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RHRU7570, RHRU7580, RHRU7590, RHRU75100
75A, 700V - 1000V Hyperfast Diodes
RHRU7570, RHRU7580, RHRU7590 and RHRU75100
(TA49068) are hyperfast diodes with soft recovery character-
istics (t
RR
< 85ns). They have half the recovery time of
ultrafast diodes and are silicon nitride passivated ion-
implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamp-
ing diodes and rectifiers in a variety of switching power sup-
plies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reduc-
ing power loss in the switching transistors.
Ordering Information
Features
Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<85ns
Operating Temperature . . . . . . . . . . . . . . . . . . . +175
o
C
Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . .1000V
Avalanche Energy Rated
Planar Construction
Applications
Switching Power Supplies
Power Switching Circuits
General Purpose
Package
JEDEC STYLE TO-218
Symbol
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RHRU7570
TO-218
RHRU7570
RHRU7580
TO-218
RHRU7580
RHRU7590
TO-218
RHRU7590
RHRU75100
TO-218
RHRU75100
NOTE: When ordering, use the entire part number.
ANODE
CATHODE
(FLANGE)
K
A
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
RHRU7570
RHRU7580
RHRU7590 RHRU75100 UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
700
800
900
1000
V
Working Peak Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
700
800
900
1000
V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
700
800
900
1000
V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= +52
o
C)
75
75
75
75
A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Square Wave, 20kHz)
150
150
150
150
A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
750
750
750
750
A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
190
190
190
190
W
Avalanche Energy (L = 40mH) (See Figures 10 and 11) . . . . . . . . . . E
AVL
50
50
50
50
mj
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
-65 to +175
-65 to +175
-65 to +175
-65 to +175
o
C
Data Sheet
April 1995
File Number
3925.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
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Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITION
RHRU7570
RHRU7580
RHRU7590
RHRU75100
UNITS
MIN
TYP
MAX
MIN
TYP
MAX
MIN
TYP
MAX
MIN
TYP
MAX
V
F
I
F
= 75A, T
C
= +25
o
C
-
-
3.0
-
-
3.0
-
-
3.0
-
-
3.0
V
I
F
= 75A, T
C
= +150
o
C
-
-
2.5
-
-
2.5
-
-
2.5
-
-
2.5
V
I
R
V
R
= 700V, T
C
= +25
o
C
-
-
500
-
-
-
-
-
-
-
-
-
A
V
R
= 800V, T
C
= +25
o
C
-
-
-
-
-
500
-
-
-
-
-
-
A
V
R
= 900V, T
C
= +25
o
C
-
-
-
-
-
-
-
-
500
-
-
-
A
V
R
= 1000V, T
C
= +25
o
C
-
-
-
-
-
-
-
-
-
-
-
500
A
I
R
V
R
= 700V, T
C
= +150
o
C
-
-
2.0
-
-
-
-
-
-
-
-
-
mA
V
R
= 800V, T
C
= +150
o
C
-
-
-
-
-
2.0
-
-
-
-
-
-
mA
V
R
= 900V, T
C
= +150
o
C
-
-
-
-
-
-
-
-
2.0
-
-
-
mA
V
R
= 1000V, T
C
= +150
o
C
-
-
-
-
-
-
-
-
-
-
-
2.0
mA
t
RR
I
F
= 1A, dI
F
/dt = 100A/
s
-
-
85
-
-
85
-
-
85
-
-
85
ns
I
F
= 75A, dI
F
/dt = 100A/
s
-
-
100
-
-
100
-
-
100
-
-
100
ns
t
A
I
F
= 75A, dI
F
/dt = 100A/
s
-
55
-
-
55
-
-
55
-
-
55
-
ns
t
B
I
F
= 75A, dI
F
/dt = 100A/
s
-
40
-
-
40
-
-
40
-
-
40
-
ns
Q
RR
I
F
= 75A, dI
F
/dt = 100A/
s
-
240
-
-
240
-
-
240
-
-
240
-
nC
C
J
V
R
= 10V, I
F
= 0A
-
220
-
-
220
-
-
220
-
-
220
-
pF
R
JC
-
-
0.8
-
-
0.8
-
-
0.8
-
-
0.8
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
s, D = 2%).
