358
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
Ordering Information
PART NUMBER
TEMPERATURE RANGE
SCREENING LEVEL
PACKAGE
HCS374DMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
20 Lead SBDIP
HCS374KMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
20 Lead Ceramic Flatpack
HCS374D/Sample
+25
o
C
Sample
20 Lead SBDIP
HCS374K/Sample
+25
o
C
Sample
20 Lead Ceramic Flatpack
HCS374HMSR
+25
o
C
Die
Die
HCS374MS
Radiation Hardened Octal D-Type
Flip-Flop, Three-State, Positive Edge Triggered
Pinouts
20 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T20
TOP VIEW
20 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F20
TOP VIEW
11
12
13
14
15
16
17
18
20
19
10
9
8
7
6
5
4
3
2
1
OE
Q0
D0
D1
Q1
Q2
D3
D2
Q3
GND
VCC
D7
D6
Q6
Q7
Q5
D5
D4
Q4
CP
2
3
4
5
6
7
8
1
20
19
18
17
16
15
14
13
OE
Q0
D0
D1
Q1
Q2
D2
D3
9
10
12
11
Q3
GND
VCC
Q7
D7
D6
Q6
Q5
D5
D4
Q4
CP
Features
3 Micron Radiation Hardened SOS CMOS
Total Dose 200K RAD (Si)
SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/Bit-
Day (Typ)
Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
Latch-Up Free Under Any Conditions
Fanout (Over Temperature Range)
- Bus Driver Outputs - 15 LSTTL Loads
Military Temperature Range: -55
o
C to +125
o
C
Significant Power Reduction Compared to LSTTL ICs
DC Operating Voltage Range: 4.5V to 5.5V
Input Logic Levels
- VIL = 0.3 VCC Max
- VIH = 0.7 VCC Min
Input Current Levels Ii
5
A at VOL, VOH
Description
The Intersil HCS374MS is a Radiation Hardened non-inverting
octal D-type, positive edge triggered flip-flop with three-stateable
outputs. The HCS374MS utilizes advanced CMOS/SOS technol-
ogy. The eight flip-flops enter data into their registers on the
LOW-to-HIGH transition of the clock (CP). Data is also
transferred to the outputs during this transition. The output
enable (OE) controls the three-state outputs and is independent
of the register operation. When the output enable is high, the out-
puts are in the high impedance state.
The HCS374MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS374MS is supplied in a 20 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
September 1995
Spec Number
518770
File Number
2470.2
DB NA
359
HCS374MS
Functional Diagram
TRUTH TABLE
INPUTS
OUTPUTS
OE
CP
Dn
Qn
L
H
H
L
L
L
L
L
X
Q0
H
X
X
Z
H =High Level (Steady State)
L =Low Level (Steady State)
X =Immaterial
Z =High Impedance
= Transition from Low to High Level
Q0 =The level of Q before the indicated input conditions were established
D
Q
CP
D
CP
Q
OE
FF
COMMON CONTROLS
OE
1 OF 8
(3, 4, 7, 8, 13, 14, 17, 18)
11
1
(2, 5, 6, 9, 12, 15, 16, 19)
Spec Number
518770
360
Specifications HCS374MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .
10mA
DC Drain Current, Any One Output
. . . . . . . . . . . . . . . . . . . . . . .
25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
JA
JC
SBDIP Package. . . . . . . . . . . . . . . . . . . .
72
o
C/W
24
o
C/W
Ceramic Flatpack Package . . . . . . . . . . .
107
o
C/W
28
o
C/W
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.69W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.47W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.9mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 9.3mW/
o
C
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . . 500ns Max.
