SCHOTTKY RECTIFIER
2.1 Amp
10MQ060N
1
Major Ratings and Characteristics
I
F
DC
2.1
A
V
RRM
60
V
I
FSM
@ tp = 5 s sine
40
A
V
F
@
1.5Apk, T
J
=125C
0.63
V
T
J
range
- 55 to 150
C
Characteristics
Value
Units
The 10MQ060N surface mount Schottky rectifier has been
designed for applications requiring low forward drop and very
small foot prints on PC boards. Typical applications are in disk
drives, switching power supplies, converters, free-wheeling
diodes, battery charging, and reverse battery protection.
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Description/ Features
www.irf.com
Case Styles
10MQ060N
SMA
I
F(AV)
= 2.1Amp
V
R
= 60V
Bulletin PD-20519 rev. L 0
7/04
10MQ060N
Bulletin PD-20519 rev. L 0
7/04
2
www.irf.com
Part number
10MQ060N
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
60
Voltage Ratings
V
FM
Max. Forward Voltage Drop (1)
0.63
V
@ 1A
* See Fig. 1
0.71
V
@ 1.5A
0.57
V
@ 1A
0.63
V
@ 1.5A
I
RM
Max. Reverse Leakage Current (1)
0.5
mA
T
J
= 25 C
* See Fig. 2
7.5
mA
T
J
= 125 C
V
F(TO)
Threshold Voltage
0.45
V
T
J
= T
J
max.
r
t
Forward Slope Resistance
86.8
m
C
T
Typical Junction Capacitance
31
pF
V
R
= 10V
DC
, T
J
= 25C, test signal = 1Mhz
L
S
Typical Series Inductance
2.0
nH
Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
10000
V/s
(Rated V
R
)
T
J
= 25 C
T
J
= 125 C
V
R
= rated V
R
Electrical Specifications
Parameters
10MQ Units
Conditions
(1) Pulse Width < 300s, Duty Cycle < 2%
T
J
Max. Junction Temperature Range (*) -55 to 150
C
T
stg
Max. Storage Temperature Range
- 55 to 150
C
R
thJA
Max. Thermal Resistance Junction
80
C/W DC operation
to Ambient
wt
Approximate Weight
0.07(0.002) g (oz.)
Case Style
SMA
Similar D-64
Device Marking
IR1H
Thermal-Mechanical Specifications
Parameters
10MQ Units
Conditions
Absolute Maximum Ratings
I
F(AV)
Max. Average Forward Current
1.5
A
50% duty cycle @ T
L
= 120 C, rectangular wave form.
* See Fig. 4
On PC board 9mm
2
island(.013mm thick copper pad area)
I
FSM
Max. Peak One Cycle Non-Repetitive
40
5s Sine or 3s Rect. pulse
Surge Current * See Fig. 6
10
10ms Sine or 6ms Rect. pulse
E
AS
Non-Repetitive Avalanche Energy
2.0
mJ
T
J
= 25 C, I
AS
= 1A, L = 4mH
I
AR
Repetitive Avalanche Current
1.0
A
Parameters
10MQ Units
Conditions
A
Following any rated
load condition and
with rated V
RRM
applied
<
thermal runaway condition for a diode on its own heatsink
(*) dPtot
1
dTj
Rth( j-a)
10MQ060N
Bulletin PD-20519 rev. L 0
7/04
3
www.irf.com
Fig. 2 - Typical Peak Reverse Current
Vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop Characteristics
0.1
1
10
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
I
n
s
t
an
t
ane
ou
s
F
o
r
w
a
r
d
Cu
r
r
en
t
-
I
(
A
)
T = 150C
T = 125C
T = 25C
J
J
J
F
FM
Forward Voltage Drop - V (V)
0.0001
0.001
0.01
0.1
1
10
100
0
10
20
30
40
50
60
R
R
125C
100C
75C
50C
25C
R
e
v
e
rs
e
C
u
rre
n
t
-
I
(
m
A
)
T = 150C
J
Reverse Voltage - V (V)
10
100
0
10
20
30
40
50
60
T = 25C
J
R
T
J
u
n
c
t
i
o
n
C
apac
i
t
a
n
c
e
-
C
(
p
F
)
Reverse Voltage - V (V)
10MQ060N
Bulletin PD-20519 rev. L 0
7/04
4
www.irf.com
Fig. 4 - Maximum Average Forward Current
Vs. Allowable Lead Temperature
Fig. 5 - Maximum Average Forward Dissipation
Vs. Average Forward Current
Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration
1
10
100
10
100
1000
10000
FS
M
p
At Any Rated Load Condition
And With Rated V Applied
Following Surge
RRM
N
o
n-
R
e
p
e
t
i
t
i
v
e
S
u
r
g
e
C
u
r
r
en
t
-
I
(
A
)
Square Wave Pulse Duration - t (microsec)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
0.4
0.8
1.2
1.6
2
2.4
DC
A
v
er
a
ge
P
o
we
r
L
o
s
s
-
(
W
at
t
s
)
F(AV)
RMS Limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
Average Forward Current - I (A)
(2) Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= 80% rated V
R
70
80
90
100
110
120
130
140
150
0
0.4
0.8
1.2
1.6
2
2.4
DC
A
l
l
o
wa
b
l
e Ca
s
e
T
e
m
p
er
at
u
r
e -
(
C
)
F(AV)
see note (2)
Square wave (D = 0.50)
80% Rated V applied
R
Average Forward Current - I (A)
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
10MQ060N
Bulletin PD-20519 rev. L 0
7/04
5
www.irf.com
IR LOGO
"Y" = 1st digit of the YEAR "standard product"
"P" = "Lead-Free"
2nd digit of the YEAR
SITE ID
WEEK
IR1H
CURRENT
VOLTAGE
YYWWX
2.50 (.098)
2.90 (.114)
4.00 (.157)
4.60 (.181)
1.40 (.055)
1.60 (.062)
.152 (.006)
.305 (.012)
2.00 (.078)
2.44 (.096)
0.76 (.030)
1.52 (.060)
.103 (.004)
.203 (.008)
4.80 (.188)
5.28 (.208)
2.10 MAX.
(.085 MAX. )
5.53 (.218)
1.27 MIN.
(.050 MIN.)
1.47 MIN.
(.058 MIN.)
SOLDERING PAD
CA T HO DE
A NODE
1
2
1
2
P OLA RIT Y
P A RT NU M B E R
Device Marking: IR1H
Dimensions in millimeters and (inches)
Outline SMA
For recommended footprint and soldering techniques refer to application note #AN-994
Outline Table
Marking & Identification
Each device has 2 rows for identification. The first row designates the device as manufactured by International
Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and
Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.
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