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Электронный компонент: HCTS75HMSR

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470
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
HCTS75MS
Radiation Hardened
Dual 2-Bit Bistable Transparent Latch
Pinouts
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T16, LEAD FINISH C
TOP VIEW
16 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
(FLATPACK) MIL-STD-1835 CDFP4-F16, LEAD FINISH C
TOP VIEW
Functional Diagram
TRUTH TABLE
INPUTS
OUTPUTS
D
E
Q
Q
L
H
L
H
H
H
H
L
X
L
Q0
Q0
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
Q0
D0
D1
E
VCC
D0
Q1
D1
Q0
Q1
E
GND
Q0
Q0
Q1
Q1
1
1
1
2
2
2
2
1
1
1
2
2
2
1
2
3
4
5
6
7
8
1
16
15
14
13
12
11
10
9
Q0
D0
D1
E
VCC
D0
Q1
D1
Q0
Q1
E
GND
Q0
Q0
Q1
Q1
1
1
1
2
2
2
2
1
1
1
2
2
2
1
LATCH 0
D
LE
LE
Q
LATCH 1
D
LE
LE
Q
16(10
1(11
14(8
15(9
D0
E
D1
VCC
GND
2(6)
13(4)
3(7)
5
12
Features
3 Micron Radiation Hardened SOS CMOS
Total Dose 200K RAD (Si)
SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/Bit-Day
(Typ)
Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
Latch-Up Free Under Any Conditions
Military Temperature Range: -55
o
C to +125
o
C
Significant Power Reduction Compared to LSTTL ICs
DC Operating Voltage Range: 4.5V to 5.5V
LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
Input Current Levels Ii
5
A at VOL, VOH
Description
The Intersil HCTS75MS is a Radiation Hardened dual 2-bit
bistable transparent latch. Each of the two latches are controlled
by a separate enable input (E) which are active low. E low latches
the output state.
The HCTS75MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of radia-
tion hardened, high-speed, CMOS/SOS Logic Family.
The HCTS75MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Ordering Information
PART
NUMBER
TEMPERATURE
RANGE
SCREENING
LEVEL
PACKAGE
HCTS75DMSR
-55
o
C to +125
o
C
Intersil Class
S Equivalent
16 Lead SBDIP
HCTS75KMSR
-55
o
C to +125
o
C
Intersil Class
S Equivalent
16 Lead Ceramic
Flatpack
HCTS75D/
Sample
+25
o
C
Sample
16 Lead SBDIP
HCTS75K/
Sample
+25
o
C
Sample
16 Lead Ceramic
Flatpack
HCTS75HMSR
+25
o
C
Die
Die
September 1995
Spec Number
518625
File Number
3189.1
471
Specifications HCTS75MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .
10mA
DC Drain Current, Any One Output
. . . . . . . . . . . . . . . . . . . . . . .
25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
JA
JC
SBDIP Package. . . . . . . . . . . . . . . . . . . .
73
o
C/W
24
o
C/W
Ceramic Flatpack Package . . . . . . . . . . .
114
o
C/W
29
o
C/W
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/
o
C
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at VCC = 4.5V (TR, TF) . . . 100ns/V Max
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V,
VIN = VCC or GND
1
+25
o
C
-
20
A
2, 3
+125
o
C, -55
o
C
-
400
A
Output Current
(Sink)
IOL
VCC = VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
1
+25
o
C
4.8
-
mA
2, 3
+125
o
C, -55
o
C
4.0
-
mA
Output Current
(Source)
IOH
VCC = VIH = 4.5V,
VOUT = VCC - 0.4V,
VIL = 0V
1
+25
o
C
-4.8
-
mA
2, 3
+125
o
C, -55
o
C
-4.0
-
mA
Output Voltage Low
VOL
VCC = 5.5V, VIH = 2.75V,
VIL = 0.8V, IOL = 50
A
1, 2, 3
+25
o
C, +125
o
C,
-55
o
C
-
0.1
V
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, IOL = 50
A
1, 2, 3
+25
o
C, +125
o
C,
-55
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 5.5V, VIH = 2.75V,
VIL = 0.8V, IOH = -50
A
1, 2, 3
+25
o
C, +125
o
C,
-55
o
C
VCC -0.1
-
V
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, IOH = -50
A
1, 2, 3
+25
o
C, +125
o
C,
-55
o
C
VCC -0.1
-
V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
+25
o
C
-0.5
+0.5
A
2, 3
+125
o
C, -55
o
C
-5.0
+5.0
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V (Note 2)
7, 8A, 8B
+25
o
C, +125
o
C,
-55
o
C
-
-
V
NOTES:
