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Электронный компонент: RFP7N10LE

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Copyright
Harris Corporation 1994
1
S E M I C O N D U C T O R
Packaging
JEDEC TO-220AB
TOP VIEW
JEDEC TO-251AA
TOP VIEW
JEDEC TO-252AA
TOP VIEW
Symbol
DRAIN
(FLANGE)
GATE
DRAIN
SOURCE
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
G
D
S
Features
7A, 100V
r
DS(ON)
= 0.300
2KV ESD Protected
Temperature Compensating PSPICE Model
Can be Driven Directly from CMOS, NMOS, TTL Circuits
Peak Current vs Pulse Width Curve
UIS Rating Curve
+175
o
C Operating Temperature
Description
The RFD7N10LE, RFD7N10LESM and RFP7N10LE N-
Channel power MOSFETs are manufactured using the
MegaFET process. This process, which uses feature sizes
approaching those of LSI integrated circuits gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as switch-
ing regulators, switching converters, motor drivers, relay
drivers and emitter switches for bipolar transistors. This per-
formance is accomplished through a special gate oxide
design which provides full rated conductance at gate bias in
the 3V to 5V range, thereby facilitating true on-off power con-
trol directly from logic level (5V) integrated circuits.
The RFD7N10LE is supplied in the JEDEC TO-251AA plas-
tic package, the RFD7N10LESM is supplied in the JEDEC
TO-252AA plastic package and the RFP7N10LE is supplied
in the JEDEC TO-220AB plastic package. Due to space limi-
tations the RFD7N10LE and RFD7N10LESM are branded
7N10LE; the RFP7N10LE is branded FP7N10LE.
When ordering use the entire part number; e.g. RFD7N10-
LESM.
Formerly developmental type TA49046.
February 1994
File Number
3598
RFD7N10LE, RFD7N10LESM
RFP7N10LE
7A, 100V, ESD Rated, Avalanche Rated, Logic Level
N-Channel Enhancement-Mode Power MOSFETs (MegaFETs)
Absolute Maximum Ratings
(T
C
= +25
o
C)
RFD7N10LE,
RFD7N10LESM, RFP7N10LE
UNITS
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
100
V
Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
100
V
Gate Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
+10, -8
V
Drain Current
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
7
Refer to Peak Current Curve
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Refer to UIS Curve
Power Dissipation
(T
C
= +25
o
C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate above +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
47
0.318
W
W/
o
C
Electrostatic Discharge Rating, MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . . ESD
2
KV
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
,T
J
-55 to +175
o
C
2
Specifications RFD7N10LE, RFD7N10LESM, RFP7N10LE
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
TYP
MAX
Drain-Source Breakdown Voltage
BV
DSS
I
D
= 0.25mA, V
GS
= 0V
100
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 0.25mA
1
-
2
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 100V,
V
GS
= 0V
T
C
= +25
o
C
-
-
1
A
T
C
= +150
o
C
-
-
50
A
Gate-Source Leakage Current
I
GSS
V
GS
= +10, -8V
-
-
10
A
On Resistance
r
DS(ON)
I
D
= 7A, V
GS
= 5V
-
-
0.300
W
Turn-On Time
t
ON
V
DD
= 50V, I
D
= 7A
R
L
= 7.1
, V
GS
= 5V
R
GS
= 2.5
-
-
110
ns
Turn-On Delay Time
t
D(ON)
-
10
-
ns
Rise Time
t
R
-
65
-
ns
Turn-Off Delay Time
t
D(OFF)
-
23
-
ns
Fall Time
t
F
-
18
-
ns
Turn-Off Time
t
OFF
-
-
60
ns
Total Gate Charge
Q
G(TOT)
V
GS
= 0 to 10V
V
DD
= 80V
I
D
= 7A,
R
L
= 11.4
-
125
150
nC
Gate Charge at 5V
Q
G(5)
V
GS
= 0 to 5V
-
67
80
nC
Threshold Gate Charge
Q
G(TH)
V
GS
= 0 to 1V
-
3.7
4.5
nC
Plateau Voltage
V
(PLATEAU)
I
D
= 7A, V
DS
= 15V
-
-
4.0
V
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V
f = 1MHz
-
360
-
pF
Output Capacitance
C
OSS
-
70
-
pF
Reverse Transfer Capacitance
C
RSS
-
20
-
pF
Thermal Resistance
Junction to Case
R
JC
-
-
3.15
o
C/W
Thermal Resistance
Junction to Ambient
R
JA
TO-251 and TO-252 Package
