS253KMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
16 Lead Ceramic Flatpack
HCS253D/Sample
+25
o
C
Sample
16 Lead SBDIP
HCS253K/Sample
+25
o
C
Sample
16 Lead Ceramic Flatpack
HCS253HMSR
+25
o
C
Die
Die
2
HCS253MS
Functional Diagram
TRUTH TABLE
SELECT INPUTS
DATA INPUTS
OUTPUT
ENABLE
OUTPUT
S1
S0
I0
I1
I2
I3
OE
Y
X
X
X
X
X
X
H
Z
L
L
L
X
X
X
L
L
L
L
H
X
X
X
L
H
L
H
X
L
X
X
L
L
L
H
X
H
X
X
L
H
H
L
X
X
L
X
L
L
H
L
X
X
H
X
L
H
H
H
X
X
X
L
L
L
H
H
X
X
X
H
L
H
Select inputs S0 and S1 are common to both sections
H = High Level, L = Low Level, X = Immaterial, Z = High Impedance (Off)
2Y
9
S0
S1
10E
1I0
1I1
1I2
1I3
2I0
2I1
2I2
2I3
20E
VCC
15
GND
13
12
11
10
14
2
6
5
4
3
1
p
n
20E
20E
16
8
20E
20E
1Y
7
n
p
10E
10E
10E
10E
Spec Number
518765
3
Specifications HCS253MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .
10mA
DC Drain Current, Any One Output
. . . . . . . . . . . . . . . . . . . . . . .
25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
JA
JC
SBDIP Package. . . . . . . . . . . . . . . . . . . .
73
o
C/W
24
o
C/W
Ceramic Flatpack Package . . . . . . . . . . .
114
o
C/W
29
o
C/W
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/
o
C
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . . .500ns Max
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . 70% of VCC to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V,
VIN = VCC or GND
1
+25
o
C
-
40
A
2, 3
+125
o
C, -55
o
C
-
750
A
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
1
+25
o
C
7.2
-
mA
2, 3
+125
o
C, -55
o
C
6.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
1
+25
o
C
-7.2
-
mA
2, 3
+125
o
C, -55
o
C
-6.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V, VIH = 3.15V,
IOL = 50
A, VIL = 1.35V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
VCC = 5.5V, VIH = 3.85V,
IOL = 50
A, VIL = 1.65V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V, VIH = 3.15V,
IOH = -50
A, VIL = 1.35V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
VCC = 5.5V, VIH = 3.85V,
IOH = -50
A, VIL = 1.65V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
+25
o
C
-
0.5
A
2, 3
+125
o
C, -55
o
C
-
5.0
A
Three-State Output
Leakage Current
IOZ
VCC = 5.5V, Applied
Voltage = 0V or VCC
1
+25
o
C
-
1.0
A
2, 3
+125
o
C, -55
o
C
-
50
A
Noise Immunity
Functional Test
FN
VCC = 4.5V,
VIH = 0.7 (VCC),
VIL = 0.3 (VCC) (Note 2)
7, 8A, 8B
+25
o
C, +125
o
C, -55
o
C
-
-
-
NOTES:
1. All voltages reference to device GND.
2. For functional tests, VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
Spec Number
518765
4
Specifications HCS253MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Select to Output
TPHL
TPLH
VCC = 4.5V
9
+25
o
C
2
26
ns
10, 11
+125
o
C, -55
o
C
2
31
ns
Data to Output
TPHL
VCC = 4.5V
9
+25
o
C
2
19
ns
10, 11
+125
o
C, -55
o
C
2
22
ns
TPLH
VCC = 4.5V
9
+25
o
C
2
21
ns
10, 11
+125
o
C, -55
o
C
2
24
ns
Enable to Output
TPZH
VCC = 4.5V
9
+25
o
C
2
17
ns
10, 11
+125
o
C, -55
o
C
2
20
ns
TPZL
VCC = 4.5V
9
+25
o
C
2
15
ns
10, 11
+125
o
C, -55
o
C
2
17
ns
Disable to Output
TPHZ
VCC = 4.5V
9
+25
o
C
2
18
ns
10, 11
+125
o
C, -55
o
C
2
19
ns
TPLZ
VCC = 4.5V
9
+25
o
C
2
16
ns
10, 11
+125
o
C, -55
o
C
2
17
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Capacitance Power Dissipation
CPD
VCC = 5.0V, f = 1MHz
+25
o
C
-
45
pF
+125
o
C, -55
o
C
-
56
pF
Input Capacitance
CIN
VCC = 5.0V, f = 1MHz
+25
o
C
-
10
pF
+125
o
C, -55
o
C
-
10
pF
Output Transition Time
TTHL
TTLH
VCC = 4.5V
+25
o
C
-
12
ns
+125
o
C, -55
o
C
-
18
ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics..
Spec Number
518765
5
Specifications HCS253MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
200K RAD
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
0.75
mA
Output Current (Sink)
IOL
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
+25
o
C
6.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
+25
o
C
-6.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V and 5.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), IOL = 50
A
+25
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V and 5.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), IOH = -50
A
+25
o
C
VCC
-0.1
-
V
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
5
A
Three-State Output
Leakage Current
IOZ
Applied Voltage = 0V or VCC,
VCC = 5.5V
+25
o
C
-
50
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), (Note 3)
+25
o
C
-
-
-
Select to Output
TPHL
VCC = 4.5V
+25
o
C
2
31
ns
TPLH
VCC = 4.5V
+25
o
C
2
31
ns
Data to Output
TPHL
VCC = 4.5V
+25
o
C
2
22
ns
TPLH
VCC = 4.5V
+25
o
C
2
24
ns
Enable to Output
TPZL
VCC = 4.5V
+25
o
C
2
17
ns
TPZH
VCC = 4.5V
+25
o
C
2
20
ns
Disable to Output
TPHZ
VCC = 4.5V
+25
o
C
2
19
ns
TPLZ
VCC = 4.5V
+25
o
C
2
17
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC
3. For functional tests VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
PARAMETER
GROUP B
SUBGROUP
DELTA LIMIT
ICC
5
12
A
IOL/IOH
5
-15% of 0 Hour
IOZL/IOZH
5
200nA
Spec Number
518765