3-173
File Number
1355.5
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
MUR820, RURP820
8A, 200V Ultrafast Diodes
MUR820 and RURP820 are ultrafast diodes with soft
recovery characteristics (t
rr
< 25ns). They have low forward
voltage drop and are silicon nitride passivated ion-implanted
epitaxial planar construction.
These devices are intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and ultrafast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Formerly developmental type TA09223.
Symbol
Features
Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <25ns
Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
C
Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .200V
Avalanche Energy Rated
Planar Construction
Applications
Switching Power Supplies
Power Switching Circuits
General Purpose
Packaging
JEDEC TO-220AC
Ordering Information
PART NUMBER
PACKAGE
BRAND
MUR820
TO-220AC
MUR820
RURP820
TO-220AC
RURP820
NOTE: When ordering, use the entire part number.
K
A
ANODE
CATHODE
CATHODE
(FLANGE)
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
MUR820
RURP820
UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
200
V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
RWM
200
V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
200
V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= 157
o
C)
8
A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave, 20kHz)
16
A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
100
A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
50
W
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AVL
20
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
-65 to 175
o
C
Data Sheet
January 2000
3-174
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
V
F
I
F
= 8A
-
-
0.975
V
I
F
= 8A, T
C
= 150
o
C
-
-
0.895
V
I
R
V
R
= 200V
-
-
100
A
V
R
= 200V, T
C
= 150
o
C
-
-
500
A
t
rr
I
F
= 1A, dI
F
/dt = 200A/
s
-
-
25
ns
I
F
= 8A, dI
F
/dt = 200A/
s
-
-
30
ns
t
a
I
F
= 8A, dI
F
/dt = 200A/
s
-
13
-
ns
t
b
I
F
= 8A, dI
F
/dt = 200A/
s
-
5
-
ns
Q
RR
I
F
= 8A, dI
F
/dt = 200A/
s
-
25
-
nC
C
J
V
R
= 10V, I
F
= 0A
-
60
-
pF
R
JC
-
-
3
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
s, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
RR
= Reverse recovery charge.
C
J
= Junction Capacitance.
R
JC
= Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
V
F
, FORWARD VOLTAGE (V)
I
F
, FOR
W
ARD CURRENT (A)
1
40
0.5
10
0
0.2
0.4
0.6
0.8
1
175
o
C
25
o
C
100
o
C
1.2
1.4
V
R
, REVERSE VOLTAGE (V)
0
200
100
150
100
0.001
0.01
0.1
50
10
175
o
C
100
o
C
25
o
C
I
R
, REVERSE CURRENT (
A)
MUR820, RURP820
3-175
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 4. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 5. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Typical Performance Curves
(Continued)
t
rr
I
F
, FORWARD CURRENT (A)
1
0
20
16
0.5
8
12
4
t, RECO
VER
Y TIMES (ns)
t
a
t
b
8
4
T
C
= 25
o
C, dI
F
/dt = 200A/
s
5
10
15
t
b
0.5
0
8
1
4
20
t
a
t
rr
35
I
F
, FORWARD CURRENT (A)
t, RECO
VER
Y TIMES (ns)
25
30
T
C
= 100
o
C, dI
F
/dt = 200A/
s
10
20
30
t
b
0.5
0
8
1
4
40
t
a
t
rr
50
I
F
, FORWARD CURRENT (A)
t, RECO
VER
Y TIMES (ns)
T
C
= 175
o
C, dI
F
/dt = 200A/
s
2
0
140
145
155
175
165
4
6
8
T
C
, CASE TEMPERATURE (
o
C)
I
F(A
V)
, A
VERA
GE FOR
W
ARD CURRENT (A)
150
DC
SQ. WAVE
160
170
V
R
, REVERSE VOLTAGE (V)
75
0
125
0
50
100
150
200
100
50
C
J
, JUNCTION CAP
A
CIT
ANCE (pF)
150
25
MUR820, RURP820
3-176
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Test Circuits and Waveforms
FIGURE 8. t
rr
TEST CIRCUIT
FIGURE 9. t
rr
WAVEFORMS AND DEFINITIONS
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
R
G
L
V
DD
IGBT
CURRENT
SENSE
DUT
V
GE
t
1
t
2
V
GE
AMPLITUDE AND
t
1 AND
t
2
CONTROL I
F
R
G
CONTROL dI
F
/dt
+
-
dt
dI
F
I
F
trr
ta
tb
0
I
RM
0.25 I
RM
DUT
CURRENT
SENSE
+
L
R
V
DD
R < 0.1
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
-
V
DD
Q
1
I = 1A
L = 40mH
I V
t
0
t
1
t
2
I
L
V
AVL
t
I
L
MUR820, RURP820
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