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Электронный компонент: HCTS85DMSR

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1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
Ordering Information
PART NUMBER
TEMPERATURE RANGE
SCREENING LEVEL
PACKAGE
HCTS85DMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
16 Lead SBDIP
HCTS85KMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
16 Lead Ceramic Flatpack
HCTS85D/Sample
+25
o
C
Sample
16 Lead SBDIP
HCTS85K/Sample
+25
o
C
Sample
16 Lead Ceramic Flatpack
HCTS85HMSR
+25
o
C
Die
Die
HCTS85MS
Radiation Hardened
4-Bit Magnitude Comparator
Pinouts
16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE
(SBDIP) MIL-STD-1835 CDIP2-T16, LEAD FINISH C
TOP VIEW
16 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
(FLATPACK) MIL-STD-1835 CDFP4-F16, LEAD FINISH C
TOP VIEW
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
B3
(A<B)IN
(A=B)IN
(A>B)IN
(A<B)OUT
(A=B)OUT
GND
(A>B)OUT
VCC
B2
A2
A1
B1
A0
B0
A3
2
3
4
5
6
7
8
1
16
15
14
13
12
11
10
9
B3
(A<B)IN
(A=B)IN
(A>B)IN
(A<B)OUT
(A=B)OUT
GND
(A>B)OUT
VCC
B2
A2
A1
B1
A0
B0
A3
Features
3 Micron Radiation Hardened SOS CMOS
Total Dose 200K RAD (Si)
SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/
Bit-Day (Typ)
Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
Latch-Up Free Under Any Conditions
Fanout (Over Temperature Range)
-Standard Outputs: 10 LSTTL Loads
Military Temperature Range: -55
o
C to +125
o
C
Significant Power Reduction Compared to LSTTL ICs
DC Operating Voltage Range: 4.5V to 5.5V
LSTTL Input Compatibility
-VIL = 0.8V Max
-VIH = VCC/2 Min
Input Current Levels Ii
5
A at VOL, VOH
Description
The Intersil HCTS85MS is a Radiation Hardened 4-bit high
speed magnitude comparator. This device compares two
binary, BCD, or other monotonic codes and presents the
three possible magnitude results at the outputs (A>B, A<B,
and A=B). The 4-bit input words are weighted (A0 to A3 and
B0 to B3), where A3 and B3 are the most significant bits.
The HCTS85MS is expandable without external gating, both
serial and parallel operation.
The HCTS85MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family
with TTL input compatibility.
The HCTS85MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
September 1995
Spec Number
518624
File Number
3059.1
2
HCTS85MS
Functional Block Diagram
TRUTH TABLE
COMPARING INPUTS
CASCADING INPUTS
OUTPUTS
A3, B3
A2, B2
A1, B1
A0, B0
A>B
A<B
A=B
A>B
A<B
A=B
A3>B3
X
X
X
X
X
X
H
L
L
A3<B3
X
X
X
X
X
X
L
H
L
A3=B3
A2>B2
X
X
X
X
X
H
L
L
A3=B3
A2<B2
X
X
X
X
X
L
H
L
A3=B3
A2=B2
A1>B1
X
X
X
X
H
L
L
A3=B3
A2=B2
A1<B1
X
X
X
X
L
H
L
A3=B3
A2=B2
A1=B1
A0>B0
X
X
X
H
L
L
A3=B3
A2=B2
A1=B1
A0<B0
X
X
X
L
H
L
A3=B3
A2=B2
A1=B1
A0=B0
H
L
L
H
L
L
A3=B3
A2=B2
A1=B1
A0=B0
L
H
L
L
H
L
A3=B3
A2=B2
A1=B1
A0=B0
L
L
H
L
L
H
A3=B3
A2=B2
A1=B1
A0=B0
X
X
H
L
L
H
A3=B3
A2=B2
A1=B1
A0=B0
H
H
L
L
L
L
A3=B3
A2=B2
A1=B1
A0=B0
L
L
L
H
H
L
NOTE: L = Logic Level Low, H = Logic Level High, x = Immaterial
B3
A3
B2
A2
B1
A1
(A>B)
B0
A0
(A=B)
(A<B)
B3
B3
A3
A3
B2
B2
A2
A2
B1
B1
A1
A1
B0
B0
A0
A0
A2
B2
A3
B3
A1
B1
B0
A0
B0
A0
(A>B)
1
15
14
13
11
12
4
9
10
3
2
IN
IN
IN
A1
B1
A3
B3
A2
B2
OUT
(A=B)
OUT
(A<B)
OUT
5
6
7
Single Device
OR
Series Cascading
Parallel Cascading
Spec Number
518624
3
Specifications HCTS85MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .
10mA
DC Drain Current, Any One Output
. . . . . . . . . . . . . . . . . . . . . . .
25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
JA
JC
SBDIP Package. . . . . . . . . . . . . . . . . . . .
