1
SURFACE MOUNTABLE
PHASE CONTROL SCR
Bulletin I2105 rev. D 12/98
SAFE
IR
Series
16TTS..S
V
T
< 1.4V @ 10A
I
TSM
= 200A
V
RRM
= 800 to 1600V
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Major Ratings and Characteristics
D
2
PAK (SMD-220)
I
T(AV)
Sinusoidal
10
A
waveform
I
RMS
16
A
V
RRM
/ V
DRM
up to 1600
V
I
TSM
200
A
V
T
@ 10 A, T
J
= 25C
1.4
V
dv/dt
500
V/s
di/dt
150
A/s
T
J
- 40 to 125
C
Characteristics
16TTS..S
Units
Output Current in Typical Applications
T
A
= 55C, T
J
= 125C, footprint 300mm
2
NEMA FR-4 or G10 glass fabric-based epoxy
2.5
3.5
with 4 oz (140m) copper
Aluminum IMS, R
thCA
= 15C/W
6.3
9.5
A
Aluminum IMS with heatsink, R
thCA
= 5C/W
14.0
18.5
Applications
Single-phase Bridge
Three-phase Bridge Units
Description/Features
The 16TTS..S
SAFE
IR
series of silicon controlled
rectifiers are specifically designed for medium
power switching and phase control applications.
The glass passivation technology used has reli-
able operation up to 125 C junction temperature.
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identi-
cal package outlines.
Package Outline
2
16TTS.. S
SAFE
IR
Series
Bulletin I2105 rev. D 12/98
www.irf.com
Part Number
V
RRM
, maximum
V
DRM
, maximum
I
RRM
/
I
DRM
peak reverse voltage
peak direct voltage
125C
V
V
mA
16TTS08S
800
800
10
16TTS12S
1200
1200
16TTS16S
1600
1600
Voltage Ratings
I
T(AV)
Max. Average On-state Current
10
A
@ T
C
= 98 C, 180 conduction half sine wave
I
RMS
Max. RMS On-state Current
16
I
TSM
Max. Peak One Cycle Non-Repetitive
170
10ms Sine pulse, rated V
RRM
applied
Surge Current
200
10ms Sine pulse, no voltage reapplied
I
2
t
Max. I
2
t for fusing
144
A
2
s
10ms Sine pulse, rated V
RRM
applied
200
10ms Sine pulse, no voltage reapplied
I
2
t
Max. I
2
t for fusing
2000
A
2
s
t = 0.1 to 10ms, no voltage reapplied
V
TM
Max. On-state Voltage Drop
1.4
V
@ 10A, T
J
= 25C
r
t
On-state slope resistance
24.0
m
T
J
= 125C
V
T(TO)
Threshold Voltage
1.1
V
I
RM
/I
DM
Max.Reverse and Direct
0.5
mA
T
J
= 25 C
Leakage Current
10
T
J
= 125 C
I
H
Holding Current
Typ.
Max.
Anode Supply = 6V, Resistive load, Initial I
T
=1A
--
100
mA
16TTS08S, 16TTS12S
100
150
16TTS16S
I
L
Max. Latching Current
200
mA
Anode Supply = 6V, Resistive load
dv/dt Max. Rate of Rise of off-state Voltage
500
V/s
di/dt Max. Rate of Rise of turned-on Current
150
A/s
Absolute Maximum Ratings
Parameters
16TTS..S
Units
Conditions
V
R
= rated V
RRM
/ V
DRM
3
16TTS.. S
SAFE
IR
Series
Bulletin I2105 rev. D 12/98
www.irf.com
Triggering
P
GM
Max. peak Gate Power
8.0
W
P
G(AV)
Max. average Gate Power
2.0
+ I
GM
Max. paek positive Gate Current
1.5
A
- V
GM
Max. paek negative Gate Voltage
10
V
I
GT
Max. required DC Gate Current
90
mA
Anode supply = 6V, resistive load, T
J
= - 10C
to trigger
60
Anode supply = 6V, resistive load, T
J
= 25C
35
Anode supply = 6V, resistive load, T
J
= 125C
V
GT
Max. required DC Gate Voltage
3.0
V
Anode supply = 6V, resistive load, T
J
= - 10C
to trigger
2.0
Anode supply = 6V, resistive load, T
J
= 25C
1.0
Anode supply = 6V, resistive load, T
J
= 125C
V
GD
Max. DC Gate Voltage not to trigger
0.25
T
J
= 125C, V
DRM
= rated value
I
GD
Max. DC Gate Current not to trigger
2.0
mA
T
J
= 125C, V
DRM
= rated value
Parameters
16TTS..S Units
Conditions
Switching
Parameters
16TTS..S
Units
Conditions
t
gt
Typical turn-on time
0.9
s
T
J
= 25C
t
rr
Typical reverse recovery time
4
T
J
= 125C
t
q
Typical turn-off time
110
T
J
Max. Junction Temperature Range
- 40 to 125
C
T
stg
Max. Storage Temperature Range
- 40 to 125
C
Soldering Temperature
240
C
for 10 seconds (1.6mm from case)
R
thJC
Max. Thermal Resistance Junction
1.3
C/W
DC operation
to Case
R
thJA
Typ. Thermal Resistance Junction
40
C/W
to Ambient (PCB Mount)**
wt
Approximate Weight
2 (0.07)
g (oz.)