1. All voltages referenced to device GND.
2. For functional tests VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
Spec Number
518625
472
Specifications HCTS75MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Propagation Delay
D to Q
TPLH
VCC = 4.5V, VIH = 3.0V,
VIL = 0V
9
+25
o
C
2
19
ns
10, 11
+125
o
C, -55
o
C
2
24
ns
TPHL
VCC = 4.5V, VIH = 3.0V,
VIL = 0V
9
+25
o
C
2
27
ns
10, 11
+125
o
C, -55
o
C
2
35
ns
Propagation Delay
D to Q
TPLH
VCC = 4.5V, VIH = 3.0V,
VIL = 0V
9
+25
o
C
2
23
ns
10, 11
+125
o
C, -55
o
C
2
29
ns
TPHL
VCC = 4.5V, VIH = 3.0V,
VIL = 0V
9
+25
o
C
2
19
ns
10, 11
+125
o
C, -55
o
C
2
22
ns
Propagation Delay
E to Q
TPLH
VCC = 4.5V, VIH = 3.0V,
VIL = 0V
9
+25
o
C
2
21
ns
10, 11
+125
o
C, -55
o
C
2
25
ns
TPHL
VCC = 4.5V, VIH = 3.0V,
VIL = 0V
9
+25
o
C
2
20
ns
10, 11
+125
o
C, -55
o
C
2
23
ns
Propagation Delay
E to Q
TPLH
VCC = 4.5V, VIH = 3.0V,
VIL = 0V
9
+25
o
C
2
24
ns
10, 11
+125
o
C, -55
o
C
2
29
ns
TPHL
VCC = 4.5V, VIH = 3.0V,
VIL = 0V
9
+25
o
C
2
28
ns
10, 11
+125
o
C, -55
o
C
2
34
ns
NOTES:
1. All voltages referenced to device GND.
2. Measurements made with RL = 500
, CL = 50pF, Input TR = TF = 3ns.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Capacitance Power
Dissipation
CPD
VCC = 5.0V, f = 1MHz
1
+25
o
C
-
36
pF
1
+125
o
C, -55
o
C
-
51
pF
Input Capacitance
CIN
VCC = 5.0V, f = 1MHz
1
+25
o
C
-
10
pF
1
+125
o
C, -55
o
C
-
10
pF
Pulse Width Time
TW
VCC = 4.5V, VIH = 4.5V,
VIL = 0.0V
1
+25
o
C
-
16
ns
1
+125
o
C, -55
o
C
-
24
ns
Setup Time
TSU
VCC = 4.5V, VIH = 4.5V,
VIL = 0.0V
1
+25
o
C
-
12
ns
1
+125
o
C, -55
o
C
-
18
ns
Hold Time
TH
VCC = 4.5V, VIH = 4.5V,
VIL = 0.0V
1
+25
o
C
-
12
ns
1
+125
o
C, -55
o
C
-
18
ns
Output Transition
Time
TTHL,
TTLH
VCC = 4.5V, VIH = 4.5V,
VIL = 0.0V
1
+25
o
C
15
ns
1
+125
o
C, -55
o
C
22
ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
Spec Number
518625
473
Specifications HCTS75MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETERS
SYMBOL
(NOTE 1)
CONDITIONS
TEMPERATURE
200K RAD
LIMITS
UNITS
MIN
MAX
Supply Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
0.4
mA
Output Current
(Sink)
IOL
VCC = VIH = 4.5V, VOUT = 0.4V, VIL = 0V
+25
o
C
4.0
-
mA
Output Current
(Source)
IOH
VCC = VIH = 4.5V, VOUT = VCC - 0.4V,
VIL = 0V
+25
o
C
-4.0
-
mA
Output Voltage Low
VOL
VCC = 5.5V, VIH = 2.75V, VIL = 0.8V,
IOL = 50
A
+25
o
C
-
0.1
V
VCC = 4.5V, VIH = 2.25V, VIL = 0.8V,
IOL = 50
A
+25
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 5.5V, VIH = 2.75V, VIL = 0.8V,
IOH = -50
A
+25
o
C
VCC
-0.1
-
V
VCC = 4.5V, VIH = 2.25V, VIL = 0.8V,
IOH = -50
A
+25
o
C
VCC
-0.1
-
V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-5
+5
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 2.25V, VIL = 0.8V,
(Note 3)
+25
o
C
-
-
Propagation Delay
D to Q
TPHL
