4-202
File Number
1578.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
IRF630, RF1S630SM
9A, 200V, 0.400 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17412.
Features
9A, 200V
r
DS(ON)
= 0.400
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF630
TO-220AB
IRF630
RF1S630SM
TO-263AB
RF1S630
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S630SM9A.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
June 1999
4-203
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRF630, RF1S630SM
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
200
V
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
200
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
9
6
A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
36
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
75
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.6
W/
o
C
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
150
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V (Figure 10)
200
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
25
A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C
-
-
250
A
On-State Drain Current (Note 2)
I
D(ON)
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V
9
-
-
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V
-
-
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 5A, V
GS
= 10V (Figure 8, 9)
-
0.25
0.4
Forward Transconductance (Note 2)
g
fs
V
DS
> I
D(ON)
x r
DS(ON)MAX
, I
D
= 5A (Figure 12)
3
4.8
-
S
Turn-On Delay Time
t
d(ON)
V
DD
= 90V, I
D
9A, R
GS
= 9.1
,
V
GS
= 10V
R
L
= 9.6
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-
-
30
ns
Rise Time
t
r
-
-
50
ns
Turn-Off Delay Time
t
d(OFF)
-
-
50
ns
Fall Time
t
f
-
-
40
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= 10V, I
D
= 9A, V
DS
= 0.8 x Rated BV
DSS
I
g(REF)
= 1.5mA (Figure 14)
Gate Charge is Essentially Independent of
Operating Temperature
-
19
30
nC
Gate to Source Charge
Q
gs
-
10
-
nC
Gate to Drain "Miller" Charge
Q
gd
-
9
-
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz (Figure 11)
-
600
-
pF
Output Capacitance
C
OSS
-
250
-
pF
Reverse Transfer Capacitance
C
RSS
-
80
-
pF
Internal Drain Inductance
L
D
Measured From the
Contact Screw on Tab to
Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
3.5
-
nH
Measured From the Drain
Lead, 6mm (0.25in) From
Package to Center of Die
-
4.5
-
nH
Internal Source Inductance
L
S
Measured From the
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad
-
7.5
-
nH
Thermal Resistance Junction to Case
R
JC
-
-
1.67
o
C/W
Thermal Resistance Junction to Ambient
R
JA
Free Air Operation
-
-
80
o
C/W
L
S
L
D
G
D
S
IRF630, RF1S630SM
4-204
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
-
-
9
A
Pulse Source to Drain Current
(Note 3)
I
SDM
-
-
36
A
Source to Drain Diode Voltage (Note 2)
V
SD
T
J
= 25
o
C, I
SD
= 9A, V
GS
= 0V (Figure 13)
-
-
2
V
Reverse Recovery Time
t
rr
T
J
= 150
o
C, I
SD
= 9A, dI
SD
/dt = 100A/
s
-
450
-
ns
Reverse Recovery Charge
Q
RR
T
J
= 150
o
C, I
SD
= 9A, dI
SD
/dt = 100A/
s
-
3
-
C
NOTES:
2. Pulse Test: Pulse width
300
s, Duty Cycle
2%.
3. Repetitive rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 20V, starting T
J
= 25
o
C, L = 3.37mH, R
G
= 50
,
peak I
AS
= 9A.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE
G
D
S
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0.2
0.4
0.6
0.8
1.0
1.2
4
2
0
25
50
75
100
125
150
8
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
10
6
t
1
, RECTANGULAR PULSE DURATION (s)
10
Z
JC
, NORMALIZED TRANSIENT
THERMAL IMPED
ANCE
10
-3
10
-2
10
-1
1
10
-5
10
-4
1.0
0.01
0.1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
R
JC
+ T
C
P
DM
t
1
t
2
0.1
0.02
0.2
0.5
0.01
0.05
SINGLE PULSE
IRF630, RF1S630SM
4-205
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified (Continued)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
0.1
10
1
I
D
, DRAIN CURRENT (A)
100
100
DC
100
s
10
s
1ms
10ms
100ms
1
1000
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
J
= MAX RATED
T
C
= 25
o
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
0
0
20
40
60
80
4
8
12
16
20
100
V
GS
= 10V
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0
2
0
1
2
3
5
4
6
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
8
4
V
GS
= 4V
10
V
GS
= 5V
V
GS
= 6V
V
GS
= 10V
V
GS
= 7V
V
GS
= 8V
V
GS
= 9V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0
2
5
6
7
1
0
2
6
I
D
, DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
4
8
25
o
C
125
o
C
-55
o
C
4
3
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DS
> I
D(ON)
x r
DS(ON)MAX
0
0.4
0.6
0.8
10
20
30
40
r
DS(ON)
, DRAIN T
O
SOURCE
I
D
, DRAIN CURRENT (A)
0
0.2
V
GS
= 10V
V
GS
= 20V
2
s PULSE TEST
ON RESIST
ANCE
NORMALIZED DRAIN T
O
SOURCE
2.2
1.4
1
0.6
0.2
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
1.8
80
ON RESIST
ANCE
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 5A
IRF630, RF1S630SM
4-206
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
Unless Otherwise Specified (Continued)
1.25
1.05
0.95
0.85
0.75
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN T
O
SOURCE
BREAKDO
WN V
O
L
T
A
G
E
120
160
1.15
80
I
D
= 250
A
2000
400
0
10
20
C, CAP
A
CIT
ANCE (pF)
1200
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1600
800
C
ISS
C
OSS
C
RSS
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GD
30
40
50
1
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD,
C
DS
I
D
, DRAIN CURRENT (A)
g
fs
, TRANSCONDUCT
ANCE (S)
0
0
2
4
6
8
2
4
6
8
10
10
125
o
C
25
o
C
55
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0
2
3
4
1
1
10
100
I
SD
, SOURCE T
O
DRAIN CURRENT (A)
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
150
o
C
25
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
Q
g
, GATE CHARGE (nC)
V
GS
, GA
TE T
O
SOURCE V
O
L
T
A
GE (V)
0
0
8
16
24
32
5
10
15
20
40
I
D
= 9A
V
DS
= 40V
V
DS
= 160V
V
DS
= 100V
20
IRF630, IRF632
IRF630, RF1S630SM
4-207
Test Circuits and Waveforms
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
FIGURE 17. SWITCHING TIME TEST CIRCUIT
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
FIGURE 19. GATE CHARGE TEST CIRCUIT
FIGURE 20. GATE CHARGE WAVEFORMS
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
0.3
F
12V
BATTERY
50k
V
DS
S
DUT
D
G
I
g(REF)
0
(ISOLATED
V
DS
0.2
F
CURRENT
REGULATOR
I
D
CURRENT
SAMPLING
I
G
CURRENT
SAMPLING
SUPPLY)
RESISTOR
RESISTOR
SAME TYPE
AS DUT
Q
g(TOT)
Q
gd
Q
gs
V
DS
0
V
GS
V
DD
I
G(REF)
0
IRF630, RF1S630SM
4-208
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
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7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
IRF630, RF1S630SM
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