T
Case Style
D
2
Pak (SMD-220)
Thermal-Mechanical Specifications
Parameters
16TTS..S Units
Conditions
**When mounted on 1" square (650mm
2
) PCB of FR-4 or G-10 material 4 oz (140m) copper 40C/W
For recommended footprint and soldering techniques refer to application note #AN-994
4
16TTS.. S
SAFE
IR
Series
Bulletin I2105 rev. D 12/98
www.irf.com
Fig. 2 - Current Rating Characteristics
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 1 - Current Rating Characteristics
90
95
100
105
110
115
120
125
0
2
4
6
8
10
12
30
60
90
120
180
Conduction Angle
Average On-state Current (A)
M
a
x
i
m
u
m
A
l
l
o
wabl
e
C
a
se
T
e
m
pe
r
a
t
u
r
e
(
C
)
16TTS.. Series
R (DC) = 1.3 C/W
thJC
90
95
100
105
110
115
120
125
0
2
4
6
8
10
12
14
16
DC
30
60
90
120
180
M
a
x
i
m
u
m
A
l
l
o
w
a
b
l
e C
a
s
e
T
e
m
p
er
a
t
u
r
e (
C
)
Conduction Period
Average On-state Current (A)
16TTS.. Series
R (DC) = 1.3 C/W
thJC
0
2
4
6
8
10
12
14
16
18
0
1
2
3
4
5
6
7
8
9
10 11
RMS Limit
180
120
90
60
30
Conduction Angle
Average On-state Current (A)
M
a
x
i
m
u
m
A
v
e
r
ag
e
O
n
-
s
t
a
t
e
P
o
we
r
Lo
s
s
(
W
)
16TTS.. Series
T = 125C
J
0
5
10
15
20
25
0
2
4
6
8
10
12
14
16
18
DC
180
120
90
60
30
RMS Limit
Conduction Period
Average On-state Current (A)
M
a
x
i
m
u
m
A
v
e
r
ag
e
O
n
-
s
t
a
t
e
P
o
we
r
Lo
ss
(
W
)
16TTS.. Series
T = 125C
J
80
100
120
140
160
180
1
10
100
Number Of Equal Amplitude Half C ycle Current Pulses (N)
At Any Rated Load Condition And With
Rated V Applied Following Surge.
Initial T = 125C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
RRM
J
P
e
ak
Hal
f
S
i
ne
W
a
v
e
O
n
-
s
t
a
t
e
C
u
r
r
e
nt
(
A
)
16TTS..Series
80
100
120
140
160
180
200
0.01
0.1
1
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
P
e
ak
H
a
l
f
S
i
ne
W
a
v
e
F
o
r
war
d C
u
r
r
e
n
t
(
A
)
Versus Pulse Train Duration.
Initial T = 125C
No Voltage Reapplied
Rated V Reapplied
J
RRM
16TTS.. Series
5
16TTS.. S
SAFE
IR
Series
Bulletin I2105 rev. D 12/98
www.irf.com
Fig. 7 - On-state Voltage Drop Characteristics
Fig. 9 - Gate Characteristics
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
1
10
100
1000
0
1
2
3
4
5
T = 25C
J
T = 125C
J
Instantaneous On-st ate Voltage (V)
I
n
st
an
t
a
ne
o
u
s O
n
-
s
t
a
t
e
C
u
r
r
e
nt
(
A
)
16TTS.. Series
0.1
1
10
100
0.001
0.01
0.1
1
10
100
(b)
(a)
Rectangular gate pulse
(4)
(3)
(2)
(1)
Instantaneous Gate Current (A)
I
n
s
t
a
n
ta
n
e
o
u
s
G
a
te
V
o
l
t
a
g
e
(
V
)
TJ
=
2
5
C
T
J
=
125
C
b)Recommended load line for
VGD
IGD
Frequency Limited by PG(AV)
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 s, tp >= 6 s
<= 30% rated di/dt: 10 V, 65 ohms
tr = 1 s, tp >= 6 s
(1) PGM = 40 , tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
T
J
=
-
10
C
16TTS.. Series
0.01
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
th
J
C
Steady State Value
(DC Operation)
16TTS.. Series
Single Pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
T
r
a
n
s
i
en
t
T
h
er
m
a
l I
m
p
e
d
a
n
c
e Z
(
C
/
W
)
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