4-528
CAUTION: These devices are sensitive to electrostatic discharge; follow properS ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
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Copyright
Intersil Corporation 1999
RFP4N100, RF1S4N100SM
4.3A, 1000V, 3.500 Ohm, High Voltage,
N-Channel Power MOSFETs
The RFP4N100 and RFP4N100SM are N-Channel
enhancement mode silicon gate power field effect
transistors. They are designed for use in applications such
as switching regulators, switching converters, motor
drivers, relay drivers, and drivers for high power bipolar
switching transistors requiring high speed and low gate
drive power. This type can be operated directly from an
integrated circuit.
Formerly developmental type TA09850.
Features
4.3A, 1000V
r
DS(ON)
= 3.500
UIS Rating Curve (Single Pulse)
-55
o
C to 150
o
C Operating Temperature
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP4N100
TO-220AB
RFP4N100
RF1S4N100SM
TO-263AB
F1S4N100
NOTE: When ordering, use the entire part number.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
August 1999
File Number
2457.4
4-529
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFP4N100,
RF1S4N100SM
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
1000
V
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
1000
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
4.3
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
17
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
20
V
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
(See UIS SOA Curve)
(Figures 4, 14, 15)
mJ
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150
1.2
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V (Figure 10)
1000
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 1000V, V
GS
= 0V
-
-
25
A
V
DS
= 800V, V
GS
= 0V, T
C
= 150
o
C
-
-
100
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V
-
-
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 2.5A, V
GS
= 10V (Figures 8, 9)
-
-
3.500
Turn-On Delay Time
t
d(ON)
V
DD
= 500V, I
D
3.9A, R
GS
= 9.1
,
R
L
= 120
)
-
-
30
ns
Rise Time
t
r
-
-
50
ns
Turn-Off Delay Time
t
d(OFF)
-
-
170
ns
Fall Time
t
f
-
-
50
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= 20V, I
D
= 3.9A, V
DS
= 800V
(Figure 13)
-
-
120
nC
Thermal Resistance Junction to Case
R
JC
-
-
0.83
o
C/W
Thermal Resistance Junction to Ambient
R
JA
-
-
62
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 4.3A
-
-
1.8
V
Reverse Recovery Time
t
rr
I
SD
= 3.9A, dI
SD
/dt = 100A/
s
-
-
1000
ns
NOTES:
2. Pulse test: pulse width
80
s, duty cycle
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
RFP4N100, RF1S4N100SM
4-530
Typical Performance Curves
T
C
= 25
o
C, Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING SOA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
T
A
, AMBIENT TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0.0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
4.5
3.0
1.5
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
, DRAIN CURRENT (A)
4.0
1.0
0.5
3.5
2.5
2.0
1
10
100
1000
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
10
1
0.1
0.01
I
D
, DRAIN CURRENT (A)
BY r
DS(ON)
AREA MAY BE LIMITED
OPERATION IN THIS
RFP4N100, RF1S4N100SM
10
s
100
s
1ms
10ms
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
DC
0.01
0.10
1
10
t
AV
, TIME IN AVALANCHE (ms)
100
10
1
I
AS
, A
V
ALANCHECURRENT (A)
Idm
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
IF R = 0
t
av
= (L)(I
as
) / (1.3 x RATED BV
DSS
- V
DD
)
IF R
0
t
av
= (L/R) In ((I
as
x R) / (1.3 x RATED BV
DSS
- V
DD
) + 1)
0
100
200
300
400
500
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
8
6
4
2
0
I
D
, DRAIN CURRENT (A)
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
V
GS
= 10V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0
10
20
30
40
50
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
8
6
4
2
0
I
D
, DRAIN CURRENT (A)
V
GS
= 10V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
RFP4N100, RF1S4N100SM
4-531
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. DRAIN CURRENT vs SOURCE TO DRAIN DIODE
VOLTAGE
Typical Performance Curves
T
C
= 25
o
C, Unless Otherwise Specified (Continued)
0
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
5
4
3
2
1
0
I
DS(ON)
, DRAIN T
O
SOURCE CURRENT (A)
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DS
= 15V
150
o
C
25
o
C
6
5
4
3
2
1
0
0
2
4
6
8
10
12
V
GS
= 10V
I
D
, DRAIN CURRENT (A)
r
DS(ON)
, DRAIN T
O
SOURCE
PULSE DURATION = 80
s
ON RESIST
ANCE (
)
DUTY CYCLE = 0.5% MAX
NORMALIZED DRAIN T
O
SOURCE
3.0
2.0
1.5
1.0
0.5
-50
0
50
T
J
, JUNCTION TEMPERATURE (
o
C)
100
2.5
V
GS
= 10V, I
D
= 4.3A
150
ON RESIST
ANCE
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
NORMALIZED DRAIN T
O
SOURCE
1.3
1.1
1.0
0.9
0.8
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
1.2
80
I
D
= 250
A
160
BREAKDO
WN V
O
L
T
A
GE
1
10
100
3000
2500
2000
1500
1000
500
0
C, CAP
A
CIT
ANCE (pF)
C
ISS
C
OSS
C
RSS
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
100
10
1
0.1
I
D
, SOURCE T
O
DRAIN CURRENT (A)
T
J
= 150
o
C
T
J
= 25
o
C
1.5
RFP4N100, RF1S4N100SM
4-532
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. SWITCHING TIME TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
T
C
= 25
o
C, Unless Otherwise Specified (Continued)
0
20
40
60
80
Q
g
, TOTAL GATE CHARGE (nC)
V
GS
, GA
TE T
O
SOURCE V
O
L
T
A
GE (V)
0
4
8
12
16
I
D
= 3.9A
V
DS
= 200V
V
DS
= 100V
V
DS
= 400V
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
RFP4N100, RF1S4N100SM
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