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Электронный компонент: HCTS93DMSR

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480
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
Ordering Information
PART NUMBER
TEMPERATURE RANGE
SCREENING LEVEL
PACKAGE
HCTS93DMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
14 Lead SBDIP
HCTS93KMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
14 Lead Ceramic Flatpack
HCTS93D/Sample
+25
o
C
Sample
14 Lead SBDIP
HCTS93K/Sample
+25
o
C
Sample
14 Lead Ceramic Flatpack
HCTS93HMSR
+25
o
C
Die
Die
HCTS93MS
Radiation Hardened
4-Bit Binary Ripple Counter
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T14
TOP VIEW
14 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP3-F14
TOP VIEW
CP1
MR1
MR2
NC
VCC
NC
NC
CP0
NC
Q0
Q3
GND
Q1
Q2
1
2
3
4
5
6
7
14
13
12
11
10
9
8
14
13
12
11
10
9
8
2
3
4
5
6
7
1
CP1
MR1
MR2
NC
VCC
NC
NC
CP0
NC
Q0
Q3
GND
Q1
Q2
FeaturesIntersil
3 Micron Radiation Hardened SOS CMOS
Total Dose 200K RAD (Si)
SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/
Bit-Day (Typ)
Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
Latch-Up Free Under Any Conditions
Military Temperature Range: -55
o
C to +125
o
C
Significant Power Reduction Compared to LSTTL ICs
DC Operating Voltage Range: 4.5V to 5.5V
LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
Input Current Levels Ii
5
A at VOL, VOH
Description
The Intersil HCTS93MS is a Radiation Hardened 4-bit binary
ripple counter consisting of four master-slave flip-flops
internally connected to provide a divide-by-two and a divide-
by-eight section. Each section has a separate clock input.
The HCTS93MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
August 1995
Spec Number
518622
File Number
3060.1
DB NA
481
HCTS93MS
TRUTH TABLE
COUNT
OUTPUTS
Q0
Q1
Q2
Q3
0
L
L
L
L
1
H
L
L
L
2
L
H
L
L
3
H
H
L
L
4
L
L
H
L
5
H
L
H
L
6
L
H
H
L
7
H
H
H
L
8
L
L
L
H
9
H
L
L
H
10
L
H
L
H
11
H
H
L
H
12
L
L
H
H
13
H
L
H
H
14
L
H
H
H
15
H
H
H
H
Functional Diagram
2
COUNTER
8
COUNTER
CP0
MR1
MR2
CP1
14
2
3
1
VCC = 5
GND = 10
Q0
Q1
Q2
Q3
12
9
8
11
2
2
OUTPUTS
MR1
MR2
Q0
Q1
Q2
Q3
H
H
L
L
L
L
L
H
Count
H
L
Count
L
L
Count
NOTE: H = HIGH Voltage Level, L = LOW Voltage Level,
Q0 Connected to CP0
Spec Number
518622
482
Specifications HCTS93MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .
10mA
DC Drain Current, Any One Output
. . . . . . . . . . . . . . . . . . . . . . .
25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
JA
JC
SBDIP Package. . . . . . . . . . . . . . . . . . . .
74
o
C/W
24
o
C/W
Ceramic Flatpack Package . . . . . . . . . . .
116
o
C/W
30
o
C/W
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.5mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.6mW/
o
C
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Rise and Fall Times at VCC = 4.5V (TR, TF) . . . 100ns/V Max
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V,
VIN = VCC or GND
1
+25
o
C
-
20
A
2, 3
+125
o
C, -55
o
C
-
400
A
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
1
+25
o
C
4.8
-
mA
2, 3
+125
o
C, -55
o
C
4.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC - 0.4V,
VIL = 0V
1
+25
o
C
-4.8
-
mA
2, 3
+125
o
C, -55
o
C
-4.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V, VIH = 2.25V,
IOL = 50
A, VIL = 0.8V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
VCC = 5.5V, VIH = 2.75V,
IOL = 50
A, VIL = 0.8V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V, VIH = 2.25V,
IOH = -50
A, VIL = 0.8V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
VCC = 5.5V, VIH = 2.75V,
IOH = -50
A, VIL = 0.8V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
+25
o
C
-
0.5
A
2, 3
+125
o
C, -55
o
C
-
5.0
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V (Note 2)
7, 8A, 8B
+25
o
C, +125
o
C, -55
o
C
-
-
-
NOTES:
1. All voltages referenced to device GND.
2. For functional tests, VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
Spec Number
518622
483
Specifications HCTS93MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
CP0 to Q0
TPHL
VCC = 4.5V
9
+25
o
C
2
32
ns
10, 11
+125
o
C, -55
o
C
2
39
ns
TPLH
VCC = 4.5V
9
+25
o
C
2
27
ns
10, 11
+125
o
C, -55
o
C
2
33
ns
CP1 to Q1
TPHL
VCC = 4.5V
9
+25
o
C
2
32
ns
10, 11
+125
o
C, -55
o
C
2
39
ns
TPLH
VCC = 4.5V
9
+25
o
C
2
27
ns
10, 11
+125
o
C, -55
o
C
2
33
ns
CP1 to Q2
TPHL
VCC = 4.5V
9
+25
o
C
2
39
ns
10, 11
+125
o
C, -55
o
C
2
47
ns
TPLH
VCC = 4.5V
9
+25
o
C
2
32
ns
10, 11
+125
o
C, -55
o
C
2
39
ns
CP1 to Q3
TPHL
VCC = 4.5V
9
+25
o
C
2
42
ns
10, 11
+125
o
C, -55
o
C
2
51
ns
TPLH
VCC = 4.5V
9
+25
o
C
2
36
ns
10, 11
+125
o
C, -55
o
C
2
44
ns
MRn to Qn
TPHL
VCC = 4.5V
9
+25
o
C
2
33
ns
10, 11
+125
o
C, -55
o
C
2
40
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Capacitance Power
Dissipation
CPD
VCC = 5.0V, f = 1MHz
1
+25
o
C
-
39
pF
1
+125
o
C, -55
o
C
-
99
pF
Input Capacitance
CIN
VCC = 5.0V, f = 1MHz
1
+25
o
C
-
10
pF
1
+125
o
C
-
10
pF
Output Transition
Time
TTHL,
TTLH
VCC = 4.5V
1
+25
o
C
-
15
ns
1
+125
o
C, -55
o
C
-
22
ns
Max Clock
Frequency
FMAX
VCC = 4.5V, VIH = 4.5V,
VIL = 0.0V
1
+25
o
C
30
-
MHz
1
+125
o
C
20
-
MHz
Pulse Width CP0,
CP1
TW
VCC = 4.5V, VIH = 4.5V,
VIL = 0.0V
1
+25
o
C
16
-
ns
1
+125
o
C
24
-
ns
Reset Pulse Width
TW
VCC = 4.5V, VIH = 4.5V,
VIL = 0.0V
1
+25
o
C
16
-
ns
1
+125
o
C
24
-
ns
Reset Removal
Time
TREM
VCC = 4.5V, VIH = 4.5V,
VIL = 0.0V
1
+25
o
C
10
-
ns
1
+125
o
C
15
-
ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
Spec Number
518622
484
Specifications HCTS93MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
200K RAD
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
0.4
mA
Output Current (Sink)
IOL
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
+25
o
C
4.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
+25
o
C
-4.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V or 5.5V, VIH = VCC/2,
VIL = 0.8V, IOL = 50
A
+25
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V or 5.5V, VIH = VCC/2,
VIL = 0.8V, IOH = -50
A
+25
o
C
VCC
-0.1
-
V
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
5
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, (Note 3)
+25
o
C
-
-
V
CP0 to Q0
TPHL
VCC = 4.5V
+25
o
C
2
39
ns
TPLH
VCC = 4.5V
+25
o
C
2
33
ns
CP1 to Q1
TPHL
VCC = 4.5V
+25
o
C
2
39
ns
TPLH
VCC = 4.5V
+25
o
C
2
33
ns
CP1 to Q2
TPHL
VCC = 4.5V
+25
o
C
2
47
ns
TPLH
VCC = 4.5V
+25
o
C
2
39
ns
CP1 to Q3
TPHL
VCC = 4.5V
+25
o
C
2
51
ns
TPLH
VCC = 4.5V
+25
o
C
2
44
ns
MRn to Qn
TPHL
VCC = 4.5V
+25
o
C
2
40
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
3. For functional tests VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
PARAMETER
GROUP B
SUBGROUP
DELTA LIMIT
ICC
5
6
A
IOL/IOH
5
-15% of 0 Hour
Spec Number
518622