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . 70% of VCC to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V,
VIN = VCC or GND
1
+25
o
C
-
40
A
2, 3
+125
o
C, -55
o
C
-
750
A
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
1
+25
o
C
7.2
-
mA
2, 3
+125
o
C, -55
o
C
6.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
1
+25
o
C
-7.2
-
mA
2, 3
+125
o
C, -55
o
C
-6.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V, VIH = 3.15V,
IOL = 50
A, VIL = 1.35V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
VCC = 5.5V, VIH = 3.85V,
IOL = 50
A, VIL = 1.65V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V, VIH = 3.15V,
IOH = -50
A, VIL = 1.35V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
VCC = 5.5V, VIH = 3.85V,
IOH = -50
A, VIL = 1.65V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
+25
o
C
-
0.5
A
2, 3
+125
o
C, -55
o
C
-
5.0
A
Three-State Output
Leakage Current
IOZ
Applied Voltage = 0V or
VCC, VCC = 5.5V
1
+25
o
C
-
1
A
2, 3
+125
o
C, -55
o
C
-
50
A
Noise Immunity
Functional Test
FN
VCC = 4.5V,
VIH = 0.70(VCC),
VIL = 0.30(VCC), (Note 2)
7, 8A, 8B
+25
o
C, +125
o
C, -55
o
C
-
-
-
NOTES:
1. All voltages reference to device GND.
2. For functional tests VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
Spec Number
518770
361
Specifications HCS374MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Clock to Q
TPLH,
TPHL
VCC = 4.5V
9
+25
o
C
2
22
ns
10, 11
+125
o
C, -55
o
C
2
26
ns
Enable to Output
TPZL,
TPZH
VCC = 4.5V
9
+25
o
C
2
20
ns
10, 11
+125
o
C, -55
o
C
2
23
ns
Disable to Output
TPLZ
VCC = 4.5V
9
+25
o
C
2
20
ns
10, 11
+125
o
C, -55
o
C
2
23
ns
TPHZ
VCC = 4.5V
9
+25
o
C
2
18
ns
10, 11
+125
o
C, -55
o
C
2
20
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Capacitance Power Dissipation
CPD
VCC = 5.0V, f = 1MHz
+25
o
C
-
11
pF
+125
o
C, -55
o
C
-
35
pF
Input Capacitance
CIN
VCC = 5.0V, f = 1MHz
+25
o
C
-
10
pF
+125
o
C
-
10
pF
Output Transition Time
TTHL
TTLH
VCC = 4.5V
+25
o
C
-
12
ns
+125
o
C, -55
o
C
-
18
ns
Max Operating Frequency
FMAX
VCC = 4.5V
+25
o
C
-
30
MHz
+125
o
C, -55
o
C
-
20
MHz
Setup Time Data to Clock
TSU
VCC = 4.5V
+25
o
C
12
-
ns
+125
o
C, -55
o
C
18
-
ns
Hold Time Data to Clock
TH
VCC = 4.5V
+25
o
C
5
-
ns
+125
o
C, -55
o
C
5
-
ns
Pulse Width Clock
TW
VCC = 4.5V
+25
o
C
16
-
ns
+125
o
C, -55
o
C
24
-
ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
Spec Number
518770
362
Specifications HCS374MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
200K RAD
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
0.75
mA
Output Current (Sink)
IOL
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
+25
o
C
6.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
+25
o
C
-6.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V and 5.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), IOL = 50
A
+25
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V and 5.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), IOH = -50
A
+25
o
C
VCC
-0.1
-
V
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
5
A
Three-State Output
Leakage Current
IOZ
Applied Voltage = 0V or VCC, VCC = 5.5V
+25
o
C
-
50
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 0.70(VCC),
VIL =0.30(VCC), (Note 3)
+25
o
C
-
-
-
Clock to Q
TPLH,
TPHL
VCC = 4.5V
+25
o
C
2
26
ns
Enable to Output
TPZL,
TPZH
VCC = 4.5V
+25
o
C
2
23
Disable to Output
TPLZ
VCC = 4.5V
+25
o
C
2
23
ns
TPHZ
VCC = 4.5V
+25
o
C
2
20
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC
3. For functional tests VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
PARAMETER
GROUP B
SUBGROUP
DELTA LIMIT
ICC
5
12
A
IOL/IOH
5
-15% of 0 Hour
IOZL/IOZH
5
200nA
Spec Number
518770
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