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Электронный компонент: RHRG50120

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RHRG50120
50A, 1200V Hyperfast Diode
The RHRG50120 is a hyperfast diode with soft recovery
characteristics (t
rr
< 85ns). It has half the recovery time of
ultrafast diodes and is of silicon nitride passivated
ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored charge
and hyperfast soft recovery minimize ringing and electrical
noise in many power switching circuits, thus reducing power
loss in the switching transistors.
Formerly developmental type TA49100.
Symbol
Features
Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . <85ns
Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
C
Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V
Avalanche Energy Rated
Planar Construction
Applications
Switching Power Supplies
Power Switching Circuits
General Purpose
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER
PACKAGE
BRAND
RHRG50120
TO-247
RHRG50120
NOTE: When ordering, use the entire part number.
K
A
(BOTTOM
SIDE METAL)
CATHODE
ANODE
CATHODE
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RHRG50120
UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
1200
V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
1200
V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
1200
V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
T
C
= 50
o
C
50
A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
Square Wave, 20kHz
100
A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
Halfwave, 1 Phase, 60Hz
500
A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
150
W
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
50
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
-65 to 175
o
C
Data Sheet
January 2000
File Number
3947.3
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
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2
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
V
F
I
F
= 50A
-
-
3.2
V
I
F
= 50A, T
C
= 150
o
C
-
-
2.6
V
I
R
V
R
= 1200V
-
-
500
A
V
R
= 1200V, T
C
= 150
o
C
-
-
1.0
mA
t
rr
I
F
= 1A, dI
F
/dt = 200A/
s
-
-
85
ns
I
F
= 50A, dI
F
/dt = 200A/
s
-
-
100
ns
t
a
I
F
= 50A, dI
F
/dt = 200A/
s
-
50
-
ns
t
b
I
F
= 50A, dI
F
/dt = 200A/
s
-
35
-
ns
Q
RR