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1
PHASE CONTROL SCR
Bulletin I2115
16TTS.. SERIES
V
T
<1.4V @ 10A
I
TSM
= 200A
V
R
/ V
D
= 1200V
Description/Features
The 16TTS.. new series of silicon controlled recti-
fiers are specifically designed for medium power
switching and phase control applications. The
glass passivation technology used has reliable
operation up to 125 C junction temperature.
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identi-
cal package outlines.
Major Ratings and Characteristics
TO-220AC
Capacitive input filter T
A
= 55C, T
J
= 125C,
13.5
17
A
common heatsink of 1C/W
Output Current in Typical Applications
Applications
Single-phase Bridge
Three-phase Bridge Units
I
T(AV)
Sinusoidal
10
A
waveform
I
RMS
16
A
V
RRM
/ V
DRM
800 and 1200
V
I
TSM
200
A
V
T
@ 10 A, T
J
= 25C
1.4
V
dv/dt
500
V/s
di/dt
150
A/s
T
J
- 40 to 125
C
Characteristics
16TTS..S
Units
Also available in SMD-220 package (series 16TTS..S)
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2
16TTS.. Series
Part Number
V
RRM
, maximum
V
DRM
, maximum
I
RRM
/
I
DRM
peak reverse voltage
peak direct voltage
125C
V
V
mA
16TTS08
800
800
5
16TTS12
1200
1200
Voltage Ratings
I
T(AV)
Max. Average On-state Current
10
A
50% duty cycle @ T
C
= 98 C, sinusoidal wave form
I
RMS
Max. RMS On-state Current
16
I
TSM
Max. Peak One Cycle Non-Repetitive
170
10ms Sine pulse, rated V
RRM
applied
Surge Current
200
10ms Sine pulse, no voltage reapplied
I
2
t
Max. I
2
t for fusing
144
A
2
s
10ms Sine pulse, rated V
RRM
applied
200
10ms Sine pulse, no voltage reapplied
I
2
t
Max. I
2
t for fusing
2000
A
2
s
t = 0.1 to 10ms, no voltage reapplied
V
TM
Max. On-state Voltage Drop
1.4
V
@ 10A, T
J
= 25C
r
t
On-state slope resistance
24.0
m
T
J
= 125C
V
T(TO)
Threshold Voltage
1.1
V
I
RM
/I
DM
Max.Reverse and Direct
0.5
mA
T
J
= 25 C
Leakage Current
5.0
T
J
= 125 C
I
H
Max. Holding Current
100
mA
Anode Supply = 6V, Resistive load, Initial I
T
=1A
I
L
Max. Latching Current
200
mA
Anode Supply = 6V, Resistive load
dv/dt Max. rate of rise of off-state Voltage
500
V/s
di/dt
Max. rate of rise of turned-on Current
150
A/s
Absolute Maximum Ratings
Parameters
16TTS..
Units
Conditions
V
R
= rated V
RRM
/ V
DRM
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3
16TTS.. Series
Triggering
P
GM
Max. peak Gate Power
8.0
W
P
G(AV)
Max. average Gate Power
2.0
+ I
GM
Max. paek positive Gate Current
1.5
A
- V
GM
Max. paek negative Gate Voltage
10
V
I
GT
Max. required DC Gate Current
90
mA
Anode supply = 6V, resistive load, T
J
= - 65C
to trigger
60
Anode supply = 6V, resistive load, T
J
= 25C
35
Anode supply = 6V, resistive load, T
J
= 125C
V
GT
Max. required DC Gate Voltage
3.0
V
Anode supply = 6V, resistive load, T
J
= - 65C
to trigger
2.0
Anode supply = 6V, resistive load, T
J
= 25C
1.0
Anode supply = 6V, resistive load, T
J
= 125C
V
GD
Max. DC Gate Voltage not to trigger
0.2
T
J
= 125C, V
DRM
= rated value
I
GD
Max. DC Gate Current not to trigger
2.0
mA
T
J
= 125C, V
DRM
= rated value
Parameters
16TTS..
Units
Conditions
Switching
Parameters
16TTS..
