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Электронный компонент: RFD8P06LE

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7-11
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFD8P06LE, RFD8P06LESM, RFP8P06LE
8A, 60V, 0.300 Ohm, ESD Rated, Logic
Level, P-Channel Power MOSFET
These products are P-Channel power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA49203.
Features
8A, 60V
r
DS(ON)
= 0.300
2kV ESD Protected
Temperature Compensating PSPICE
Model
PSPICE Thermal Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD8P06LE
TO-251AA
F8P6LE
RFD8P06LESM
TO-252AA
F8P6LE
RFP8P06LE
TO-220AB
FP8P06LE
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e.,
RFD8P06LESM9A.
D
G
S
JEDEC TO-251AA
JEDEC TO-252AA
JEDEC TO-220AB
SOURCE
DRAIN (FLANGE)
GATE
DRAIN
GATE
SOURCE
DRAIN (FLANGE)
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
Data Sheet
July 1999
File Number
4273.1
7-12
Absolute Maximum Ratings
T
C
= 25
o
C Unless Otherwise Specified
RFD8P06LE, RFD8P06LESM,
RFP8P06LE
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
-60
V
Drain to Gate Voltage (R
GS
= 20k
)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
-60
V
Continuous Drain Current
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
-8
-6.3
A
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
See Figure 5
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
10
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
48
W
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.32
W/
o
C
Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
See Figure 6
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 175
o
C
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(0.063in (1.6mm) from case for 10s)
300
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V (Figure 11)
-60
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A (Figure 12)
-1
-
-2
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
=- 60V, V
GS
= 0V
T
J
= 25
o
C
-
-
-1
A
T
J
= 150
o
C
-
-
-50
A
Gate to Source Leakage Current
I
GSS
V
GS
=
10V
-
-
10
A
On Resistance (Note 1)
r
DS(ON)
I
D
= 8A, V
GS
= -5V (Figure 9, 10)
-
-
0.300
I
D
= 8A, V
GS
= -4.5V (Figure 9, 10)
-
-
0.330
Turn-On Time
t
ON
V
DD
= -30V, I
D
8A, R
GS
= 9.1
, R
L
= 3.75
(Figure 13)
-
-
90
ns
Turn-On Delay Time
t
d(ON)
-
10
-
ns
Rise Time
t
r
-
50
-
ns
Turn-Off Delay Time
t
d(OFF)
-
30
-
ns
Fall Time
t
f
-
20
-
ns
Turn-Off Time
t
OFF
-
-
75
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0 to -10V
V
DD
= -48V, I
D
8A,
R
L
= 6
I
g(REF)
= -0.2mA
(Figure 14)
-
25
30
nC
Gate Charge at -5V
Q
g(-5)
V
GS
= 0 to -5V
-
15
18
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0 to -1V
-
1.2
1.5
nC
Input Capacitance
C
ISS
V
DS
=- 25V, V
GS
= 0V, f = 1MHz
(Figure 15)
-
675
-
pF
Output Capacitance
C
OSS
-
175
-
pF
Reverse Transfer Capacitance
C
RSS
-
50
-
pF
Thermal Resistance Junction to Case
R
JC
-
-
3.125
o
C/W
Thermal Resistance Junction to Ambient
R
JA
TO-251AA, TO-252AA
-
-
100
o
C/W
TO-220AB
80
o
C/W
Source to Drain Diode Specifications
T
C
= 25
o
C Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 1)
V
SD
T
J
= 25
o
C, I
SD
=- 8A, V
GS
= 0V
-
-
-1.5
V
Reverse Recovery Time
t
rr
T
J
= 25
o
C, I
SD
=- 8A, dI
SD
/dt = 100A/
s
-
-
125
ns
NOTE:
2. Pulse Test: Pulse width
300
s, Duty Cycle
2%.
