1
SURFACE MOUNTABLE
PHASE CONTROL SCR
Bulletin I2117
25TTS..S SERIES
V
T
< 1.25V @ 16A
I
TSM
= 250A
V
R
/ V
D
= 1200V
Major Ratings and Characteristics
D
2
PAK (SMD-220)
I
T(AV)
Sinusoidal
16
A
waveform
I
RMS
25
A
V
RRM
/ V
DRM
800 and 1200
V
I
TSM
250
A
V
T
@ 16 A, T
J
= 25C
1.25
V
dv/dt
500
V/s
di/dt
150
A/s
T
J
- 40 to 125
C
Characteristics
25TTS..S
Units
Output Current in Typical Applications
T
A
= 55C, T
J
= 125C, footprint 300mm
2
NEMA FR-4 or G10 glass fabric-based epoxy
3.5
5.5
with 4 oz (140m) copper
Aluminum IMS, R
thCA
= 15C/W
8.5
13.5
A
Aluminum IMS with heatsink, R
thCA
= 5C/W
16.5
25.0
Applications
Single-phase Bridge
Three-phase Bridge Units
Description/Features
The 25TTS..S new series of silicon controlled
rectifiers are specifically designed for medium
power switching and phase control applications.
The glass passivation technology used has reli-
able operation up to 125 C junction temperature.
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identi-
cal package outlines.
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2
25TTS.. S Series
Part Number
V
RRM
, maximum
V
DRM
, maximum
I
RRM
/
I
DRM
peak reverse voltage
peak direct voltage
125C
V
V
mA
25TTS08S
800
800
5
25TTS12S
1200
1200
Voltage Ratings
I
T(AV)
Max. Average On-state Current
16
A
50% duty cycle @ T
C
= 94 C, sinusoidal wave form
I
RMS
Max. RMS On-state Current
25
I
TSM
Max. Peak One Cycle Non-Repetitive
210
10ms Sine pulse, rated V
RRM
applied
Surge Current
250
10ms Sine pulse, no voltage reapplied
I
2
t
Max. I
2
t for fusing
220
A
2
s
10ms Sine pulse, rated V
RRM
applied
310
10ms Sine pulse, no voltage reapplied
I
2
t
Max. I
2
t for fusing
3100
A
2
s
t = 0.1 to 10ms, no voltage reapplied
V
TM
Max. On-state Voltage Drop
1.25
V
@ 16A, T
J
= 25C
r
t
On-state slope resistance
12.0
m
T
J
= 125C
V
T(TO)
Threshold Voltage
1.0
V
I
RM
/I
DM
Max.Reverse and Direct
0.5
mA
T
J
= 25 C
Leakage Current
5.0
T
J
= 125 C
I
H
Max. Holding Current
100
mA
Anode Supply = 6V, Resistive load, Initial I
T
=1A
I
L
Max. Latching Current
200
mA
Anode Supply = 6V, Resistive load
dv/dt Max. rate of rise of off-state Voltage
500
V/s
di/dt
Max. rate of rise of turned-on Current
150
A/s
Absolute Maximum Ratings
Parameters
25TTS..S
Units
Conditions
V
R
= rated V
RRM
/ V
DRM
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3
25TTS.. S Series
Triggering
P
GM
Max. peak Gate Power
8.0
W
P
G(AV)
Max. average Gate Power
2.0
+ I
GM
Max. paek positive Gate Current
1.5
A
- V
GM
Max. paek negative Gate Voltage
10
V
I
GT
Max. required DC Gate Current
60
mA
Anode supply = 6V, resistive load, T
J
= - 10C
to trigger
45
Anode supply = 6V, resistive load, T
J
= 25C
20
Anode supply = 6V, resistive load, T
J
= 125C
V
GT
Max. required DC Gate Voltage
2.5
V
Anode supply = 6V, resistive load, T
J
= - 10C
to trigger
2.0
Anode supply = 6V, resistive load, T
J
= 25C
1.0
Anode supply = 6V, resistive load, T
J
= 125C
V
GD
Max. DC Gate Voltage not to trigger
0.25
T
J
= 125C, V
DRM
= rated value
I
GD
Max. DC Gate Current not to trigger
2.0
mA
T
J
= 125C, V
DRM
= rated value
Parameters
25TTS..S Units
Conditions
Switching
Parameters
25TTS..S
Units
Conditions
t
gt
Typical turn-on time
0.9
s
T
J
= 25C
t
rr
Typical reverse recovery time
4
T
J
= 125C
t
q
Typical turn-off time
110
T
J
Max. Junction Temperature Range
- 40 to 125
C
T
stg
Max. Storage Temperature Range
- 40 to 125
C
Soldering Temperature
240
C
for 10 seconds (1.6mm from case)
R
thJC
Max. Thermal Resistance Junction
1.1
C/W
DC operation
to Case
R
thJA
Typ. Thermal Resistance Junction
40
C/W
to Ambient (PCB Mount)**
wt
Approximate Weight
2 (0.07)
g (oz.)