Units
Conditions
t
gt
Typical turn-on time
0.9
s
T
J
= 25C
t
rr
Typical reverse recovery time
4
T
J
= 125C
t
q
Typical turn-off time
110
T
J
Max. Junction Temperature Range
- 40 to 125
C
T
stg
Max. Storage Temperature Range
- 40 to 125
R
thJC
Max. Thermal Resistance Junction
1.3
C/W
DC operation
to Case
R
thJA
Max. Thermal Resistance Junction
62
to Ambient
R
thCS
Typ. Thermal Resistance Case
0.5
Mounting surface, smooth and greased
to Ambient
wt
Approximate Weight
2 (0.07)
g (oz.)
T
Mounting Torque
Min.
6 (5)
Max.
12 (10)
Case Style
TO-220AC
Thermal-Mechanical Specifications
Parameters
16TTS..
Units
Conditions
Kg-cm
(Ibf-in)
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4
16TTS.. Series
Fig. 2 - Current Rating Characteristics
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 1 - Current Rating Characteristics
90
95
100
105
110
115
120
125
0
2
4
6
8
10
12
30
60
90
120
180
C on duction An g le
Average On-state Current (A)
M
a
x
i
mu
m A
l
l
o
w
a
b
l
e
C
a
s
e
T
e
mp
e
r
a
t
u
r
e
(
C)
16TTS.. Series
R (DC) = 1.3 K/W
thJC
90
95
100
105
110
115
120
125
0
2
4
6
8
10
12
14
16
DC
30
60
90
120
180
M
a
x
i
mu
m A
l
l
o
w
a
b
l
e
C
a
s
e
T
e
m
p
e
r
a
t
u
r
e
(
C
)
Conduction Period
Average On-state Current (A)
16TTS.. Series
R (DC) = 1.3 K/W
thJC
0
5
10
15
20
0
2
4
6
8
10
12
RMS Limit
180
120
90
60
30
Conduction Angle
Average On-state Current (A)
M
a
x
i
m
u
m
A
v
er
a
g
e
O
n
-
s
t
a
t
e
Po
w
e
r
L
o
s
s
(
W
)
16TTS..
T = 125C
J
0
5
10
15
20
25
0
2
4
6
8
10 12 14 16 18
DC
180
120
90
60
30
RMS Limit
Conduction Period
Average On-state Current (A)
M
a
x
i
mu
m
A
v
e
r
a
g
e
O
n
-
s
t
a
t
e
P
o
w
e
r
L
o
s
s
(
W
)
16TTS..
T = 125C
J
80
100
120
140
160
180
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
At Any Rated Load Condition And With
Rated V Applied Following Surge.
Initial T = 125C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
RRM
J
P
e
a
k
H
a
l
f
S
i
n
e
W
a
v
e
On
-st
a
t
e
C
u
r
r
e
n
t
(
A
)
16TTS..Series
60
80
100
120
140
160
180
200
220
0.01
0.1
1
10
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
P
e
a
k
H
a
l
f
S
i
n
e
W
a
v
e
F
o
rw
ard
C
u
rre
n
t
(
A
)
Versus Pulse Train Duration.
Initial T = 125C
No Voltage Reapplied
Rated V Reapplied
J
RRM
16TTS.. Series
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5
16TTS.. Series
Fig. 7 - On-state Voltage Drop Characteristics
Fig. 8 - Gate Characteristics
Fig. 9 - Thermal Impedance Z
thJC
Characteristics
1
10
100
1000
0
1
2
3
4
5
T = 25C
J
T = 125C
J
Instantaneous On-state Voltage (V)
Ins
t
a
n
t
a
n
e
o
u
s
O
n
-
s
ta
te
C
u
r
r
e
nt
(
A
)
16TTS.. Series
0.1
1
10
100
0.001
0.01
0.1
1
10
100
(b)
(a)
Rectangular gate pulse
(4)
(3)
(2) (1)
Instantaneous Gate Current (A)
I
n
st
a
n
t
a
n
e
o
u
s
Ga
t
e
V
o
lt
a
g
e
(
V
)
TJ
=
2
5
C
T
J
=
1
25 C
b)Recommended load line for
VGD
IGD
Frequency Limited by PG(AV)
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 s, tp >= 6 s
<= 30% rated di/dt: 10 V, 65 ohms
tr = 1 s, tp >= 6 s
(1) PGM = 40 , tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
TJ
=
-
1
0
C
16TTS..
0.01
0.1
1
10
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
th
JC
Steady State Value
(DC Operation)
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
I
m
p
e
d
a
n
c
e
Z
(
K
/
W
)
16TTS.. Series
Single Pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
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