RFD8P06LE, RFD8P06LESM, RFP8P06LE
7-13
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
-4
-2
0
25
50
75
100
125
150
-8
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
-10
-6
175
t, RECTANGULAR PULSE DURATION (s)
10
1
Z
JC
, NORMALIZED
THERMAL IMPED
ANCE
10
-3
10
-2
10
-1
10
0
10
-5
10
-4
1.0
0.01
0.1
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
P
DM
t
1
t
2
0.1
0.02
0.2
0.5
0.01
0.05
SINGLE PULSE
2.0
NOTES:DUTY FACTOR: D = t
1
/t
2
-100
-10
-1
-0.1
-1
-10
-100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
DRAIN CURRENT (A)
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
100
s
10ms
V
DS(MAX)
= -60V
1ms
100ms
DC
T
C
= 25
o
C, T
J
= MAX RATED
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
-10
-10
2
t, PULSE WIDTH (ms)
I
DM
,
PEAK CURRENT (A)
-5
V
GS
= -10V
V
GS
= -5V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES ABOVE 25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
I
I
25
175
T
C
150
------------------------
=
T
C
= 25
o
C
RFD8P06LE, RFD8P06LESM, RFP8P06LE
7-14
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
-30
-10
-1
0.01
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
I
AS
,
A
V
ALANCHE CURRENT (A)
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
If R = 0
t
AV
= (L) (I
AS
) / (1.3RATED BV
DSS
- V
DD
)
If R
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
0
0
-1.5
-3.0
-4.5
-7.5
-10
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -4V
V
GS
= -10V
-6.0
V
GS
= -4.5V
V
GS
= -3V
V
GS
= -5V
-20
-30
-15
-25
-5
PULSE DURATION = 250
s
T
C
= 25
o
C
DUTY CYCLE = 0.5% MAX
0
-3.0
-4.5
-6.0
-7.5
-1.5
0
-10
175
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DD
= -15V
I
D(ON)
, ON-ST
A
TE DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
-55
o
C
25
o
C
-20
-30
-25
-15
-5
I
D
= -8A
I
D
= -4A
I
D
= -2A
I
D
= -1A
r
DS(ON)
, ON-ST
A
TE RESIST
ANCE (m
)
200
300
400
500
600
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
NORMALIZED ON RESIST
ANCE
2.25
1.25
1.00
0.75
0.50
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
1.50
80
1.75
2.00
160
200
-80
V
GS
= -5V, I
D
= -8A
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
NORMALIZED DRAIN T
O
SOURCE
2.0
1.05
1.0
0.95
0.9
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
1.1
80
1.15
BREAKDO
WN V
O
L
T
A
G
E
-80
160
200
I
D
= -250
A
RFD8P06LE, RFD8P06LESM, RFP8P06LE
7-15
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 13. SWITCHING TIME AS A FUNCTION OF GATE
RESISTANCE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 14. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
FIGURE 15. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Test Circuits and Waveforms
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
-80
-40
0
40
80
120
160
0.6
0.8
1.0
1.2
1.4
NORMALIZED GA
TE
THRESHOLD V
O
L
T
A
GE
T
J
, JUNCTION TEMPERATURE (
o
C)
200
V
GS
= V
DS
, I
D
= -250
A
100
20
30
40
50
0
25
75
125
50
0
10
SWITCHING TIME (ns)
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
DD
= -30V, I
D
= -8A, R
L
= 3.75
t
d(ON)
t
f
t
d(OFF)
t
r
V
DD
=BV
DSS
-60
-45
-30
-15
0
-5.00
-3.75
-2.50
-1.25
0.00
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
t, TIME (
s)
V
DD
= BV
DSS
R
L
= 7.5
I
G(REF)
= -0.20mA
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
V
DS
,
DRAIN T
O
SOURCE V
O
L
T
A
GE (V)
V
GS
,
G
A
TE T
O
SOURCE V
O
L
T
A
GE (V)
V
GS
= -5V
800
600
400
200
0
0
-10
-20
-30
-40
-50
C
,
CAP
A
CIT
ANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1000
C
ISS
C
OSS
C
RSS
-60
V
GS
= 0V, f = 0.1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
DUT
t
P
-V
GS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
RFD8P06LE, RFD8P06LESM, RFP8P06LE