1
RHRP8120
8A, 1200V Hyperfast Diode
The RHRP8120 is a hyperfast diodes with soft recovery
characteristics (t
rr
< 55ns). It has half the recovery time of
ultrafast diodes and is of silicon nitride passivated
ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored charge
and hyperfast soft recovery minimize ringing and electrical
noise in many power switching circuits, thus reducing power
loss in the switching transistors.
Formerly developmental type TA49096.
Symbol
Features
Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . <55ns
Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
C
Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V
Avalanche Energy Rated
Planar Construction
Applications
Switching Power Supplies
Power Switching Circuits
General Purpose
Packaging
JEDEC TO-220AC
Ordering Information
PART NUMBER
PACKAGE
BRAND
RHRP8120
TO-220AC
RHRP8120
NOTE: When ordering, use the entire part number.
K
A
CATHODE
ANODE
CATHODE
(FLANGE)
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RHRP8120
UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
1200
V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
1200
V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
1200
V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
F(AV)
(T
C
= 140
o
C)
8
A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave, 20kHz)
16
A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
100
A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
75
W
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
20
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
-65 to 175
o
C
Data Sheet
January 2000
File Number
3660.2
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
2
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
V
F
I
F
= 8A
-
-
3.2
V
I
F
= 8A, T
C
= 150
o
C
-
-
2.6
V
I
R
V
R
= 1200V
-
-
100
A
V
R
= 1200V, T
C
= 150
o
C
-
-
500
A
t
rr
I
F
= 1A, dI
F
/dt = 200A/
s
-
-
55
ns
I
F
= 8A, dI
F
/dt = 200A/
s
-
-
70
ns
t
a
I
F
= 8A, dI
F
/dt = 200A/
s
-
30
-
ns
t
b
I
F
= 8A, dI
F
/dt = 200A/
s
-
20
-
ns
Q
RR
I
F
= 8A, dI
F
/dt = 200A/
s
-
165
-
nC
C
J
V
R
= 10V, I
F
= 0A
-
25
-
pF
R
JC
-
-
2
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
s, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
RR
= Reverse Recovery Charge.
C
J
= Junction Capacitance.
R
JC
= Thermal resistance junction to case.
pw = Pulse Width.
D = Duty Cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
V
F
, FORWARD VOLTAGE (V)
I
F,
FOR
W
ARD CURRENT (A)
1
40
0.5
10
0
1
2
3
5
4
25
o
C
100
o
C
175
o
C
V
R
, REVERSE VOLTAGE (V)
0
400
800
1200
600
1000
500
0.01
0.1
1
10
I
R
, REVERSE CURRENT (
A)
200
0.001
25
o
C
100
o
C
175
o
C
100
RHRP8120
3
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 4. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 5. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Typical Performance Curves
(Continued)
I
F
, FORWARD CURRENT (A)
0.5
0
40
10
8
1
20
30
t
,
RECO
VER
Y TIMES (ns)
4
t
b
50
t
rr
t
a
60
T
C
= 25
o
C, dI
F
/dt = 200A/
s
20
40
60
t
,
RECO
VER
Y TIMES (ns)
I
F
, FORWARD CURRENT (A)
0.5
0
8
1
4
80
t
a
t
rr
100
t
b
T
C
= 100
o
C, dI
F
/dt = 200A/
s
100
80
60
t
,
RECO
VER
Y TIMES (ns)
I
F
, FORWARD CURRENT (A)
0.5
0
8
1
4
t
a
40
120
t
rr
t
b
20
T
C
= 175
o
C, dI
F
/dt = 200A/
s
10
2
0
100
115
145
175
160
4
6
8
130
DC
SQ. WAVE
I
F(A
V)
, A
VERA
GE FOR
W
ARD CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
V
R
, REVERSE VOLTAGE (V)
20
100
0
40
0
50
100
150
200
80
60
C
J
, JUNCTION CAP
A
CIT
ANCE (pF)
RHRP8120
4
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Test Circuits and Waveforms
FIGURE 8. t
rr
TEST CIRCUIT
FIGURE 9. t
rr
WAVEFORMS AND DEFINITIONS
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
R
G
L
V
DD
IGBT
CURRENT
SENSE
DUT
V
GE
t
1
t
2
V
GE
AMPLITUDE AND
t
1 AND
t
2
CONTROL I
F
R
G
CONTROL dI
F
/dt
+
-
dt
dI
F
I
F
trr
ta
tb
0
I
RM
0.25 I
RM
DUT
CURRENT
SENSE
+
L
R
V
DD
R < 0.1
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
-
V
DD
Q
1
I
MAX
= 1A
L = 40mH
I V
t
0
t
1
t
2
I
L
V
AVL
t
I
L
RHRP8120
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