672
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
Ordering Information
PART NUMBER
TEMPERATURE RANGE
SCREENING LEVEL
PACKAGE
HCTS393DMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
14 Lead SBDIP
HCTS393KMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
14 Lead Ceramic Flatpack
HCTS393D/Sample
+25
o
C
Sample
14 Lead SBDIP
HCTS393K/Sample
+25
o
C
Sample
14 Lead Ceramic Flatpack
HCTS393HMSR
+25
o
C
Die
Die
HCTS393MS
Radiation Hardened
Dual 4-Stage Binary Counter
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T14
TOP VIEW
14 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP3-F14
TOP VIEW
CP 1
MR 1
Q0 1
Q1 1
Q2 1
Q3 1
GND
VCC
2 CP
2 MR
2 Q0
2 Q1
2 Q2
2 Q3
1
2
3
4
5
6
7
14
13
12
11
10
9
8
14
13
12
11
10
9
8
2
3
4
5
6
7
1
CP 1
MR 1
Q0 1
Q1 1
Q2 1
Q3 1
GND
VCC
2 CP
2 MR
2 Q0
2 Q1
2 Q2
2 Q3
Features
3 Micron Radiation Hardened CMOS SOS
Total Dose 200K RAD (Si)
SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/
Bit-Day (Typ)
Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
Latch-Up Free Under Any Conditions
Fanout (Over Temperature Range)
- Standard Outputs: 10 LSTTL Loads
Military Temperature Range: -55
o
C to +125
o
C
Significant Power Reduction Compared to LSTTL ICs
DC Operating Voltage Range: 4.5V to 5.5V
LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
Input Current Levels Ii
5
A at VOL, VOH
Description
The Intersil HCTS393MS is a Radiation Hardened 4-stage
riple-carry binary counter. All counter stages are master-
slave flip-flop. The state of the stage advances one count on
the negative transition of each clock pulse. A high voltage
level on the MR line resets all counters to their zero state. All
inputs and outputs are buffered.
The HCTS393MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCTS393MS is supplied in a 14 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
August 1995
Spec Number
518633
File Number
3071.1
DB NA
673
Functional Diagram
Q
R
Q
MR
CP
1(13)
2(12)
Q
R
Q
Q
R
Q
Q
R
Q
3(11)
4(10)
5(9)
6(8)
Q0
Q1
Q2
Q3
TRUTH TABLE
CP
COUNT
OUTPUTS
Q0
Q1
Q2
Q3
0
L
L
L
L
1
H
L
L
L
2
L
H
L
L
3
H
H
L
L
4
L
L
H
L
5
H
L
H
L
6
L
H
H
L
7
H
H
H
L
8
L
L
L
H
9
H
L
L
H
10
L
H
L
H
11
H
H
L
H
12
L
L
H
H
13
H
L
H
H
14
L
H
H
H
15
H
H
H
H
TRUTH TABLE
CP
MR
OUTPUT
L
No Change
L
Count
X
H
L L L L
H = High Lvel
L = Low Logic Level
X = Immaterial
= Low-to-High
= High-to-Low
HCTS393MS
Spec Number
518633
674
Specifications HCTS393MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .
10mA
DC Drain Current, Any One Output
. . . . . . . . . . . . . . . . . . . . . . .
25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
JA
JC
SBDIP Package. . . . . . . . . . . . . . . . . . . .
74
o
C/W
24
o
C/W
Ceramic Flatpack Package . . . . . . . . . . .
