4-117
File Number
3937.5
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright Intersil Corporation 1999.
RFD8P06E, RFD8P06ESM, RFP8P06E
8A, 60V, 0.300 Ohm, P-Channel Power
MOSFETs
These are P-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, relay drivers and emitter switches for bipolar
transistors. These transistors can be operated directly from
integrated circuits.
The RFD8P06E, RFD8P06ESM and RFP8P06E incorporate
ESD protection and are designed to withstand 2kV (Human
Body Model) of ESD.
Formerly developmental type TA49044.
Features
8A, 60V
r
DS(ON)
= 0.300
Temperature Compensating PSPICE
Model
2kV ESD Protected
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP8P06E
TO-220AB
RFP8P06E
RFD8P06ESM
TO-252AA
D8P06E
RFD8P06E
TO-251AA
D8P06E
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, i.e.
RFD8P06ESM9A.
G
D
S
JEDEC TO-220AB
JEDEC TO-251AA
JEDEC TO-252AA
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
SOURCE
DRAIN (FLANGE)
GATE
DRAIN
GATE
SOURCE
DRAIN (FLANGE)
Data Sheet
July 1999
4-118
Absolute Maximum Ratings
T
C
= 25
o
C
RFD8P06E, RFD8P06ESM, RFP8P06E
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
-60
V
Drain to Gate Voltage (R
GS
= 20K
) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
-60
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
8
Refer to Peak Current Curve
A
A
Single Pulse Avalanche Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Refer to UIS Curve
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
48
0.32
W
W/
o
C
Electrostatic Discharge Rating MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . . . . . .ESD
2
kV
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V
-60
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A
-2.0
-
-4.0
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
-1.0
A
V
DS
= 0.8 x Rated BV
DSS
, T
C
= 150
o
C
-
-
-25
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V
-
-
10
A
Drain to Source On Resistance (Note 3)
r
DS(ON)
I
D
= 8A, V
GS
= -10V
-
-
0.300
Turn-On Time
t
ON
V
DD
= -30V, I
D
8A,
R
L
= 3.75
, V
GS
= -10V, R
G
= 2.5
(Figure 13)
-
-
70
ns
Turn-On Delay Time
t
d(ON)
-
15
-
ns
Rise Time
t
r
-
30
-
ns
Turn-Off Delay Time
t
d(OFF)
-
40
-
ns
Fall Time
t
f
-
25
-
ns
Turn-Off Time
t
OFF
-
-
100
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0 to -20V
V
DD
= -48V, I
D
= 8A,
R
L
= 6
I
g(REF)
= -1.45mA
-
30
36
nC
Gate Charge at 5V
Q
g(-10)
V
GS
= 0 to -10V
-
15
18
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0 to -2V
-
1.15
1.5
nC
Input Capacitance
C
ISS
V
DS
= -25V, V
GS
= 0V,
f = 1MHz
-
600
-
pF
Output Capacitance
C
OSS
-
160
-
pF
Reverse Transfer Capacitance
C
RSS
-
35
-
pF
Thermal Resistance Junction to Case
R
JC
Figure 12
-
-
3.125
o
C/W
Thermal Resistance Junction to Ambient
R
JA
TO-220
-
-
62
o
C/W
TO-251, TO-252
-
-
100
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= -8A
-
-
-1.5
V
Diode Reverse Recovery Time
t
rr
I
SD
= -8A, dI
SD
/dt = -100A/
s
-
-
125
ns
NOTES:
2. Pulse test: pulse width
300
s, duty cycle
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
RFD8P06E, RFD8P06ESM, RFP8P06E
4-119
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
PO
WER DISSIP
A
TION MUL
TIPLIER
T
C
, CASE TEMPERATURE (
o
C)
-4
-8
-2
0
25
50
75
100
125
150
175
I
D
,
DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
-6
-10
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, RECTANGULAR PULSE DURATION (s)
Z
JC
, NORMALIZED
THERMAL IMPED
ANCE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
P
DM
t
1
t
2
0.01
0.02
0.05
0.1
0.2
0.5
SINGLE PULSE
-100
-10
-1
-0.1
-1
-10
-100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
DRAIN CURRENT (A)
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
100
s
10ms
100ms
DC
1ms
T
C
= 25
o
C, T
J
= MAX RATED
V
GS
= -20V
V
GS
= -10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES ABOVE 25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
-5
I
I
25
175
T
C
150
----------------------
=
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
-10
-10
2
t, PULSE WIDTH (s)
I
DM
,
PEAK CURRENT (A)
T
C
= 25
o
C
RFD8P06E, RFD8P06ESM, RFP8P06E
4-120
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified (Continued)
-30
-10
-1
0.01
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
I
AS
,
A
V
ALANCHE CURRENT (A)
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
If R = 0
t
AV
= (L) (I
AS
) / (1.3RATED BV
DSS
- V
DD
)
If R
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
0
0
-1.5
-3.0
-4.5
-6.0
-7.5
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -5V
V
GS
= -6V
V
GS
= -8V
V
GS
= -7V
V
GS
= -10V
-5
-10
-15
-20
V
GS
= -4.5V
V
GS
= -20V
PULSE DURATION = 80
s
T
C
= 25
o
C
DUTY CYCLE = 0.5% MAX
0
-2
-4
-6
-8
-10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
Ds(ON)
, DRAIN T
O
SOURCE CURRENT (A)
0
PULSE DURATION = 250
s
DUTY CYCLE = 0.5% MAX
-55
o
C
V
DD
= -15V
175
o
C
25
o
C
-5
-10
-20
-15
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN T
O
SOURCE
2.5
PULSE DURATION = 80
s
V
GS
= -10V, I
D
= 8A
ON RESIST
ANCE
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
160
120
200
THRESHOLD V
O
L
T
A
GE
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED GA
TE
V
GS
= V
DS
, I
D
= 250
A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
200
NORMALIZED DRAIN T
O
SOURCE
BREAKDO
WN V
O
L
T
A
GE
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 250
A
RFD8P06E, RFD8P06ESM, RFP8P06E
4-121
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE:
Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. SWITCHING TIME TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
800
600
400
200
0
0
-5
-10
-15
-20
-25
C
,
CAP
A
CIT
ANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1000
C
ISS
C
RSS
C
OSS
V
GS
= 0V, f = 1MHz
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GS
-60
-45
-30
-15
0
-10.0
-7.5
-5.0
-2.5
0.0
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
t, TIME (
s)
V
DD
= BV
DSS
V
DD
= BV
DSS
R
L
= 1.2
I
G(REF)
= 1.45mA
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
V
DS
,
DRAIN T
O
SOURCE V
O
L
T
A
GE (V)
V
GS
,
G
A
TE T
O
SOURCE V
O
L
T
A
GE (V)
V
GS
= -10V
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
DUT
t
P
-V
GS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
R
GS
R
L
DUT
-V
GS
0V
+
-
V
GS
V
DS
t
d(ON)
t
r
90%
10%
V
DS
90%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
t
ON
10%
0
0
RFD8P06E, RFD8P06ESM, RFP8P06E
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