624
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
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Copyright
Intersil Corporation 1999
Pinouts
20 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T20
TOP VIEW
20 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F20
TOP VIEW
11
12
13
14
15
16
17
18
20
19
10
9
8
7
6
5
4
3
2
1
S0
OE1
OE2
I/O6
I/O4
I/O2
Q0
I/O0
MR
GND
VCC
DS7
Q7
I/O7
S1
I/O5
I/O3
I/O1
CP
DS0
2
3
4
5
6
7
8
1
20
19
18
17
16
15
14
13
S0
OE1
OE2
I/O6
I/O4
I/O2
I/O0
Q0
9
10
12
11
MR
GND
VCC
S1
DS7
Q7
I/O7
I/O5
I/O3
I/O1
CP
DS0
Ordering Information
PART NUMBER
TEMPERATURE RANGE
SCREENING LEVEL
PACKAGE
HCTS299DMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
20 Lead SBDIP
HCTS299KMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
20 Lead Ceramic Flatpack
HCTS299D/Sample
+25
o
C
Sample
20 Lead SBDIP
HCTS299K/Sample
+25
o
C
Sample
20 Lead Ceramic Flatpack
HCTS299HMSR
+25
o
C
Die
Die
HCTS299MS
Radiation Hardened
8-Bit Universal Shift Register; Three-State
Features
3 Micron Radiation Hardened CMOS SOS
Total Dose 200K RAD (Si)
SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/
Bit-Day (Typ)
Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
Latch-Up Free Under Any Conditions
Fanout (Over Temperature Range)
-Bus Driver Outputs: 15 LSTTL Loads
Military Temperature Range: -55
o
C to +125
o
C
Significant Power Reduction Compared to LSTTL ICs
DC Operating Voltage Range: 4.5V to 5.5V
LSTTL Input Compatibility
-VIL = 0.8V Max
-VIH = VCC/2 Min
Input Current Levels Ii
5
A at VOL, VOH
Description
The Intersil HCTS299MS is a Radiation Hardened 8-bit shift/
storage register with three-state bus interface capability. The
register has four synchronous operating modes controlled by
the two select inputs (S0, S1). The mode select, the serial
data (DS0, DS7) and the parallel data (IO0 - IO7) respond
only to the low to high transition of the clock (CP) pulse. S0,
S1 and the data inputs must be one set up time period prior
to the clocks positive transition. The master reset (MR) is an
asynchronous active low input.
The HCTS299MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family
with TTL input compatibility.
August 1995
Spec Number
518640
File Number
3069.1
DB NA
627
Specifications HCTS299MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . . -0.5 to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .
10mA
DC Drain Current, Any One Output
. . . . . . . . . . . . . . . . . . . . . . .
25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
JA
JC
SBDIP Package. . . . . . . . . . . . . . . . . . . .
72
o
C/W
24
o
C/W
Ceramic Flatpack Package . . . . . . . . . . .
107
o
C/W
28
o
C/W
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.69W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.47W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.9mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 9.3mW/
o
C
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . . .500ns Max
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V,
VIN = VCC or GND
1
+25
o
C
-
40
A
2, 3
+125
o
C, -55
o
C
-
750
A
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
1
+25
o
C
7.2
-
mA
2, 3
+125
o
C, -55
o
C
6.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC - 0.4V,
VIL = 0V
1
+25
o
C
-7.2
-
mA
2, 3
+125
o
C, -55
o
C
-6.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V, VIH = 2.25V,
IOL = 50
A, VIL = 0.8V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
VCC = 5.5V, VIH = 2.75V,
IOL = 50
A, VIL = 0.8V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V, VIH = 2.25V,
IOH = -50
A, VIL = 0.8V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
VCC = 5.5V, VIH = 2.75V,
IOH = -50
A, VIL = 0.8V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
+25
o
C
-
0.5
A
2, 3
+125
o
C, -55
o
C
-
5.0
A
Three-State Output
Leakage Current
IOZ
Applied Voltage = 0V or
VCC, VCC = 5.5V
1
+25
o
C
-
1
A
2, 3
+125
o
C, -55
o
C
-
50
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V (Note 2)
7, 8A, 8B
+25
o
C, +125
o
C, -55
o
C
-
-
-
NOTES:
1. All voltages referenced to device GND.
2. For functional tests, VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
Spec Number
518640
628
Specifications HCTS299MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
CLK to I/On
TPHL,
TPLH
VCC = 4.5V
9
+25
o
C
2
28
ns
10, 11
+125
o
C, -55
o
C
2
32
ns
CLK to Q0, Q7
TPHL,
TPLH
VCC = 4.5V
9
+25
o
C
2
30
ns
10, 11
+125
o
C, -55
o
C
2
34
ns
MR to Output
TPHL
VCC = 4.5V
9
+25
o
C
2
32
ns
10, 11
+125
o
C, -55
o
C
2
36
ns
OEn to Output
TPZH
VCC = 4.5V
9
+25
o
C
2
23
ns
10, 11
+125
o
C, -55
o
C
2
25
ns
TPHZ
9
+25
o
C
2
25
ns
10, 11
+125
o
C, -55
o
C
2
27
ns
TPZL
9
+25
o
C
2
30
ns
10, 11
+125
o
C, -55
o
C
2
34
ns
TPLZ
9
+25
o
C
2
30
ns
10, 11
+125
o
C, -55
o
C
2
34
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Capacitance Power
Dissipation
CPD
VCC = 5.0V, f = 1MHz
1
+25
o
C
-
147
pF
1
+125
o
C, -55
o
C
-
171
pF
Input Capacitance
CIN
VCC = 5.0V, f = 1MHz
1
+25
o
C
-
10
pF
1
+125
o
C
-
10
pF
Output Transition
Time
TTHL,
TTLH
VCC = 4.5V
1
+25
o
C
-
15
ns
1
+125
o
C, -55
o
C
-
22
ns
Max Operating
Frequency
FMAX
VCC = 4.5V
1
+25
o
C
-
25
MHz
1
+125
o
C, -55
o
C
-
16
MHz
Setup Time DS0,
DS7, I/On to CLK
TSU
VCC = 4.5V
1
+25
o
C
20
-
ns
1
+125
o
C, -55
o
C
30
-
ns
Spec Number
518640
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