662
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
HCTS390MS
Radiation Hardened
Dual Decade Ripple Counter
Pinouts
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T16
TOP VIEW
16 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F16
TOP VIEW
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
CP0N 1
MR 1
Q0 1
CP1N 1
Q1 1
Q2 1
GND
Q3 1
VCC
MR 2
Q0 2
CP1N 2
Q1 2
Q2 2
Q3 2
CP0N 2
CP0N 1
MR 1
Q0 1
CP1N 1
Q1 1
Q2 1
Q3 1
GND
2
3
4
5
6
7
8
1
16
15
14
13
12
11
10
9
VCC
CP0N 2
MR 2
Q0 2
CP1N 2
Q1 2
Q2 2
Q3 2
Features
3 Micron Radiation Hardened CMOS SOS
Total Dose 200K RAD (Si)
SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/
Bit-Day (Typ)
Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
Latch-Up Free Under Any Conditions
Military Temperature Range: -55
o
C to +125
o
C
Significant Power Reduction Compared to LSTTL ICs
DC Operating Voltage Range: 4.5V to 5.5V
LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = 2.0V Min
Input Current Levels Ii
5
A at VOL, VOH
Description
The Intersil HCTS390MS is a Radiation Hardened dual
decade ripple counter.
The HCTS390MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family .
The HCTS390MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
September 1995
Spec Number
518634
File Number
2476.2
DB NA
Ordering Information
PART NUMBER
TEMPERATURE RANGE
SCREENING LEVEL
PACKAGE
HCTS390DMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
16 Lead SBDIP
HCTS390KMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
16 Lead Ceramic Flatpack
HCTS390D/Sample
+25
o
C
Sample
16 Lead SBDIP
HCTS390K/Sample
+25
o
C
Sample
16 Lead Ceramic Flatpack
HCTS390HMSR
+25
o
C
Die
Die
663
HCTS390MS
Functional Diagram
TRUTH TABLE
INPUTS
ACTION
CP
MR
L
No Change
L
Count
H
H
All Qs Low
H = High Level
L = Low Logic Level
X = Immaterial
= Low-to-High
= High-to-Low
R
Q
6(10)
7(9)
nQ2
nQ3
R
Q
5(11)
nQ1
R
Q
R
Q
nQ0
3(13)
nMR
2(14)
nCP0
1(15)
nCP1
4(12)
Spec Number
518634
664
Specifications HCTS390MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . . -0.5 to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .
10mA
DC Drain Current, Any One Output
. . . . . . . . . . . . . . . . . . . . . . .
25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
JA
JC
SBDIP Package. . . . . . . . . . . . . . . . . . . .
73
o
C/W
24
o
C/W
Ceramic Flatpack Package . . . . . . . . . . .
114
o
C/W
29
o
C/W
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/
o
C
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Rise and Fall Time at 4.5V VCC (tr, tf) . . . . . . . . . .500ns Max
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . . . 2.0V to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V,
VIN = VCC or GND
1
+25
o
C
-
40
A
2, 3
+125
o
C, -55
o
C
-
750
A
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
(Standard Driver)
1
+25
o
C
4.8
-
mA
2, 3
+125
o
C, -55
o
C
4.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC - 0.4V,
VIL = 0V (Standard Driver)
1
+25
o
C
-4.8
-
mA
2, 3
+125
o
C, -55
o
C
-4.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V, VIH = 2.25V,
IOL = 50
A, VIL = 0.8V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
VCC = 5.5V, VIH = 2.75V,
IOL = 50
A, VIL = 0.8V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V, VIH = 2.25V,
IOH = -50
A, VIL = 0.8V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
VCC = 5.5V, VIH = 2.75V,
IOH = -50
A, VIL = 0.8V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
+25
o
C
-
0.5
A
2, 3
+125
o
C, -55
o
C
-
5.0
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 2.25V,
VIL = 0.80V (Note 2)
7, 8A, 8B
+25
o
C, +125
o
C, -55
o
C
-
-
-
NOTES:
1. All voltages referenced to device GND.
2. For functional tests, VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
Spec Number
518634
665
Specifications HCTS390MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
CP0N to Q0n
TPHL
TPLH
VCC = 4.5V
9
+25
o
C
2
22
ns
10, 11
+125
o
C, -55
o
C
2
27
ns
CP1Nn to Q1n
TPHL
TPLH
VCC = 4.5V
9
+25
o
C
2
29
ns
10, 11
+125
o
C, -55
o
C
2
35
ns
CP1Nn to Q2n
TPHL
TPLH
VCC = 4.5V
9
+25
o
C
2
34
ns
10, 11
+125
o
C, -55
o
C
2
41
ns
CP1Nn to Q3n
TPHL
TPLH
VCC = 4.5V
9
+25
o
C
2
29
ns
10, 11
+125
o
C, -55
o
C
2
35
ns
MR to QNn
TPHL
VCC = 4.5V
9
+25
o
C
2
23
ns
10, 11
+125
o
C, -55
o
C
2
29
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Capacitance Power
Dissipation
CPD
VCC = 5.0V, f = 1MHz
1, 2, 3
+25
o
C
-
50
pF
1, 2, 3
+125
o
C, -55
o
C
-
56
pF
Input Capacitance
CIN
VCC = 5.0V, f = 1MHz
1, 2, 3
+25
o
C
-
10
pF
1, 2, 3
+125
o
C
-
10
pF
Output Transition
Time
TTHL
TTLH
VCC = 4.5V
1, 2, 3
+25
o
C
-
15
ns
1, 2, 3
+125
o
C
-
22
ns
Max Operating
Frequency
FMAX
VCC = 4.5V
1, 2, 3
+25
o
C
-
27
MHz
1, 2, 3
+125
o
C, -55
o
C
-
18
MHz
Pulse Width CP0Nn,
CP1Nn
TW
VCC = 4.5V
1, 2, 3
+25
o
C
15
-
ns
1, 2, 3
+125
o
C, -55
o
C
22
-
ns
Pulse Width Reset
TW
VCC = 4.5V
1, 2, 3
+25
o
C
13
-
ns
1, 2, 3
+125
o
C, -55
o
C
20
-
ns
Removal Time
Reset
TREM
VCC = 4.5V
1, 2, 3
+25
o
C
15
-
ns
1, 2, 3
+125
o
C, -55
o
C
22
-
ns
NOTES:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
2. Applies to DIC packaged devices.
3. Applies to Flatpack packaged devices.
Spec Number
518634
666
Specifications HCTS390MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
200K RAD
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
0.75
mA
Output Current (Sink)
IOL
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
+25
o
C
4.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
+25
o
C
-4.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.80V, IOL = 50
A
+25
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.80V, IOL = -50
A
+25
o
C
VCC
-0.1
-
V
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
5
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 2.25V, VIL = 0.80V,
(Note 3)
+25
o
C
-
-
-
CP0Nn to Q0n
TPHL
TPLH
VCC = 4.5V
+25
o
C
2
27
ns
CP1Nn to Q1n
TPHL
TPLH
VCC = 4.5V
+25
o
C
2
35
ns
CP1Nn to Q2n
TPHL
TPLH
VCC = 4.5V
+25
o
C
2
41
ns
CP1Nn to Q3n
TPHL
TPLH
VCC = 4.5V
+25
o
C
2
35
ns
MR to Qn
TPHL
VCC = 4.5V
+25
o
C
2
29
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
3. For functional tests VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
PARAMETER
GROUP B
SUBGROUP
DELTA LIMIT
ICC
5
12
A
IOL/IOH
5
-15% of 0 Hour
Spec Number
518634
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