1
RHRU5070, RHRU5080, RHRU5090, RHRU50100
50A, 700V - 1000V Hyperfast Diodes
RHRU5070, RHRU5080, RHRU5090 and RHRU50100
(TA49066) are hyperfast diodes with soft recovery character-
istics (t
RR
< 75ns). They have half the recovery time of
ultrafast diodes and are silicon nitride passivated ion-
implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamp-
ing diodes and rectifiers in a variety of switching power sup-
plies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reduc-
ing power loss in the switching transistors.
Ordering Information
Features
Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<75ns
Operating Temperature . . . . . . . . . . . . . . . . . . . +175
o
C
Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . .1000V
Avalanche Energy Rated
Planar Construction
Applications
Switching Power Supplies
Power Switching Circuits
General Purpose
Package
JEDEC STYLE TO-218
Symbol
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RHRU5070
TO-218
RHRU5070
RHRU5080
TO-218
RHRU5080
RHRU5090
TO-218
RHRU5090
RHRU50100
TO-218
RHRU50100
NOTE: When ordering, use the entire part number.
CATHODE
(FLANGE)
ANODE
K
A
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
RHRU5070
RHRU5080
RHRU5090 RHRU50100 UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
700
800
900
1000
V
Working Peak Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
700
800
900
1000
V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
700
800
900
1000
V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= +65
o
C)
50
50
50
50
A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Square Wave, 20kHz)
100
100
100
100
A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
500
500
500
500
A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
150
150
150
150
W
Avalanche Energy (L = 40mH) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
40
40
40
40
mj
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
-65 to +175
-65 to +175
-65 to +175
-65 to +175
o
C
Data Sheet
April 1995
File Number
3665.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
2
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITION
RHRU5070
RHRU5080
RHRU5090
RHRU50100
UNITS
MIN
TYP
MAX
MIN
TYP
MAX
MIN
TYP
MAX
MIN
TYP
MAX
V
F
I
F
= 50A, T
C
= +25
o
C
-
-
3.0
-
-
3.0
-
-
3.0
-
-
3.0
V
I
F
= 50A, T
C
= +150
o
C
-
-
2.5
-
-
2.5
-
-
2.5
-
-
2.5
V
I
R
V
R
= 700V, T
C
= +25
o
C
-
-
500
-
-
-
-
-
-
-
-
-
A
V
R
= 800V, T
C
= +25
o
C
-
-
-
-
-
500
-
-
-
-
-
-
A
V
R
= 900V, T
C
= +25
o
C
-
-
-
-
-
-
-
-
500
-
-
-
A
V
R
= 1000V, T
C
= +25
o
C
-
-
-
-
-
-
-
-
-
-
-
500
A
I
R
V
R
= 700V, T
C
= +150
o
C
-
-
3.0
-
-
-
-
-
-
-
-
-
mA
V
R
= 800V, T
C
= +150
o
C
-
-
-
-
-
3.0
-
-
-
-
-
-
mA
V
R
= 900V, T
C
= +150
o
C
-
-
-
-
-
-
-
-
3.0
-
-
-
mA
V
R
= 1000V, T
C
= +150
o
C
-
-
-
-
-
-
-
-
-
-
-
3.0
mA
t
RR
I
F
= 1A, dI
F
/dt = 100A/
s
-
-
75
-
-
75
-
-
75
-
-
75
ns
I
F
= 50A, dI
F
/dt = 100A/
s
-
-
95
-
-
95
-
-
95
-
-
95
ns
t
A
I
F
= 50A, dI
F
/dt = 100A/
s
-
54
-
-
54
-
-
54
-
-
54
-
ns
t
B
I
F
= 50A, dI
F
/dt = 100A/
s
-
32
-
-
32
-
-
32
-
-
32
-
ns
Q
RR
I
F
= 50A, dI
F
/dt = 100A/
s
-
125
-
-
125
-
-
125
-
-
125
-
nC
C
J
V
R
= 10V, I
F
= 0A
-
150
-
-
150
-
-
150
-
-
150
-
pF
R
JC
-
-
1.0
-
-
1.0
-
-
1.0
-
-
1.0
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
s, D = 2%).
