MEDIUM POWER THYRISTORS
Stud Version
10RIA SERIES
1
10A
Bulletin I2405 rev. A 07/00
I
T(AV)
10
A
@ T
C
85
C
I
T(RMS)
25
A
I
TSM
@
50Hz
225
A
@ 60Hz
240
A
I
2
t
@
50Hz
255
A
2
s
@ 60Hz
233
A
2
s
V
DRM
/V
RRM
100 to 1200
V
t
q
typical
110
s
T
J
- 65 to 125
C
Parameters
10RIA
Unit
Major Ratings and Characteristics
Features
Improved glass passivation for high reliability
and exceptional stability at high temperature
High di/dt and dv/dt capabilities
Standard package
Low thermal resistance
Metric threads version available
Types up to 1200V V
DRM
/ V
RRM
Typical Applications
Medium power switching
Phase control applications
Can be supplied to meet stringent military,
aerospace and other high-reliability requirements
Case Style
TO-208AA (TO-48)
www.irf.com
10RIA Series
Bulletin I2405 rev. A 07/00
2
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I
T(AV)
Max. average on-state current
10
A
180 conduction, half sine wave
@ Case temperature
85
C
I
T(RMS)
Max. RMS on-state current
25
A
I
TSM
Max. peak, one-cycle
225
t = 10ms
No voltage
non-repetitive surge current
240
t = 8.3ms
reapplied
190
t = 10ms
100% V
RRM
200
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
255
t = 10ms
No voltage
Initial T
J
= T
J
max.
233
t = 8.3ms
reapplied
180
t = 10ms
100% V
RRM
165
t = 8.3ms
reapplied
I
2
t
Maximum I
2
t for fusing
2550
A
2
s
t = 0.1 to 10ms, no voltage reapplied
V
T(TO)1
Low level value of threshold
1.10
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
voltage
V
T(TO)
2
High level value of threshold
1.39
(I >
x I
T(AV)
), T
J
= T
J
max.
voltage
r
t1
Low level value of on-state
24.3
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
slope resistance
r
t2
High level value of on-state
16.7
(I >
x I
T(AV)
), T
J
= T
J
max.
slope resistance
V
TM
Max. on-state voltage
1.75
V
I
pk
= 32A, T
J
= 25C t
p
= 10ms sine pulse
I
H
Maximum holding current
130
I
L
Typical latching current
200
Parameter
10RIA
Units
Conditions
On-state Conduction
A
2
s
m
V
A
mA
T
J
= 25C, anode supply 12V resistive load
Voltage
V
DRM
/V
RRM
, max. repetitive
V
RSM
, maximum non-
I
DRM
/I
RRM
max.
Type number
Code
peak and off-state voltage (1)
repetitive peak voltage (2)
@ T
J
= T
J
max.
V
V
mA
10
100
150
20
20
200
300
40
400
500
60
600
700
10RIA
80
800
900
10
100
1000
1100
120
1200
1300
ELECTRICAL SPECIFICATIONS
Voltage Ratings
(1)
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/s
(2)
For voltage pulses with t
p
5ms
10RIA Series
Bulletin I2405 rev. A 07/00
3
www.irf.com
dv/dt
Max. critical rate of rise of
100
T
J
= T
J
max. linear to 100% rated V
DRM
off-state voltage
300 (*)
T
J
= T
J
max. linear to 67% rated V
DRM
V/s
Parameter
10RIA
Units Conditions
Blocking
P
GM
Maximum peak gate power
8.0
T
J
= T
J
max.
P
G(AV)
Maximum average gate power
2.0
I
GM
Max. peak positive gate current
1.5
A
T
J
= T
J
max.
-V
GM
Maximum peak negative
10
V
T
J
= T
J
max.
gate voltage
I
GT
DC gate current required
90
T
J
= - 65C
to trigger
60
mA
T
J
= 25C
35
T
J
= 125C
V
GT
DC gate voltage required
3.0
T
J
= - 65C
to trigger
2.0
V
T
J
= 25C
1.0
V
T
J
= 125C
I
GD
DC gate current not to trigger
2.0
mA
T
J
= T
J
max., V
DRM
= rated value
V
GD
DC gate voltage not to trigger
0.2
V
T
J
= T
J
max.