VCC = 4.5V, VIH = 3.0V, VIL = 0V
+25
o
C
2
35
ns
TPLH
VCC = 4.5V, VIH = 3.0V, VIL = 0V
+25
o
C
2
24
ns
Propagation Delay
D to Q
TPHL
VCC = 4.5V, VIH = 3.0V, VIL = 0V
+25
o
C
2
22
ns
TPLH
VCC = 4.5V, VIH = 3.0V, VIL = 0V
+25
o
C
2
29
ns
Propagation Delay
E to Q
TPHL
VCC = 4.5V, VIH = 3.0V, VIL = 0V
+25
o
C
2
23
ns
TPLH
VCC = 4.5V, VIH = 3.0V, VIL = 0V
+25
o
C
2
25
ns
Propagation Delay
E to Q
TPHL
VCC = 4.5V, VIH = 3.0V, VIL = 0V
+25
o
C
2
34
ns
TPLH
VCC = 4.5V, VIH = 3.0V, VIL = 0V
+25
o
C
2
29
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
3. For functional tests VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
TABLE 5. BURN-IN AND OPERATING LIFE DELTA PARAMETERS (+25
o
C)
PARAMETER
GROUP B
SUBGROUP
DELTA LIMIT
ICC
5
6
A
IOL/IOH
5
-15% of 0 Hour
Spec Number
518625
474
Specifications HCTS75MS
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
METHOD
GROUP A SUBGROUPS
READ AND RECORD
Initial Test (Preburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
Interim Test
I
(Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
Interim Test
II
(Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
PDA
100%/5004
1, 7, 9, Deltas
Interim Test
III
(Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
PDA
100%/5004
1, 7, 9, Deltas
Final Test
100%/5004
2, 3, 8A, 8B, 10, 11
Group A (Note 1)
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B
Subgroup B-5
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroups 1, 2, 3, 9, 10, 11,
(Note 2)
Subgroup B-6
Sample/5005
1, 7, 9
Group D
Sample/5005
1, 7, 9
NOTES:
1. Alternate group A inspection in accordance with method 5005 of MIL-STD-883 may be exercised.
2. Table 5 parameters only.
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE
GROUPS
METHOD
TEST
READ AND RECORD
PRE RAD
POST RAD
PRE RAD
POST RAD
Group E Subgroup 2
5005
1, 7, 9
Table 4
1, 9
Table 4 (Note 1)
NOTE:
1. Except FN test which will be performed 100% Go/No-Go.
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS
OPEN
GROUND
1/2 VCC = 3V
0.5V
VCC = 6V
0.5V
OSCILLATOR
50kHz
25kHz
STATIC BURN-IN I TEST CONNECTIONS (Note 1)
1, 8, 9, 10, 11, 14, 15, 16
2, 3, 4, 6, 7, 12, 13
-
5
-
-
STATIC BURN-IN II TEST CONNECTIONS (Note 1)
1, 8, 9, 10, 11, 14, 15, 16
12
-
2, 3, 4, 5, 6, 7, 13
-
-
DYNAMIC BURN-IN TEST CONNECTIONS (Note 2)
-
12
1, 8, 9, 10, 11, 14, 15, 16
5
4, 13
2, 3, 6, 7
NOTES:
1. Each pin except VCC and GND will have a resistor of 10K
5% for static burn-in
2. Each pin except VCC and GND will have a resistor of 1K
5% for dynamic burn-in
TABLE 9. IRRADIATION TEST CONNECTIONS
OPEN
GROUND
VCC = 5V
0.5V
1, 8, 9, 14, 15, 16
12
2, 3, 4, 5, 6, 7, 10, 11, 13
NOTE: Each pin except VCC and GND will have a resistor of 47K
5% for irradiation testing. Group
E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
Spec Number
518625