73
o
C/W
24
o
C/W
Ceramic Flatpack Package . . . . . . . . . . .
114
o
C/W
29
o
C/W
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/
o
C
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Rise and Fall Times at VCC = 4.5V (TR, TF) . . . . 500ns Max.
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . . . 2.0V to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V,
VIN = VCC or GND
1
+25
o
C
-
40
A
2, 3
+125
o
C, -55
o
C
-
750
A
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
1
+25
o
C
4.8
-
mA
2, 3
+125
o
C, -55
o
C
4.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC - 0.4V,
VIL = 0V
1
+25
o
C
-4.8
-
mA
2, 3
+125
o
C, -55
o
C
-4.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V, VIH = 2.25V,
IOL = 50
A, VIL = 0.8V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
VCC = 5.5V, VIH = 2.75V,
IOL = 50
A, VIL = 0.8V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V, VIH = 2.25V,
IOH = -50
A, VIL = 0.8V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
VCC = 5.5V, VIH = 2.75V,
IOH = -50
A, VIL = 0.8V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
+25
o
C
-
0.5
A
2, 3
+125
o
C, -55
o
C
-
5.0
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V (Note 2)
7, 8A, 8B
+25
o
C, +125
o
C, -55
o
C
-
-
-
NOTES:
1. All voltages referenced to device GND.
2. For functional tests, VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
Spec Number
518624
4
Specifications HCTS85MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
An to (A>B)OUT
TPHL,
TPLH
VCC = 4.5V
9
+25
o
C
2
36
ns
10, 11
+125
o
C, -55
o
C
2
43
ns
Bn to (A>B)OUT
TPHL,
TPLH
VCC = 4.5V
9
+25
o
C
2
57
ns
10, 11
+125
o
C, -55
o
C
2
66
ns
An, Bn to (A<B)OUT
TPHL,
TPLH
VCC = 4.5V
9
+25
o
C
2
45
ns
10, 11
+125
o
C, -55
o
C
2
51
ns
An, Bn to (A=B)OUT
TPHL,
TPLH
VCC = 4.5V
9
+25
o
C
2
42
ns
10, 11
+125
o
C, -55
o
C
2
50
ns
An, Bn to (A>B)OUT
TPHL,
TPLH
VCC = 4.5V
9
+25
o
C
2
29
ns
10, 11
+125
o
C, -55
o
C
2
35
ns
(A>B)IN to
(A>B)OUT
TPHL,
TPLH
VCC = 4.5V
9
+25
o
C
2
34
ns
10, 11
+125
o
C, -55
o
C
2
39
ns
(A=B)IN to
(A=B)OUT
TPHL,
TPLH
VCC = 4.5V
9
+25
o
C
2
28
ns
10, 11
+125
o
C, -55
o
C
2
37
ns
(A<B)IN to
(A<B)OUT
TPHL,
TPLH
VCC = 4.5V
9
+25
o
C
2
35
ns
10, 11
+125
o
C, -55
o
C
2
40
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Capacitance Power
Dissipation
CPD
VCC = 5.0V, f = 1MHz
1
+25
o
C
-
39
pF
1
+125
o
C, -55
o
C
-
92
pF
Input Capacitance
CIN
VCC = 5.0V, f = 1MHz
1
+25
o
C
-
10
pF
1
+125
o
C, -55
o
C
-
10
pF
Output Transition
Time
TTHL,
TTLH
VCC = 4.5V
1
+25
o
C
-
15
ns
1
+125
o
C, -55
o
C
-
22
ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
Spec Number
518624
5
Specifications HCTS85MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
200K RAD
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
0.750
mA
Output Current (Sink)
IOL
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
+25
o
C
4.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
+25
o
C
-4.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.8V, IOL = 50
A
+25
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.8V, IOH = -50
A
+25
o
C
VCC
-0.1
-
V
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
5
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, (Note 3)
+25
o
C
-
-
-
An to (A>B)OUT
TPHL,
TPLH
VCC = 4.5V
+25
o
C
2
43
ns
Bn to (A>B)OUT
TPHL,
TPLH
VCC = 4.5V
+25
o
C
2
66
ns
An, Bn to (A<B)OUT
TPHL,
TPLH
VCC = 4.5V
+25
o
C
2
51
ns
An, Bn to (A=B)OUT
TPHL,
TPLH
VCC = 4.5V
+25
o
C
2
50
ns
(A<B)IN to (A<B)OUT
TPHL,
TPLH
VCC = 4.5V
+25
o
C
2
35
ns
(A>B)IN to (A>B)OUT
TPHL,
TPLH
VCC = 4.5V
+25
o
C
2
40
ns
(A=B)IN to (A=B)OUT
TPHL,
TPLH
VCC = 4.5V
+25
o
C
2
37
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
3. For functional tests VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
PARAMETER
GROUP B
SUBGROUP
DELTA LIMIT
ICC
5
12
A
IOL/IOH
5
-15% of 0 Hour
Spec Number
518624