-
-
100
o
C/W
TO-220 Package
80
Source-Drain Diode Specifications
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
TYP
MAX
Forward Voltage
V
SD
I
SD
= 7A
-
-
1.5
V
Reverse Recovery Time
t
RR
I
SD
= 7A, dI
SD
/dt = 100A/
s
-
-
130
ns
3
RFD7N10LE, RFD7N10LESM, RFP7N10LE
Typical Performance Curves
FIGURE 1. SAFE OPERATING AREA CURVE
FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
1
10
200
I
D
, DRAIN CURRENT (A)
0.1
1
20
10
100
s
1ms
10ms
DC
V
DSS
MAX = 100V
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
14
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
NORMALIZED
THERMAL RESPONSE (Z
QJC
)
0.01
10
0.1
1
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
X Z
JC
+ T
C
P
DM
t
1
t
2
0.01
0.5
0.2
0.1
0.05
0.02
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
DRAIN CURRENT (A)
8
4
2
0
25
50
75
100
125
150
175
6
V
GS
= 5V
FOR TEMPERATURES
ABOVE +25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
(
)
175 - T
C
150
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
t, PULSE WIDTH (ms)
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
I
DM
,
PEAK CURRENT CAP
ABILITY (A)
20
10
5
14
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
I
D
,
DRAIN CURRENT (A)
PULSE DURATION = 250
s
T
C
= +25
o
C
0
5
10
15
0
1.5
3.0
4.5
6.0
7.5
V
GS
= 3V
V
GS
= 4V
V
GS
= 4.5V
V
GS
= 10V
V
GS
= 5V
+25
o
C
V
DD
= 15V
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
0.0
3.0
4.0
5.0
6.0
7.0
1.0
0
5
10
15
I
D(ON)
,
ON ST
A
TE DRAIN CURRENT (A)
PULSE TEST
PULSE DURATION = 250
s
DUTY CYCLE = 0.5% MAX
-55
o
C
2.0
+175
o
C
4
RFD7N10LE, RFD7N10LESM, RFP7N10LE
FIGURE 7. NORMALIZED R
DS(ON)
vs JUNCTION
TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
FIGURE 10. NORMALIZED POWER DISSIPATION vs
TEMPERATURE DERATING CURVE
FIGURE 11. TYPICAL CAPACITANCE vs DRAIN -TO-SOURCE
VOLTAGE
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT. REFER TO HARRIS
APPLICATION NOTES AN7254 AND AN7260
Typical Performance Curves
(Continued)
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED R
DS(ON)
I
D
= 7A
V
GS
= 5V,
PULSE DURATION = 250
s,
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
-80
-40
0
40
80
120
200
160
0.0
0.5
1.0
1.5
2.0
NORMALIZED GA
TE THRESHOLD VOL
T
AGE
V
GS
= V
DS
, I
D
= 250
A
I
D
= 250
A
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
200
BV
DSS
,
NORMALIZED DRAIN-T
O-SOURCE
BREAKDOWN VOL
T
AGE
T
J
, JUNCTION TEMPERATURE (
o
C)
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
175
0
POWER DISSIP
A
TION MUL
TIPLIER
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
= 0V
FREQUENCY (f) = 1MHz
600
400
200
0
0
5
10
15
20
25
C
,
CAP
ACIT
ANCE (pF)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
C
ISS
C
OSS
C
RSS
100
75
50
25
0
20
I
G REF
(
)
I
G ACT
(
)
---------------------
t, TIME (
s)
80
I
G REF
(
)
I
G ACT
(
)
---------------------
5.00
3.75
2.50
1.25
0.00
V
DS
,
DRAIN-SOURCE VOL
T
AGE (V)
V
GS
,
G
A
TE SOURCE VOL
T
AGE (V)
V
DD
= BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
R
L
= 14.28
I
G(REF)
= 0.24mA
V
GS
= 5V
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
V
DD
= BV
DSS
5
RFD7N10LE, RFD7N10LESM, RFP7N10LE
FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits
FIGURE 14. UNCLAMPED ENERGY WAVEFORMS
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. RESISTIVE SWITCHING WAVEFORMS
FIGURE 17. RESISTIVE SWITCHING TEST CIRCUIT
Typical Performance Curves
(Continued)
t
AV
, TIME IN AVALANCHE (ms)
0.01
0.1
1
10
1
10
14
20
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
STARTING T
J
= +150
o
C
STARTING T
J
= +25
o
C
I
AS
,
A
V
ALANCHE CURRENT (A)
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
t
P
V
GS
0.01
L
I
L
-
+
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
t
ON
t
D(ON)
t
R
90%
10%
V
DS
90%
10%
t
F
t
D(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
V
DD
V
DS
V
GS
0V
R
GS
DUT
R
GS