2-224
HIP6018
Advanced PWM and Dual Linear Power
Control
The HIP6018 provides the power control and protection for
three output voltages in high-performance microprocessor
and computer applications. The IC integrates a PWM
controllers, a linear regulator and a linear controller as well
as the monitoring and protection functions into a single
package. The PWM controller regulates the microprocessor
core voltage with a synchronous-rectified buck converter.
The linear controller regulates power for the GTL bus and
the linear regulator provides power for the clock driver circuit.
The HIP6018 includes an Intel-compatible, TTL 5-input
digital-to-analog converter (DAC) that adjusts the core PWM
output voltage from 2.1V
DC
to 3.5V
DC
in 0.1V increments
and from 1.8V
DC
to 2.05V
DC
in 0.05V steps. The precision
reference and voltage-mode control provide
1% static
regulation. The linear regulator uses an internal pass device
to provide 2.5V
2.5%. The linear controller drives an
external N-channel MOSFET to provide 1.5V
2.5%.
The HIP6018 monitors all the output voltages. A single
Power Good signal is issued when the core is within
10% of
the DAC setting and the other levels are above their under-
voltage levels. Additional built-in over-voltage protection for
the core output uses the lower MOSFET to prevent output
voltages above 115% of the DAC setting. The PWM over-
current function monitors the output current by using the
voltage drop across the upper MOSFET's r
DS(ON)
,
eliminating the need for a current sensing resistor.
Features
Provides 3 Regulated Voltages
- Microprocessor Core, Clock and GTL Power
Drives N-Channel MOSFETs
Operates from +3.3V, +5V and +12V Inputs
Simple Single-Loop PWM Control Design
- Voltage-Mode Control
Fast Transient Response
- High-Bandwidth Error Amplifier
- Full 0% to 100% Duty Ratios
Excellent Output Voltage Regulation
- Core PWM Output:
1% Over Temperature
- Other Outputs:
2.5% Over Temperature
TTL-compatible 5-Bit Digital-to-Analog Core Output
Voltage Selection
- Wide Range . . . . . . . . . . . . . . . . . . . 1.8V
DC
to 3.5V
DC
- 0.1V Steps . . . . . . . . . . . . . . . . . . . . 2.1V
DC
to 3.5V
DC
- 0.05V Steps . . . . . . . . . . . . . . . . . . 1.8V
DC
to 2.05V
DC
Power-Good Output Voltage Monitor
Microprocessor Core Voltage Protection Against Shorted
MOSFET
Over-Voltage and Over-Current Fault Monitors
- Does Not Require Extra Current Sensing Element,
Uses MOSFET's r
DS(ON)
Small Converter Size
- Constant Frequency Operation
- 200kHz Free-Running Oscillator; Programmable from
50kHz to over 1MHz
Applications
Full Motherboard Power Regulation for Computers
Low-Voltage Distributed Power Supplies
Pinout
HIP6018 (SOIC)
TOP VIEW
Ordering Information
PART NUMBER
TEMP. RANGE
(
o
C)
PACKAGE
PKG.
NO.
HIP6018CB
0 to 70
24 Ld SOIC
M24.3
HIP6018EVAL1
Evaluation Board
VCC
VID4
VID3
VID2
RT
FB2
VIN2
UGATE1
OCSET1
PGND
LGATE1
GND
FB3
VOUT2
PHASE1
24
23
22
21
20
19
18
17
16
15
1
2
3
4
5
6
7
8
9
10
11
12
14
13
FAULT
VID1
SS
FB1
DRIVE3
VID0
PGOOD
VSEN1
COMP1
Data Sheet
April 1998
File Number
4497.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
2-227
Absolute Maximum Ratings
Thermal Information
Supply Voltage, V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +15V
PGOOD, RT, FAULT, and GATE Voltage . GND - 0.3V to V
CC
+ 0.3V
Input, Output or I/O Voltage . . . . . . . . . . . . . . . . . . GND -0.3V to 7V
Operating Conditions
Supply Voltage, V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . +12V
10%
Ambient Temperature Range . . . . . . . . . . . . . . . . . . . . . 0
o
C to 70
o
C
Junction Temperature Range . . . . . . . . . . . . . . . . . . . . 0
o
C to 125
o
C
Thermal Resistance (Typical, Note 1)
JA
(
o
C/W)
SOIC Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
75
SOIC Package (with 3 in
2
of copper) . . . . . . . . . . .
65
Maximum Junction Temperature (Plastic Package) . . . . . . . .150
o
C
Maximum Storage Temperature Range . . . . . . . . . . -65
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300
o
C
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1.
JA
is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
Recommended Operating Conditions, Unless Otherwise Noted. Refer to Figures 1, 2 and 3
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
VCC SUPPLY CURRENT
Nominal Supply
I
CC
UGATE1, DRIVE3, LGATE1, and VOUT2 Open
-
10
-
mA
POWER-ON RESET
Rising VCC Threshold
V
OCSET
= 4.5V
8.6
-
10.4
V
Falling VCC Threshold
V
OCSET
= 4.5V
8.2
-
10.2
V
Rising VIN2 Under-Voltage Threshold
2.45
2.55
2.65
V
VIN2 Under-Voltage Hysteresis
-
500
-
mV
Rising V
OCSET1
Threshold
-
1.25
-
V
OSCILLATOR
Free Running Frequency
RT = OPEN
185
200
215
kHz
Total Variation
6k
< RT to GND < 200k
-15
-
+15
%
Ramp Amplitude
V
OSC
RT = Open
-
1.9
-
V
P-P
REFERENCE and DAC
DAC(VID0-VID4) Input Low Voltage
-
-
0.8
V
DAC(VID0-VID4) Input High Voltage
2.0
-
-
V
DACOUT Voltage Accuracy
-1.0
-
+1.0
%
Reference Voltage (Pin FB2 and FB3)
1.240
1.265
1.290
V
LINEAR REGULATOR
Regulation
10mA < I
VOUT2
< 150mA
-2.5
-
2.5
%
Under-Voltage Level
FB2
UV
FB2 Rising
-
75
87
%
Under-Voltage Hysteresis
-
6
-
%
Over-Current Protection
180
230
-
mA
Over-current Protection During Start-Up
560
700
-
mA
LINEAR CONTROLLER
Regulation
VSEN3 = DRIVE3, 0 < I
DRIVE3
< 20mA
-2.5
-
2.5
%
Under-Voltage Level
FB3
UV
FB3 Rising
-
75
87
%
HIP6018
2-228
Under-Voltage Hysteresis
-
6
-
%
DRIVE3 Source Current
VIN2 - DRIVE3 > 0.6V
20
40
-
mA
PWM CONTROLLER ERROR AMPLIFIER
DC Gain
-
88
-
dB
Gain-Bandwidth Product
GBWP
-
15
-
MHz
Slew Rate
SR
COMP = 10pF
-
6
-
V/
s
PWM CONTROLLER GATE DRIVER
Upper Drive Source
I
UGATE
VCC = 12V, V
UGATE1
(or V
GATE2
) = 6V
-
1
-
A
Upper Drive Sink
R
UGATE
V
UGATE1-PHASE1
= 1V
-
1.7
3.5
Lower Drive Source
I
LGATE
VCC = 12V, V
LGATE1
= 1V
-
1
-
A
Lower Drive Sink
R
LGATE
V
LGATE1
= 1V
-
1.4
3.0
PROTECTION
V
OUT1
Over-Voltage Trip
VSEN1 Rising
112
115
118
%
FAULT Sourcing Current
I
OVP
V
FAULT
= 10V
10
14
-
mA
OCSET1 Current Source
I
OCSET
V
OCSET
= 4.5V
DC
170
200
230
A
Soft-Start Current
I
SS
-
11
-
A
Chip Shutdown Soft-Start Threshold
-
-
1.0
V
POWER GOOD
V
OUT1
Upper Threshold
VSEN1 Rising
108
-
110
%
V
OUT1
Under Voltage
VSEN1 Rising
92
-
94
%
V
OUT1
Hysteresis (VSEN1 / DACOUT)
Upper/Lower Threshold
-
2
-
%
PGOOD Voltage Low
V
PGOOD
I
PGOOD
= -4mA
-
-
0.5
V
Electrical Specifications
Recommended Operating Conditions, Unless Otherwise Noted. Refer to Figures 1, 2 and 3 (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
FIGURE 4. R
T
RESISTANCE vs FREQUENCY
FIGURE 5. BIAS SUPPLY CURRENT vs FREQUENCY
10
100
1000
SWITCHING FREQUENCY (kHz)
RESIST
ANCE (k
)
10
100
1000
R
T
PULLUP
TO +12V
R
T
PULLDOWN TO V
SS
100
200
300
400
500
600
700
800
900
1000
0
20
40
60
80
100
SWITCHING FREQUENCY (kHz)
I
CC
(mA)
C
GATE
= 660pF
C
UGATE1
= C
LGATE1
= C
GATE
C
GATE
= 4800pF
C
GATE
= 3600pF
C
GATE
= 1500pF
V
VCC
= 12V, V
IN
= 5V
HIP6018
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