V
DRM
= rated value
W
Max. required gate trigger current/
voltage are the lowest value which
will trigger all units 6V anode-to-
cathode applied
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
Parameter
10RIA
Units Conditions
Triggering
di/dt
Max. rate of rise of turned-on
T
J
= T
J
max., V
DM
= rated V
DRM
current
V
DRM
600V
200
A/s
Gate pulse = 20V, 15
, t
p
= 6s, t
r
= 0.1s max.
V
DRM
800V
180
I
TM
= (2x rated di/dt) A
V
DRM
1000V
160
V
DRM
1600V
150
t
gt
Typical turn-on time
0.9
T
J
= 25C,
at = rated V
DRM
/V
RRM
, T
J
= 125C
t
rr
Typical reverse recovery time
4
s
T
J
= T
J
max.,
I
TM
= I
T(AV)
, t
p
> 200s, di/dt = -10A/s
t
q
Typical turn-off time
110
T
J
= T
J
max., I
TM
= I
T(AV)
, t
p
> 200s,
V
R
= 100V,
di/dt = -10A/s, dv/dt = 20V/s linear to
67% V
DRM
, gate bias 0V-100W
Parameter
10RIA
Units Conditions
Switching
(**) Available with: dv/dt = 1000V/s, to complete code add S90 i.e. 10RIA120S90.
(*) t
q
= 10sup to 600V, t
q
= 30s up to 1600V available on special request.
10RIA Series
Bulletin I2405 rev. A 07/00
4
www.irf.com
T
J
Max. operating temperature range
- 65 to 125
C
T
stg
Max. storage temperature range
- 65 to 125
C
R
thJC
Max. thermal resistance,
1.85
K/W
DC operation
junction to case
R
thCS
Max. thermal resistance,
0.35
K/W
Mounting surface, smooth, flat and greased
case to heatsink
T
Mounting torque
to nut
to device
20(27.5)
25
lbf-in
Lubricated threads
0.23(0.32)
0.29
kgf.m
(Non-lubricated threads)
2.3(3.1)
2.8
Nm
Case style
TO-208AA (TO-48)
See Outline Table
Parameter
10RIA
Units Conditions
Thermal and Mechanical Specification
R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
180
0.44
0.32
K/W
T
J
= T
J
max.
120
0.53
0.56
90
0.68
0.75
60
1.01
1.05
30
1.71
1.73
Conduction angle
Sinusoidal conduction Rectangular conduction Units
Conditions
Ordering Information Table
1
10
RIA 120
M
S90
Device Code
4
3
2
1
-
Current code
2
-
Essential part number
3
-
Voltage code: Code x 10 = V
RRM
(See Voltage Rating Table)
4
-
None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A
M
= Stud base TO-208AA (TO-48) M6 X 1
5
-
Critical dv/dt: None = 300V/s (Standard value)
S90 = 1000V/s (Special selection)
5
wt
Approximate weight
14 (0.49)
g (oz)
10RIA Series
Bulletin I2405 rev. A 07/00
5
www.irf.com
Outline Table
Fig. 1 - Current Ratings Characteristic
Fig. 2 - Current Ratings Characteristic
Case Style TO-208AA (TO-48)
All dimensions in millimeters (inches)
40
50
60
70
80
90
100
110
120
130
0
2
4
6
8
10 12 14 16 18
30
60
90
120
180
Average On-state Current (A)
Ma
x
i
mu
m A
l
l
o
w
a
b
l
e
C
a
s
e
T
e
m
p
e
r
a
t
u
r
e
(
C)
Conduction Angle
10RIA Series
R (DC) = 1.85 K/W
thJC
40
50
60
70
80
90
100
110
120
130
0
5
10
15
20
25
30
DC
30
60
90
120
180
Average On-state Current (A)
M
a
x
i
m
u
m
A
l
l
o
w
a
b
l
e C
a
s
e
T
e
m
p
er
a
t
ur
e
(
C
)
Conduction Period
10RIA Series
R (DC) = 1.85 K/W
thJC
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