T
Case Style
D
2
Pak (SMD-220)
Thermal-Mechanical Specifications
Parameters
25TTS..S Units
Conditions
**When mounted on 1" square (650mm
2
) PCB of FR-4 or G-10 material 4 oz (140m) copper 40C/W
For recommended footprint and soldering techniques refer to application note #AN-994
To Order
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4
25TTS.. S Series
Fig. 2 - Current Rating Characteristics
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 1 - Current Rating Characteristics
90
95
100
105
110
115
120
125
0
2
4
6
8
10 12 14 16 18
30
60
90
120
180
C onduction An g le
25TTS.. Series
R (DC) = 1.1 K/W
thJC
Average On-state Current (A)
M
a
x
i
mu
m
A
l
l
o
w
a
b
l
e
C
a
s
e
T
e
mp
e
r
a
t
u
r
e
(
C
)
85
90
95
100
105
110
115
120
125
0
5
10
15
20
25
30
DC
30
60
90
120
180
M
a
x
i
mu
m A
l
l
o
wa
b
l
e
C
a
s
e
T
e
mp
e
r
a
t
u
r
e
(
C
)
Conduction Period
25TTS.. Series
R (DC) = 1.1 K/W
thJC
Average On-state Current (A)
0
5
10
15
20
25
30
0
5
10
15
20
RMS Limit
180
120
90
60
30
Conduction Angle
25TTS..
T = 125C
J
Average On-state Current (A)
M
a
x
i
mu
m A
v
e
r
a
g
e
O
n
-
s
t
a
t
e
P
o
we
r
L
o
s
s
(
W
)
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
DC
180
120
90
60
30
RMS Limit
Conduction Period
Average On-state Current (A)
M
a
x
i
mu
m A
v
e
r
a
g
e
O
n
-
s
t
a
t
e
P
o
we
r
L
o
s
s
(
W
)
25TTS..
T = 125C
J
90
110
130
150
170
190
210
230
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
At Any Rated Load Condition And With
Rated V Applied Following Surge.
25TTS..Series
Initial T = 125C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
RRM
J
P
e
a
k
H
a
l
f
S
i
n
e
W
a
v
e
O
n
-
s
ta
te
C
u
r
r
e
nt
(
A
)
70
90
110
130
150
170
190
210
230
250
270
0.01
0.1
1
10
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
P
e
ak
H
a
l
f
S
i
n
e
W
a
v
e
F
o
r
w
ard
C
u
r
r
e
n
t
(
A
)
Versus Pulse Train Duration.
Initial T = 125C
No Voltage Reapplied
Rated V Reapplied
J
RRM
25TTS.. Series
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5
25TTS.. S Series
Fig. 7 - On-state Voltage Drop Characteristics
Fig. 8 - Gate Characteristics
Fig. 9 - Thermal Impedance Z
thJC
Characteristics
1
10
100
1000
0
1
2
3
4
5
T = 25C
J
T = 125C
J
25TTS.. Series
Instantaneous On-state Voltage (V)
Ins
t
a
n
t
a
n
e
o
u
s
O
n
-
s
ta
te
C
u
r
r
e
nt
(
A
)
0.1
1
10
100
0.001
0.01
0.1
1
10
100
(b)
(a)
Rectangular gate pulse
(4)
(3)
(2) (1)
Instantaneous Gate Current (A)
I
n
st
a
n
t
a
n
e
o
u
s Ga
t
e
V
o
l
t
a
g
e
(
V
)
T
J
=
25
C
T
J
=
1
25
C
b)Recommended load line for
VGD
IGD
Frequency Limited by PG(AV)
25TTS..
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 s, tp >= 6 s
<= 30% rated di/dt: 10 V, 65 ohms
tr = 1 s, tp >= 6 s
(1) PGM = 40 , tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
TJ
=
-
1
0
C
0.01
0.1
1
10
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
th
J
C
Steady State Value
(DC Operation)
T
r
a
n
s
i
en
t
T
h
er
m
a
l
I
m
p
e
d
a
n
c
e
Z
(
K
/
W
)
25TTS.. