4-27
File Number
2224.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
IRF9630, RF1S9630SM
6.5A, 200V, 0.800 Ohm, P-Channel Power
MOSFETs
These are P-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
converters, motor drivers, relay drivers and drivers for other
high-power switching devices. The high input impedance
allows these types to be operated directly from integrated
circuits.
Formerly developmental type TA17512.
Features
6.5A, 200V
r
DS(ON)
= 0.800
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF9630
TO-220AB
IRF9630
RF1S9630SM
TO-263AB
RF1S9630
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S9630SM9A.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
July 1999
4-28
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRF9630,
RF1S9630SM
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
-200
V
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
-200
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
-6.5
-4
A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
-26
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
75
W
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.6
W/
o
C
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
500
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= -250
A, V
GS
= 0V(Figure 10)
-200
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= -250
A
-2
-
-4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
-25
A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C
-
-
-250
A
On-State Drain Current (Note 2)
I
D(ON)
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= -10V
-6.5
-
-
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V
-
-
100
nA
On Resistance (Note 2)
r
DS(ON)
I
D
= -3.5A, V
GS
= -10V (Figures 8, 9)
-
0.500
0.800
Forward Transconductance (Note 2)
gfs
V
DS
I
D(ON)
x r
DS(ON)MAX
, I
D
= -3.5A
(Figure 12)
2.2
3.5
-
S
Turn-On Delay Time
t
d(ON)
V
DD
= -100V, I
D
-6.5A, R
G
= 50
R
L
= 15.4
(Figures 17, 18)
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-
30
50
ns
Rise Time
t
r
-
50
100
ns
Turn-Off Delay Time
t
d(off)
-
50
100
ns
Fall Time
t
f
-
40
80
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= -10V, I
D
= -6.5A, V
DS
= 0.8 x Rated BV
DSS
I
g(REF)
= -1.5mA (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Operating Temperature
-
31
45
nC
Gate to Source Charge
Q
gs
-
18
-
nC
Gate to Drain ("Miller") Charge
Q
gd
-
13
-
nC
Input Capacitance
C
ISS
V
DS
= -25V, V
GS
= 0V, f = 1MHz
(Figure 11)
-
550
-
pF
Output Capacitance
C
OSS
-
170
-
pF
Reverse Transfer Capacitance
C
RSS
-
50
-
pF
Internal Drain Inductance
L
D
Measured From the
Contact Screw On Tab To
the Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
3.5
-
nH
Measured From the Drain
Lead, 6mm (0.25in) From
Package to the Center of
Die
-
4.5
-
nH
Internal Source Inductance
L
S
Measured From the Source
Lead, 6mm (0.25in) From
Package to Source Bond-
ing Pad
-
7.5
-
nH
Thermal Resistance Junction to Case
R
JC
-
-
1.67
o
C/W
Thermal Resistance Junction to Ambient
R
JA
Typical Socket Mount
-
-
80
o
C/W
L
S
L
D
G
D
S
IRF9630, RF1S9630SM
4-29
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
Modified MOSFET Symbol
Showing the Integral Re-
verse P-N Junction Diode
-
-
-6.5
A
Pulse Source to Drain Current
(Note 3)
I
SDM
-
-
-26
A
Source to Drain Diode Voltage (Note 2)
V
SD
T
J
= 25
o
C, I
SD
= -6.5A, V
GS
= 0V (Figure 13)
-
-
-1.5
V
Reverse Recovery Time
t
rr
T
J
= 150
o
C, I
SD
= -6.5A, dI
SD
/dt = 100A/
s
-
400
-
ns
Reverse Recovery Charge
Q
RR
T
J
= 150
o
C, I
SD
= -6.5A, dI
SD
/dt = 100A/
s
-
2.6
-
C
NOTES:
2. Pulse Test: Pulse width
300
s, duty cycle
2%.
3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 17.75mH, R
G
= 25
,
peak I
AS
= 6.5A. (Figures 15, 16).
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
G
D
S
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0.2
0.4
0.6
0.8
1.0
1.2
-2
0
0
50
100
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
-10
150
-8
75
125
-4
-6
t
1
, RECTANGULAR PULSE DURATION (s)
Z
qJC
, NORMALIZED
THERMAL IMPEDENCE
10
-3
10
-2
1
10
-5
10
-4
0.01
0.1
10
10
-1
1
SINGLE PULSE
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
P
DM
t
1
0.1
0.02
0.2
0.5
0.01
0.05
t
2
IRF9630, RF1S9630SM
4-30
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2
s pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified (Continued)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
-100
-1
100
s
10
s
DC
1ms
10ms
100ms
-10
-1
-0.1
-1000
-10
-100
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
C
= 25
o
C
SINGLE PULSE
T
J
= MAX RATED
I
D
, DRAIN CURRENT (A)
0
-10
-20
-30
-40
-3
-6
-9
-12
-15
-50
-9V
V
GS
= -7V
V
GS
= -6V
V
GS
= -5V
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -4V
V
GS
= -10V
V
GS
= -8V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0
-4
0
-2
-4
-6
-10
-8
-12
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-16
-8
-20
V
GS
= -6V
V
GS
= -5V
V
GS
= -4V
V
GS
= -7V
V
GS
= -9V
V
GS
= -8V
V
GS
= -10V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0
-4
-6
-8
-10
-2
0
-9
-12
I
D(ON)
, ON-ST
A
TE DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
-15
-6
-3
-125
o
C
25
o
C
-55
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0
1.6
-5
-10
-15
-20
I
D
, DRAIN CURRENT (A)
-25
2.0
0
0.4
0.8
1.2
V
GS
= -10V
V
GS
= - 20V
r
DS(ON)
, DRAIN T
O
SOURCE ON
RESIST
ANCE (
)
2.5
1.5
1.0
0.5
0
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
160
2.0
80
NORMALIZED DRAIN T
O
SOURCE
ON RESIST
ANCE
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
IRF9630, RF1S9630SM
4-31
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
Unless Otherwise Specified (Continued)
1.25
0.95
0.85
0.75
-40
0
40
80
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN-T
O-SOURCE
BREAKDO
WN V
O
L
T
A
GE
120
160
1.05
1.15
2000
400
0
0
20
50
C, CAP
A
CIT
ANCE (pF)
1200
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1600
800
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
C
ISS
10
30
40
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
I
D
, DRAIN CURRENT (A)
g
fs
, TRANSCONDUCT
ANCE (S)
0
-3
-6
-9
-12
1.4
2.8
4.2
5.6
7.0
-15
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
-0.4
-1.0
-1.2
-1.6
-1.8
-0.6
-0.1
-1.0
-10
I
SD
, DRAIN CURRENT (A)
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
-100
-0.8
-1.4
T
J
= 25
o
C
T
J
= 150
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
Q
g(TOT)
, TOTAL GATE CHARGE (nC)
V
GS
, GA
TE T
O
SOURCE (V)
0
8
16
24
40
- 5
0
V
DS
= -160V
- 10
- 15
42
V
DS
= -100V
V
DS
= -40V
I
D
= -8A
IRF9630, RF1S9630SM
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