116
o
C/W
30
o
C/W
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.5mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.6mW/
o
C
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (tr, tf) . . . . . . . . .500ns Max
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V,
VIN = VCC or GND
1
+25
o
C
-
40
A
2, 3
+125
o
C, -55
o
C
-
750
A
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
1
+25
o
C
4.8
-
mA
2, 3
+125
o
C, -55
o
C
4.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC - 0.4V,
VIL = 0V
1
+25
o
C
-4.8
-
mA
2, 3
+125
o
C, -55
o
C
-4.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V, VIH = 2.25V,
IOL = 50
A, VIL = 0.8V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
VCC = 5.5V, VIH = 2.75V,
IOL = 50
A, VIL = 0.8V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V, VIH = 2.25V,
IOH = -50
A, VIL = 0.8V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
VCC = 5.5V, VIH = 2.75V,
IOH = -50
A, VIL = 0.8V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
+25
o
C
-
0.5
A
2, 3
+125
o
C, -55
o
C
-
5.0
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V (Note 2)
7, 8A, 8B
+25
o
C, +125
o
C, -55
o
C
-
-
-
NOTES:
1. All voltages referenced to device GND.
2. For functional tests, VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
Spec Number
518633
675
Specifications HCTS393MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
CPn to Q0
TPHL
TPLH
VCC = 4.5V
9
+25
o
C
2
29
ns
10, 11
+125
o
C, -55
o
C
2
34
ns
CPn to Q1
TPHL
TPLH
VCC = 4.5V
9
+25
o
C
2
36
ns
10, 11
+125
o
C, -55
o
C
2
43
ns
CPn to Q2
TPHL
TPLH
VCC = 4.5V
9
+25
o
C
2
43
ns
10, 11
+125
o
C, -55
o
C
2
52
ns
CPn to Q3
TPHL
TPLH
VCC = 4.5V
9
+25
o
C
2
49
ns
10, 11
+125
o
C, -55
o
C
2
59
ns
MR to Qn
TPHL
VCC = 4.5V
9
+25
o
C
2
30
ns
10, 11
+125
o
C, -55
o
C
2
34
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Capacitance Power
Dissipation
CPD
VCC = 5.0V, f = 1MHz
1
+25
o
C
-
39
pF
1
+125
o
C, -55
o
C
-
60
pF
Input Capacitance
CIN
VCC = 5.0V, f = 1MHz
1
+25
o
C
-
10
pF
1
+125
o
C
-
10
pF
Output Transition
Time
TTHL,
TTLH
VCC = 4.5V
1
+25
o
C
-
15
ns
1
+125
o
C, -55
o
C
-
22
ns
Max Operating
Frequency
FMAX
VCC = 4.5V
1
+25
o
C
-
27
MHz
1
+125
o
C, -55
o
C
-
18
MHz
Pulse Width Clock
TW
(CP)
VCC = 4.5V
1
+25
o
C
19
-
ns
1
+125
o
C, -55
o
C
29
-
ns
Pulse Width Reset
TW
(R)
VCC = 4.5V
1
+25
o
C
16
-
ns
1
+125
o
C, -55
o
C
24
-
ns
Recovery Time
Reset
TREC
VCC = 4.5V
1
+25
o
C
5
-
ns
1
+125
o
C, -55
o
C
5
-
ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
Spec Number
518633
676
Specifications HCTS393MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
200K RAD
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
0.75
mA
Output Current (Sink)
IOL
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
+25
o
C
4.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
+25
o
C
-4.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V and 5.5V,
VIH = VCC/2, VIL = 0.8V, IOL = 50
A
+25
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V and 5.5V,
VIH = VCC/2, VIL = 0.8V, IOH = -50
A
+25
o
C
VCC
-0.1
-
V
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
5
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, (Note 3)
+25
o
C
-
-
-
CPn to Q0
TPHL
TPLH
VCC = 4.5V
+25
o
C
2
34
ns
CPn to Q1
TPHL
TPLH
VCC = 4.5V
+25
o
C
2
43
ns
CPn to Q2
TPHL
TPLH
VCC = 4.5V
+25
o
C
2
52
ns
CPn to Q3
TPHL
TPLH
VCC = 4.5V
+25
o
C
2
59
ns
MR to Qn
TPHL
VCC = 4.5V
+25
o
C
2
34
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
3. For functional tests VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
PARAMETER
GROUP B
SUBGROUP
DELTA LIMIT
ICC
5
12
A
IOL/IOH
5
-15% of 0 Hour
Spec Number
518633
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