4-474
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFG70N06, RFP70N06, RF1S70N06SM
70A, 60V, 0.014 Ohm, N-Channel Power
MOSFETs
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as
switching regulators, switching converters, motor drivers and
relay drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA49007.
Features
70A, 60V
r
DS(on)
= 0.014
Temperature Compensated PSPICE
Model
Peak Current vs Pulse Width Curve
UIS Rating Curve (Single Pulse)
175
o
C Operating Temperature
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
JEDEC STYLE TO-247
JEDEC TO-220AB
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG70N06
TO-247
RFG70N06
RFP70N06
TO-220AB
RFP70N06
RF1S70N06SM
TO-263AB
F1S70N06
NOTE: When ordering use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, e.g. RF1S70N06SM9A.
G
D
S
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
July 1999
File Number
3206.5
4-475
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFG70N06, RFP70N06
RF1S70N06SM
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
60
V
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
60
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
70
Refer to Peak Current Curve
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
V
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Refer to UIS Curve
A
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150
1.0
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V (Figure 11)
60
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A (Figure 10)
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60V, V
GS
= 0V
-
-
1
A
V
DS
= 0.8 x Rated BV
DSS
, T
C
= 150
o
C
-
-
25
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V
-
-
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 70A, V
GS
= 10V (Figure 9)
-
-
0.014
Turn-On Time
t
(ON)
V
DD
= 30V, I
D
70A, R
L
= 0.43
,
V
GS
= 10V, R
GS
= 2.5
(Figure 13)
-
-
125
ns
Turn-On Delay Time
t
d(ON)
-
12
-
ns
Rise Time
t
r
-
50
-
ns
Turn-Off Delay Time
t
d(OFF)
-
40
-
ns
Fall Time
t
f
-
15
-
ns
Turn-Off Time
t
(OFF)
-
-
125
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 20V
V
DD
= 48V, I
D
= 70A,
R
L
= 0.68
I
g(REF)
= 2.2mA
(Figure 13)
-
185
215
nC
Gate Charge at 10V
Q
g(10)
V
GS
= 0V to 10V
-
100
115
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 2V
-
5.5
6.5
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 12)
-
3000
-
pF
Output Capacitance
C
OSS
-
900
-
pF
Reverse Transfer Capacitance
C
RSS
-
300
-
pF
Thermal Resistance, Junction to Case
R
JC
-
-
1.0
o
C/W
Thermal Resistance, Junction to Ambient
R
JA
TO-220 and TO-263
-
-
62
o
C/W
TO-247
-
-
30
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 70A
-
1.5
V
Reverse Recovery Time
t
rr
I
SD
= 70A, dI
SD
/dt = 100A/
s
-
125
ns
NOTES:
2. Pulse test: pulse width
300ms, duty cycle
2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
RFG70N06, RFP70N06, RF1S70N06SM
4-476
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
30
10
0
25
50
75
100
125
150
50
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
70
175
40
20
60
80
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION (s)
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
0.01
0.02
0.05
0.1
0.2
0.5
THERMAL IMPED
ANCE
Z
JC
, NORMALIZED
P
DM
t
1
t
2
SINGLE PULSE
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
100
10
1
1
10
100
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
100
s
1ms
10ms
100ms
DC
500
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
t, PULSE WIDTH (s)
50
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
100
I
DM
, PEAK CURRENT (A)
1000
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 10V
I
I
25
175
T
C
150
-----------------------
=
T
C
= 25
o
C
RFG70N06, RFP70N06, RF1S70N06SM
4-477
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified (Continued)
0.01
0.1
100
300
10
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
0
t
AV
= (L/R) ln [(I
AS
*R)/(1.3*RATED BV
DSS
-V
DD
) +1]
I
AS
, A
V
ALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
1
10
0
80
0
1
2
3
5
120
160
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 7V
V
GS
= 10V
200
4
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 20V
V
GS
= 8V
40
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= 6V
0
4
6
8
10
2
0
40
80
120
I
DS(ON)
, DRAIN T
O
SOURCE CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
160
-55
o
C
25
o
C
200
175
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
0
0.5
1
1.5
-80
-40
0
40
80
120
160
NORMALIZED DRAIN T
O
SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
200
2
2.5
V
GS
= 10V, I
D
= 70A
PULSE DURATION = 250
s
ON RESIST
ANCE
DUTY CYCLE = 0.5% MAX
-80
-40
0
40
80
120
160
0
0.5
1.0
1.5
2.0
NORMALIZED GA
TE
THRESHOLD V
O
L
T
A
GE
T
J
, JUNCTION TEMPERATURE (
o
C)
200
V
GS
= V
DS
, I
D
= 250
A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN T
O
SOURCE
BREAKDO
WN V
O
L
T
A
GE
200
I
D
= 250
A
RFG70N06, RFP70N06, RF1S70N06SM
4-478
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. SWITCHING TIME TEST CIRCUIT
FIGURE 17. SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
5000
1000
0
0
5
10
15
20
25
C, CAP
A
CIT
ANCE (pF)
4000
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
OSS
C
RSS
3000
2000
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GS
60
45
30
15
0
10
7.5
5
2.5
0
V
DS
, DRAIN T
O
SOURCE V
O
L
T
A
GE (V)
V
GS
, GA
TE T
O
SOURCE V
O
L
T
A
GE (V)
I
G(REF)
I
G(ACT)
20
I
G(REF)
I
G(ACT)
80
t, TIME (
s)
R
L
= 0.86
I
G(REF)
= 2.2mA
V
GS
= 10V
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
V
DD
= BV
DSS
V
DD
= BV
DSS
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
R
L
R
GS
DUT
+
-
V
DD
V
DS
V
GS
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
RFG70N06, RFP70N06, RF1S70N06SM
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