4-161
File Number
1495.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999.
RFP12P08, RFP12P10
12A, 80V and 100V, 0.300 Ohm, P-Channel
Power MOSFETs
The RFP12P08, and RFP12P10 are P-Channel
enhancement mode silicon gate power field effect transistors
designed for applications such as switching regulators,
switching convertors, motor drivers, relay drivers, and drivers
for high power bipolar switching transistors requiring high
speed and low gate drive power. These types can be
operated directly from integrated circuits.
Formerly developmental type TA17511.
Features
12A, 80V and 100V
r
DS(ON)
= 0.300
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP12P08
TO-220AB
RFP12P08
RFP12P10
TO-220AB
RFP12P10
NOTE: When ordering, include the entire part number.
G
D
S
SOURCE
DRAIN
GATE
DRAIN
(TAB)
Data Sheet
June 1999
4-162
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFP12P08
RFP12P10
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
-80
-100
V
Drain to Gate Voltage (R
GS
= 20K
)
(Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
-80
-100
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
12
12
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
30
30
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
75
75
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.6
0.6
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0
RFP12P08
-80
-
-
V
RFP12P10
-100
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A
-2
-
-4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
1
A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V,
T
C
= 125
o
C
-
-
25
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V, V
DS
= 0
-
-
100
nA
Drain to Source On Voltage (Note 2)
V
DS(ON)
I
D
= 12A, V
GS
= -10V
-
-
-3.6
V
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 12A, V
GS
= -10V, (Figures 6, 7)
-
-
0.300
Turn-On Delay Time
t
d(ON)
I
D
12A, V
DD
= 50V,
R
G
= 50
, R
L
= 4.1
, V
GS
= -10V
(Figure 10)
-
18
60
ns
Rise Time
t
r
-
90
175
ns
Turn-Off Delay Time
t
d(OFF)
-
144
275
ns
Fall Time
t
f
-
94
175
ns
Input Capacitance
C
ISS
V
GS
= 0V, V
DS
= -25V, f = 1MHz
(Figure 9)
-
-
1500
pF
Output Capacitance
C
OSS
-
-
700
pF
Reverse Transfer Capacitance
C
RSS
-
-
300
pF
Thermal Resistance, Junction to Case
R
JC
RFP12P08, RFP12P10
-
-
1.67
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= -12A
-
-
1.4
V
Diode Reverse Recovery Time
t
rr
I
SD
= -12A, dI
SD
/dt = 100A/
s
-
200
-
ns
NOTES:
2. Pulse Test: Pulse Width =
300
s Max, Duty Cycle
2%
3. Repetitive rating: pulse width limited by maximum junction temperature.
RFP12P08, RFP12P10
4-163
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0.2
0.4
0.6
0.8
1.0
1.2
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
, DRAIN CURRENT (A)
-8
-7
-6
-5
-4
-3
-2
-1
0
-12
-11
-10
-9
-13
-14
100
10
1
0.1
1
10
100
1000
I
D
, DRAIN CURRENT (A)
OPERATION IN THIS AREA
LIMITED BY r
DS(ON)
V
DS
, DRAIN TO SOURCE (V)
T
C
= 25
o
C
DC
I
D
MAX CONTINUOUS
T
J
= MAX RATED
RFP12P08
RFP12P10
30
20
10
0
-2
-4
I
D,
DRAIN CURRENT (A)
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
s
T
C
= 25
o
C
V
GS
= -20V
-6
-8
-10
V
GS
= -7V
V
GS
= -8V
V
GS
= -6V
V
GS
= -5V
V
GS
= -4V
V
GS
= -3V
V
GS
= -10V
40
0
V
GS
= -9V
DUTY CYCLE = 0.5% MAX
I
DS(ON),
DRAIN T
O
SOURCE CURRENT (A)
20
12
4
0
-2
-4
-6
-7
V
GS,
GATE TO SOURCE VOLTAGE (V)
0
V
DS
= -10V
PULSE DURATION = 80
s
125
o
C
-40
o
C
125
o
C
25
o
C
-40
o
C
16
8
-3
-5
-8
DUTY CYCLE = 0.5% MAX
DRAIN T
O
SOURCE ON
I
D,
DRAIN CURRENT (A)
0.3
0.2
0.1
0
0
2
8
12
20
RESIST
ANCE (
)
4
6
10
14
V
GS
= -10V
PULSE DURATION = 80
s
25
o
C
-40
o
C
125
o
C
18
16
0.4
DUTY CYCLE = 0.5% MAX
RFP12P08, RFP12P10
4-164
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 11. SWITCHING TIME TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
(Continued)
1.5
1.0
0.5
-50
0
50
100
150
T
J,
JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN T
O
SOURCE
2.0
ON RESIST
ANCE
0
I
D
= 12A, V
GS
= -10V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
1.2
1.0
-50
0
50
100
T
J,
JUNCTION TEMPERATURE (
o
C)
NORMALIZED GA
TE
0.9
0.8
0.7
1.1
1.3
150
V
DS
= V
GS
I
D
= 250
A
THRESHOLD V
O
L
T
A
G
E
0.6
0
10
20
30
40
50
C, CAP
A
CIT
ANCE (
P
F)
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
2000
1600
400
800
0
2400
C
ISS
C
OSS
C
RSS
1200
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
0.75BV
DSS
0.75BV
DSS
0.50BV
DSS
0.25BV
DSS
0.25BV
DSS
GATE
SOURCE
VOLTAGE
V
DD
= BV
DSS
V
DD
= BV
DSS
I
G(REF)
I
G(ACT)
20
80
DRAIN SOURCE
I
G(REF)
I
G(ACT)
R
L
= 8.3
I
G(REF)
= 0.92mA
V
GS
= -10V
V
DS
, DRAIN T
O
SOURCE V
O
L
T
A
GE (V)
t, TIME (
s)
V
GS
, GA
TE T
O
SOURCE V
O
L
T
A
GE (V)
100
75
50
25
0
10
8
6
4
0
2
0.50BV
DSS
VOLTAGE
V
GS
R
L
R
G
DUT
+
-
V
DD
t
d(ON)
t
r
90%
10%
V
DS
90%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
t
ON
10%
0
0
RFP12P08, RFP12P10
4-165
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
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100, Rue de la Fusee
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TEL: (32) 2.724.2111
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7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
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TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
RFP12P08, RFP12P10
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