1
RHRU7540, RHRU7550, RHRU7560
75A, 400V - 600V Hyperfast Diodes
RHRU7540, RHRU7550 and RHRU7560 (TA49067) are
hyperfast
diodes
with
soft
recovery
characteristics
(t
RR
< 55ns). They have half the recovery time of ultrafast
diodes and are silicon nitride passivated ion-implanted epi-
taxial planar construction.
These devices are intended for use as freewheeling/clamp-
ing diodes and rectifiers in a variety of switching power sup-
plies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reduc-
ing power loss in the switching transistors.
Ordering Information
Features
Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<55ns
Operating Temperature . . . . . . . . . . . . . . . . . . . +175
o
C
Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . .600V
Avalanche Energy Rated
Planar Construction
Applications
Switching Power Supplies
Power Switching Circuits
General Purpose
Package
SINGLE LEAD JEDEC STYLE TO-218
Symbol
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RHRU7540
TO-218
RHRU7540
RHRU7550
TO-218
RHRU7550
RHRU7560
TO-218
RHRU7560
NOTE: When ordering, use the entire part number.
CATHODE
(FLANGE)
ANODE
K
A
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
RHRU7540
RHRU7550
RHRU7560
UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
400
500
600
V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
RWM
400
500
600
V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
400
500
600
V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= +80
o
C)
75
75
75
A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Square Wave, 20kHz)
150
150
150
A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
750
750
750
A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
190
190
190
W
Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . E
AVL
50
50
50
mj
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . .T
STG
, T
J
-65 to +175
-65 to +175
-65 to +175
o
C
Data Sheet
April 1995
File Number
3945.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
2
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITION
RHRU7540
RHRU7550
RHRU7560
UNITS
MIN
TYP
MAX
MIN
TYP
MAX
MIN
TYP
MAX
V
F
I
F
= 75A, T
C
= +25
o
C
-
-
2.1
-
-
2.1
-
-
2.1
V
I
F
= 75A, T
C
= +150
o
C
-
-
1.7
-
-
1.7
-
-
1.7
V
I
R
V
R
= 400V, T
C
= +25
o
C
-
-
500
-
-
-
-
-
-
A
V
R
= 500V, T
C
= +25
o
C
-
-
-
-
-
500
-
-
-
A
V
R
= 600V, T
C
= +25
o
C
-
-
-
-
-
-
-
-
500
A
I
R
V
R
= 400V, T
C
= +150
o
C
-
-
2.0
-
-
-
-
-
-
mA
V
R
= 500V, T
C
= +150
o
C
-
-
-
-
-
2.0
-
-
-
mA
V
R
= 600V, T
C
= +150
o
C
-
-
-
-
-
-
-
-
2.0
mA
t
RR
I
F
= 1A, dI
F
/dt = 100A/
s
-
-
55
-
-
55
-
-
55
ns
I
F
= 75A, dI
F
/dt = 100A/
s
-
-
60
-
-
60
-
-
60
ns
t
A
I
F
= 75A, dI
F
/dt = 100A/
s
-
35
-
-
35
-
-
35
-
ns
t
B
I
F
= 75A, dI
F
/dt = 100A/
s
-
18
-
-
18
-
-
18
-
ns
Q
RR
I
F
= 75A, dI
F
/dt = 100A/
s
-
90
-
-
90
-
-
90
-
nC
C
J
V
R
= 10V, I
F
= 0A
-
200
-
-
200
-
-
200
-
pF
R
JC
-
-
0.8
-
-
0.8
-
-
0.8
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
s, D = 2%).
I
R
= Instantaneous reverse current.
t
RR
= Reverse recovery time (See Figure 2), summation of t
A
+ t
B
.
t
A
= Time to reach peak reverse current (See Figure 2).
t
B
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 2).
Q
RR
= Reverse recovery charge.
C
J
= Junction Capacitance.
R
JC
= Thermal resistance junction to case.
E
AVL
= Controlled avalanche energy. (See Figures 10 and 11).
pw = pulse width.
D = duty cycle.
FIGURE 1. t
RR
TEST CIRCUIT
FIGURE 2. t
RR
WAVEFORMS AND DEFINITIONS
C1
L
LOOP
DUT
Q
3
R
3
Q
4
Q
2
R
1
R
2
-V
4
Q
1
-V
2
0
0
+V
1
t
1
t
2
t
3
R
4
+V
3
V
1
AMPLITUDE CONTROLS I
F
V
2
AMPLITUDE CONTROLS dI
F
/dt
L
1
= SELF INDUCTANCE OF
t
1
5t
A(MAX)
t
2
> t
RR
t
3
> 0
L
1
R
4
t
A(MIN)
10
R
4
+ L
LOOP
dt
dI
F
I
F
t
RR
t
A
t
B
0
I
RM
0.25 I
RM
V
R
V
RM
RHRU7540, RHRU7550, RHRU7560
3
Typical Performance Curves
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE
VOLTAGE
FIGURE 5. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT AT +25
o
C
FIGURE 6. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT AT +100
o
C
FIGURE 7. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT AT +175
o
C
FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES
V
F
, FORWARD VOLTAGE (V)
I
F
, FOR
W
ARD CURRENT (A)
1
100
10
0
0.5
1.0
1.5
2.0
2.5
3.0
+25
o
C
+175
o
C
+100
o
C
300
V
R
, REVERSE VOLTAGE (V)
0
200
400
600
300
500
1000
0.01
0.1
1
10
100
100
+25
o
C
+100
o
C
+175
o
C
5000
I
R
, REVERSE CURRENT (
A)
I
F
, FORWARD CURRENT (A)
60
0
20
10
1
30
50
T
C
= +25
o
C
t
,
RECO
VER
Y TIMES (ns)
75
t
B
40
10
t
RR
t
A
t
B
T
C
= +100
o
C
I
F
, FORWARD CURRENT (A)
125
0
50
25
75
1
100
t
,
RECO
VER
Y TIMES (ns)
10
75
150
t
RR
t
A
T
C
= +175
o
C
I
F
, FORWARD CURRENT (A)
250
0
50
75
1
200
t
,
RECO
VER
Y TIMES (ns)
10
t
B
100
150
t
RR
t
A
75
15
0
75
125
175
150
30
45
60
T
C
, CASE TEMPERATURE (
o
C)
I
F(A
V)
, A
VERA
GE FOR
W
ARD CURRENT (A)
100
DC
SQ. WAVE
50
25
RHRU7540, RHRU7550, RHRU7560
4
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Test Circuit and Waveforms
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORM
Typical Performance Curves
(Continued)
V
R
, REVERSE VOLTAGE (V)
200
100
0
400
0
50
100
150
200
600
C
J
, JUNCTION CAP
A
CIT
ANCE (pF)
300
500
12V
Q
2
Q
1
12V
130
DUT
CURRENT
SENSE
+
L
R
1M
V
DD
130
I
MAX
= 1A
L = 40mH
R < 0.1
E
AVL
= 1/2LI
2
[V
AVL
/(V
AVL
- V
DD
)]
Q
1
AND Q
2
ARE 1000V MOSFETs
-
V
DD
I V
t
0
t
1
t
2
I
L
V
AVL
t
I
L
RHRU7540, RHRU7550, RHRU7560
PDF 
ZIP