I
R
= Instantaneous reverse current.
t
RR
= Reverse recovery time (Figure 2), summation of t
A
+ t
B
.
t
A
= Time to reach peak reverse current (See Figure 2).
t
B
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 2).
R
JC
= Thermal resistance junction to case.
E
AVL
= Controlled avalanche energy (See Figure 10 and Figure 11).
pw = Pulse width.
D = Duty cycle.
FIGURE 1. t
RR
TEST CIRCUIT
FIGURE 2. WAVEFORMS AND DEFINITIONS
C1
L
LOOP
DUT
Q
3
R
3
Q
4
Q
2
R
1
R
2
-V
4
Q
1
-V
2
0
0
+V
1
t
1
t
2
t
3
R
4
+V
3
V
1
AMPLITUDE CONTROLS I
F
V
2
AMPLITUDE CONTROLS dI
F
/dt
L
1
= SELF INDUCTANCE OF
t
1
5t
A(MAX)
t
2
> t
RR
t
3
> 0
L
1
R
4
t
A(MIN)
10
R
4
+ L
LOOP
I
F
t
RR
t
A
t
B
0
I
RM
0.25 I
RM
V
R
V
RM
dI
F
dt
RHRU5070, RHRU5080, RHRU5090, RHRU50100
3
Typical Performance Curves
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLT-
AGE
FIGURE 5. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT AT +25
o
C
FIGURE 6. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT AT +100
o
C
FIGURE 7. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT AT +175
o
C
FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES
V
F
, FORWARD VOLTAGE - (V)
I
F
, FOR
W
ARD CURRENT - (A)
1
250
100
10
0
0.5
1
1.5
2
2.5
3
3.5
4
+175
o
C
+100
o
C
+25
o
C
V
R
, REVERSE VOLTAGE - (V)
0
200
400
600
800
3000
100
0.01
0.1
1
10
I
R
, REVERSE CURRENT - (
A)
1000
1000
+175
o
C
+25
o
C
+100
o
C
I
F
, FORWARD CURRENT - (A)
t
,
RECO
VER
Y TIMES - (ns)
50
0
40
10
100
10
1
t
B
60
80
t
A
t
RR
T
C
= +25
o
C
t
,
RECO
VER
Y TIMES - (ns)
I
F
, FORWARD CURRENT - (A)
50
10
1
0
50
200
100
150
t
RR
t
A
t
B
T
C
= +100
o
C
t
,
RECO
VER
Y TIMES - (ns)
I
F
, FORWARD CURRENT - (A)
50
10
1
0
100
400
200
300
t
RR
t
A
t
B
T
C
= +175
o
C
50
10
0
25
50
100
150
175
125
20
30
40
T
C
, CASE TEMPERATURE - (
o
C)
I
F
(A
V)
, A
VERA
GE FOR
W
ARD CURRENT - (A)
75
DC
SQ. WAVE
RHRU5070, RHRU5080, RHRU5090, RHRU50100
4
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Test Circuit and Waveforms
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVE-
FORMS
Typical Performance Curves
(Continued)
V
R
, REVERSE VOLTAGE (V)
100
500
0
200
0
50
100
150
200
400
300
C
J
, JUNCTION CAP
A
CIT
ANCE (pF)
+
12V
12V
1M
DUT
130
130
Q1
Q2
CURRENT
SENSE
V
DD
R
L
-
I
MAX
= 1A
L = 40mH
R < 0.1
E
AVL
= 1/2LI
2
[V
AVL
/(V
AVL
- V
DD
)]
Q1 AND Q2 ARE 1000V MOSFETS
I V
t
0
t
1
t
2
I
L
V
AVL
t
RHRU5070, RHRU5080, RHRU5090, RHRU50100
PDF 
ZIP