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Электронный компонент: HGT1S3N60A4DS

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1
File Number
4818
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
SABERTM is a trademark of Analogy, Inc.
HGT1S3N60A4DS, HGTP3N60A4D
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGT1S3N60A4DS and the HGTP3N60A4D are MOS
gated high voltage switching devices combining the best
features of MOSFETs and bipolar transistors. These devices
have the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25
o
C and 150
o
C. The IGBT used is the development type
TA49327. The diode used in anti-parallel is the development
type TA49369.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.
Formerly Developmental Type TA49329.
Symbol
Features
>100kHz Operation At 390V, 3A
200kHz Operation At 390V, 2.5A
600V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . . . . 70ns at T
J
= 125
o
C
Low Conduction Loss
Temperature Compensating SABERTM Model
www.intersil.com
Packaging
JEDEC TO-263AB
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGT1S3N60A4DS
TO-263AB
3N60A4D
HGTP3N60A4D
TO-220AB
3N60A4D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB in tape and reel, i.e., HGT1S3N60A4DS9A.
C
E
G
COLLECTOR
(FLANGE)
E
G
C
G
E
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
January 2000
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2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGT1S3N60A4DS
HGTP3N60A4D
UNITS
Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
600
V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C25
17
A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C110
8
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
40
A
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
30
V
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
15A at 600V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
70
W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.58
W/
o
C
Operating and Storage Junction Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
PKG
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
A, V
GE
= 0V
600
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= 600V
T
J
= 25
o
C
-
-
250
A
T
J
= 125
o
C
-
-
3.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 3A,
V
GE
= 15V
T
J
= 25
o
C
-
2.0
2.7
V
T
J
= 125
o
C
-
1.6
2.2
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
A, V
CE
= 600V
4.5
6.1
7.0
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
20V
-
-
250
nA
Switching SOA
SSOA
T
J
= 150
o
C, R
G
= 50
, V
GE
= 15V,
L = 200
H, V
CE
= 600V
15
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= 3A, V
CE
= 300V
-
8.8
-
V
On-State Gate Charge
Q
g(ON)
I
C
= 3A,
V
CE
= 300V
V
GE
= 15V
-
21
25
nC
V
GE
= 20V
-
26
32
nC
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C,
I
CE
= 3A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 50
,
L = 1mH,
Test Circuit (Figure 24)
-
6
-
ns
Current Rise Time
t
rI
-
11
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
73
-
ns
Current Fall Time
t
fI
-
47
-
ns
Turn-On Energy (Note 2)
E
ON1
-
37
-
J
Turn-On Energy (Note 2)
E
ON2
-
55
70
J
Turn-Off Energy (Note 3)
E
OFF
-
25
35
J
HGT1S3N60A4DS, HGTP3N60A4D
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3
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 125
o
C,
I
CE
= 3A,
V
CE
= 390V, V
GE
= 15V,
R
G
= 50
,
L = 1mH,
Test Circuit (Figure 24)
-
5.5
8
ns
Current Rise Time
t
rI
-
12
15
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
110
165
ns
Current Fall Time
t
fI
-
70
100
ns
Turn-On Energy (Note 2)
E
ON1
-
37
-
J
Turn-On Energy (Note 2)
E
ON2
-
90
100
J
Turn-Off Energy (Note 3)
E
OFF
-
50
80
J
Diode Forward Voltage
V
EC
I
EC
= 3A
-
2.25
-
V
Diode Reverse Recovery Time
t
rr
I
EC
= 3A, dI
EC
/dt = 200A/
s
-
29
-
ns
I
EC
= 1A, dI
EC
/dt = 200A/
s
-
19
-
ns
Thermal Resistance Junction To Case
R
JC
IGBT
-
-
1.8
o
C/W
Diode
-
-
3.5
o
C/W
NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 24.
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
CE
, DC COLLECT
OR CURRENT (A)
50
4
0
16
8
12
25
75
100
125
150
20
V
GE
= 15V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
12
0
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
4
300
400
200
100
500
600
0
16
20
8
T
J
= 150
o
C, R
G
= 50
, V
GE
= 15V, L = 200
H
HGT1S3N60A4DS, HGTP3N60A4D
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4
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified (Continued)
f
MAX
, OPERA
TING FREQ
UENCY (kHz)
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
50
300
6
2
3
600
100
5
4
200
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
R
JC
= 1.8
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
T
J
= 125
o
C, R
G
= 50
, L = 1mH, V
CE
= 390V
T
C
V
GE
15V
75
o
C
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
SC
, PEAK SHOR
T CIRCUIT CURRENT (A)
t
SC
, SHOR
T CIRCUIT WITHST
AND TIME (
s)
10
11
12
15
4
6
14
0
24
40
56
18
13
14
8
10
12
16
8
16
32
48
20
64
V
CE
= 390V, R
G
= 50
, T
J
= 125
o
C
t
SC
I
SC
0
2
3
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
4
8
4
5
16
12
20
1
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 150
o
C
PULSE DURATION = 250
s
DUTY CYCLE < 0.5%, V
GE
= 12V
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
4
8
16
12
20
0
2
3
4
1
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
s
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 125
o
C
E
ON2
, TURN-ON ENERGY LOSS (
J)
160
80
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
120
40
200
3
2
4
5
6
0
1
240
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 50
, L = 1mH, V
CE
= 390V
120
E
OFF
, TURN-OFF ENERGY LOSS (
J)
0
20
80
40
100
140
60
3
2
4
5
6
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
R
G
= 50
, L = 1mH, V
CE
= 390V
HGT1S3N60A4DS, HGTP3N60A4D
background image
5
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(ON)I
,
TURN-ON DELA
Y TIME
(ns)
0
12
16
2
1
3
4
5
6
8
4
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
R
G
= 50
, L = 1mH, V
CE
= 390V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 12V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
,
RISE TIME
(ns)
4
8
20
16
12
24
32
28
3
2
4
5
6
1
T
J
= 25
o
C OR T
J
= 125
o
C, V
GE
= 15V
R
G
= 50
, L = 1mH, V
CE
= 390V
T
J
= 25
o
C OR T
J
= 125
o
C, V
GE
= 12V
64
48
56
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(OFF)I
, TURN-OFF DELA
Y TIME
(ns)
112
80
96
72
2
1
3
4
5
6
88
104
R
G
= 50
, L = 1mH, V
CE
= 390V
V
GE
= 12V, T
J
= 25
o
C
V
GE
= 15V, T
J
= 25
o
C
V
GE
= 15V, T
J
= 125
o
C
V
GE
= 12V, T
J
= 125
o
C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
, F
ALL TIME
(ns)
48
40
64
80
56
72
88
96
2
1
3
4
5
6
T
J
= 125
o
C, V
GE
= 12V OR 15V
T
J
= 25
o
C, V
GE
= 12V OR 15V
R
G
= 50
, L = 1mH, V
CE
= 390V
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
8
12
4
6
8
10
14
V
GE
, GATE TO EMITTER VOLTAGE (V)
12
16
20
4
PULSE DURATION = 250
s
DUTY CYCLE < 0.5%, V
CE
= 10V
T
J
= 125
o
C
T
J
= -55
o
C
T
J
= 25
o
C
V
GE
, GA
TE T
O
EMITTER V
O
L
T
A
GE (V)
Q
G
, GATE CHARGE (nC)
2
14
0
4
10
6
8
12
16
4
8
12
16
24
20
28
0
V
CE
= 600V
V
CE
= 400V
V
CE
= 200V
I
G(REF)
= 1mA, R
L
= 100
, T
J
= 25
o
C
HGT1S3N60A4DS, HGTP3N60A4D