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Электронный компонент: HCTS245KMSR

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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
Ordering Information
PART NUMBER
TEMPERATURE RANGE
SCREENING LEVEL
PACKAGE
HCTS245DMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
20 Lead SBDIP
HCTS245KMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
20 Lead Ceramic Flatpack
HCTS245D/Sample
+25
o
C
Sample
20 Lead SBDIP
HCTS245K/Sample
+25
o
C
Sample
20 Lead Ceramic Flatpack
HCTS245HMSR
+25
o
C
Die
Die
HCTS245MS
Radiation Hardened
Octal Bus Transceiver, Three-State, Non-Inverting
Pinouts
20 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T20
TOP VIEW
20 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F20
TOP VIEW
11
12
13
14
15
16
17
18
20
19
10
9
8
7
6
5
4
3
2
1
DIR
A0
A1
A2
A3
A4
A6
A5
A7
GND
VCC
B0
B1
B2
OE
B3
B4
B5
B6
B7
2
3
4
5
6
7
8
1
20
19
18
17
16
15
14
13
9
10
12
11
DIR
A0
A1
A2
A3
A4
A6
A5
A7
GND
VCC
B0
B1
B2
OE
B3
B4
B5
B6
B7
Features
3 Micron Radiation Hardened CMOS SOS
Total Dose 200K RAD (Si)
SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/
Bit-Day (Typ)
Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
Latch-Up Free Under Any Conditions
Fanout (Over Temperature Range)
- Bus Driver Outputs - 15 LSTTL Loads
Military Temperature Range: -55
o
C to +125
o
C
Significant Power Reduction Compared to LSTTL ICs
DC Operating Voltage Range: 4.5V to 5.5V
LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
Input Current Levels Ii
5
A at VOL, VOH
Description
The Intersil HCTS245MS is a Radiation Hardened Non-
Inverting Octal Bidirectional Bus Transceiver, Three-State,
intended for two-way asynchronous communication between
data busses. The HCTS245MS allows data transmission
from the A bus to the B bus or from the B bus to the A bus.
The logic level at the direction input (DIR) determines the
data direction. The output enable input (OE) puts the I/O port
in the high-impedance state when high.
The HCTS245MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCTS245MS is supplied in a 20 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
September 1995
Spec Number
518615
File Number
2360.2
DB NA
615
HCTS245MS
Functional Diagram
TRUTH TABLE
CONTROL
INPUTS
OPERATION
OE
DIR
L
L
B Data to A Bus
L
H
A Data to B Bus
H
X
Isolation
H = High Voltage Level, L = Low Voltage Level,
X = Immaterial
To prevent excess currents in the High-Z (Isolation) modes, all I/O terminals
should be terminated with 10k
to 1M
resistors.
ONE OF 8 TRANSCEIVERS
B DATA
(18, 17, 16, 15,
14, 13, 12)
DIR
OUTPUT
ENABLE
1
11
19
A DATA
9
(2, 3, 4, 5,
6, 7, 8)
TO OTHER
7 CIRCUITS
P
N
N
P
Spec Number
518615
616
Specifications HCTS245MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .
10mA
DC Drain Current, Any One Output
. . . . . . . . . . . . . . . . . . . . . . .
25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
JA
JC
SBDIP Package. . . . . . . . . . . . . . . . . . . .
72
o
C/W
24
o
C/W
Ceramic Flatpack Package . . . . . . . . . . .
107
o
C/W
28
o
C/W
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.69W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.47W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.9mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 9.3mW/
o
C
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . . .500ns Max
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V,
VIN = VCC or GND
1
+25
o
C
-
40
A
2, 3
+125
o
C, -55
o
C
-
750
A
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
1
+25
o
C
7.2
-
mA
2, 3
+125
o
C, -55
o
C
6.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
1
+25
o
C
-7.2
-
mA
2, 3
+125
o
C, -55
o
C
-6.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V, VIH = 2.25V,
IOL = 50
A, VIL = 0.8V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
VCC = 5.5V, VIH = 2.75V,
IOL = 50
A, VIL = 0.8V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V, VIH = 2.25V,
IOH = -50
A, VIL = 0.8V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
VCC = 5.5V, VIH = 2.75V,
IOH = -50
A, VIL = 0.8V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
+25
o
C
-
0.5
A
2, 3
+125
o
C, -55
o
C
-
5.0
A
Three-State Output
Leakage Current
IOZ
VCC = 5.5V, Applied
Voltage = 0V or VCC
1
+25
o
C
-
1
A
2, 3
+125
o
C, -55
o
C
-
50
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V (Note 2)
7, 8A, 8B
+25
o
C, +125
o
C, -55
o
C
-
-
-
NOTES:
1. All voltages reference to device GND.
2. For functional tests VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
Spec Number
518615
617
Specifications HCTS245MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Propagation Delay
Data to Output
TPLH
VCC = 4.5V
9
+25
o
C
2
18
ns
10, 11
+125
o
C, -55
o
C
2
21
ns
TPHL
VCC = 4.5V
9
+25
o
C
2
21
ns
10, 11
+125
o
C, -55
o
C
2
24
ns
Enable to Output
TPZL
VCC = 4.5V
9
+25
o
C
2
28
ns
10, 11
+125
o
C, -55
o
C
2
33
ns
TPZH
VCC = 4.5V
9
+25
o
C
2
26
ns
10, 11
+125
o
C, -55
o
C
2
31
ns
Disable to Output
TPLZ
TPHZ
VCC = 4.5V
9
+25
o
C
2
28
ns
10, 11
+125
o
C, -55
o
C
2
33
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Capacitance Power
Dissipation
CPD
VCC = 5.0V, f = 1MHz
1
+25
o
C
-
68
pF
1
+125
o
C, -55
o
C
-
68
pF
Input Capacitance
CIN
VCC = 5.0V, f = 1MHz
1
+25
o
C
-
10
pF
1
+125
o
C
-
10
pF
Output Transition
Time
TTHL
TTLH
VCC = 4.5V
1
+25
o
C
-
12
ns
1
+125
o
C, 55
o
C
-
18
ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
Spec Number
518615
618
Specifications HCTS245MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
200K RAD
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
0.75
mA
Output Current (Sink)
IOL
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
+25
o
C
6.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
+25
o
C
-6.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.8V, IOL = 50
A
+25
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.8V, IOH = -50
A
+25
o
C
VCC
-0.1
-
V
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
5
A
Three-State Output
Leakage Current
IOZ
Applied Voltage = 0V or VCC, VCC = 5.5V
+25
o
C
-
50
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 2.25V, VIL = 0.8V,
(Note 3)
+25
o
C
-
-
-
Propagation Delay Data
to Output
TPLH
VCC = 4.5V
+25
o
C
2
21
ns
TPHL
VCC = 4.5V
+25
o
C
2
24
Enable to Output
TPZL
VCC = 4.5V
+25
o
C
2
33
ns
TPZH
VCC = 4.5V
+25
o
C
2
31
ns
Disable to Output
TPLZ
TPHZ
VCC = 4.5V
2
33
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
3. For functional tests VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
PARAMETER
GROUP B
SUBGROUP
DELTA LIMIT
ICC
5
12
A
IOL/IOH
5
-15% of 0 Hour
IOZL/IOZH
5
200nA
Spec Number
518615