1
File Number
3411.3
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
RHRG30120CC
30A, 1200V Hyperfast Dual Diode
The RHRG30120CC is a hyperfast dual diode with soft
recovery characteristics (t
rr
< 65ns). It has half the recovery
time of ultrafast diodes and is of silicon nitride passivated
ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of high frequency switching
power supplies and other power switching applications. Its
low stored charge and hyperfast soft recovery minimize
ringing and electrical noise in many power switching circuits,
thus reducing power loss in the switching transistors.
Formerly developmental type TA49041.
Symbol
Features
Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . <65ns
Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
C
Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V
Avalanche Energy Rated
Planar Construction
Applications
Switching Power Supplies
Power Switching Circuits
General Purpose
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER
PACKAGE
BRAND
RHRG30120CC
TO-247
RHR30120C
NOTE: When ordering, use the entire part number.
K
A
1
A
2
CATHODE
(BOTTOM SIDE
ANODE 2
CATHODE
ANODE 1
METAL)
Absolute Maximum Ratings
(Per Leg) T
C
= 25
o
C
RHRG30120CC
UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
1200
V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
1200
V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
1200
V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
30
V
(T
C
= 78
o
C)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
60
V
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
300
V
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
125
W
Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
30
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
-65 to 175
o
C
Data Sheet
January 2000
2
Electrical Specifications
(Per Leg) T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
V
F
I
F
= 30A
-
-
3.2
V
I
F
= 30A, T
C
= 150
o
C
-
-
2.6
V
I
R
V
R
= 1200V
-
-
250
A
V
R
= 1200V, T
C
= 150
o
C
-
-
1
mA
t
rr
I
F
= 1A, dI
F
/dt = 100A/
s
-
-
65
ns
I
F
= 30A, dI
F
/dt = 100A/
s
-
-
75
ns
t
a
I
F
= 30A, dI
F
/dt = 100A/
s
-
48
-
ns
t
b
I
F
= 30A, dI
F
/dt = 100A/
s
-
22
-
ns
R
JC
-
-
1.2
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
s, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 6), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 6).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 6).
R
JC
= Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
200
100
10
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
F
, FORWARD VOLTAGE (V)
I
F
, FOR
W
ARD CURRENT (A)
175
o
C
100
o
C
25
o
C
500
175
o
C
100
10
1
0.1
0.01
0.001
0
200
400
600
800
1000
1200
100
o
C
25
o
C
V
R
, REVERSE VOLTAGE (V)
I
R
, REVERSE CURRENT (
A)
RHRG30120CC
3
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 4. CURRENT DERATING CURVE
Typical Performance Curves
(Continued)
100
75
50
25
0
1
10
30
t, TIME (ns)
I
F
, FORWARD CURRENT (A)
trr
ta
tb
40
30
20
10
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATE (
o
C)
DC
SQ. WAVE
I
F(A
V)
, A
VERA
GE FOR
W
ARD CURRENT (A)
Test Circuits and Waveforms
FIGURE 5. t
rr
TEST CIRCUIT
FIGURE 6. t
rr
WAVEFORMS AND DEFINITIONS
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 8. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
R
G
L
V
DD
IGBT
CURRENT
SENSE
DUT
V
GE
t
1
t
2
V
GE
AMPLITUDE AND
t
1 AND
t
2
CONTROL I
F
R
G
CONTROL dI
F
/dt
+
-
dt
dI
F
I
F
trr
ta
tb
0
I
RM
0.25 I
RM
DUT
CURRENT
SENSE
+
L
R
V
DD
R < 0.1
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
-
V
DD
Q
1
I
MAX
= 1.225A
L = 40mH
I V
t
0
t
1
t
2
I
L
V
AVL
t
I
L
RHRG30120CC
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