I
R
= Instantaneous reverse current.
t
RR
= Reverse recovery time (Figure 2), summation of t
A
+ t
B
.
t
A
= Time to reach peak reverse current (See Figure 2).
t
B
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 2).
Q
RR
= Reverse recovery charge.
C
J
= Junction capacitance.
R
JC
= Thermal resistance junction to case.
E
AVL
= Controlled avalanche energy. (See Figures 10 and 11).
pw = pulse width.
D = duty cycle.
FIGURE 1. t
RR
TEST CIRCUIT
FIGURE 2. t
RR
WAVEFORMS AND DEFINITIONS
C1
L
LOOP
DUT
Q
3
R
3
Q
4
Q
2
R
1
R
2
-V
4
Q
1
-V
2
0
0
+V
1
t
1
t
2
t
3
R
4
+V
3
V
1
AMPLITUDE CONTROLS I
F
V
2
AMPLITUDE CONTROLS dI
F
/dt
L
1
= SELF INDUCTANCE OF
t
1
5t
A(MAX)
t
2
> t
RR
t
3
> 0
L
1
R
4
t
A(MIN)
10
R
4
+ L
LOOP
dt
dI
F
I
F
t
RR
t
A
t
B
0
I
RM
0.25 I
RM
V
R
V
RM
RHRU7570, RHRU7580, RHRU7590, RHRU75100
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Typical Performance Curves
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE
VOLTAGE
FIGURE 5. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT AT +25
o
C
FIGURE 6. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT AT +100
o
C
FIGURE 7. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT AT +175
o
C
FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES
V
F
, FORWARD VOLTAGE (V)
I
F
, FOR
W
ARD CURRENT (A)
1
100
10
0
1
2
3
+175
o
C
+100
o
C
400
4
5
+25
o
C
V
R
, REVERSE VOLTAGE (V)
0
200
400
600
800
1000
100
0.01
0.1
1
10
I
R
, REVERSE CURRENT (
A)
1000
+175
o
C
+100
o
C
+25
o
C
T
C
= +25
o
C
t
RR
I
F
, FORWARD CURRENT (A)
t, RECO
VER
Y TIMES (ns)
75
0
100
10
1
t
B
80
t
A
60
40
20
t, RECO
VER
Y TIMES (ns)
I
F
, FORWARD CURRENT (A)
75
10
1
0
50
200
100
150
t
RR
t
A
t
B
T
C
= +100
o
C
300
250
T
C
= +175
o
C
I
F
, FORWARD CURRENT (A)
t, RECO
VER
Y TIMES (ns)
75
0
500
10
1
400
300
200
100
t
RR
t
B
t
A
75
15
0
25
50
100
150
175
125
30
45
60
T
C
, CASE TEMPERATURE (
o
C)
I
F(A
V)
, A
VERA
GE FOR
W
ARD CURRENT (A)
75
SQ. WAVE
DC
RHRU7570, RHRU7580, RHRU7590, RHRU75100
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All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
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P. O. Box 883, Mail Stop 53-204
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Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Typical Performance Curves
(Continued)
V
R
, REVERSE VOLTAGE (V)
100
500
0
200
0
50
100
150
200
400
300
C
J
, JUNCTION CAP
A
CIT
ANCE (pF)
600
700
800
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVE-
FORMS
12V
Q
2
Q
1
12V
130
DUT
CURRENT
SENSE
+
L
R
1M
V
DD
130
I
MAX
= 1A
L = 40mH
R < 0.1
E
AVL
= 1/2LI
2
[V
AVL
/(V
AVL
- V
DD
)]
Q
1
AND Q
2
ARE 1000V MOSFETs
-
V
DD
I V
t
0
t
1
t
2
I
L
V
AVL
t
I
L
RHRU7570, RHRU7580, RHRU7590, RHRU75100
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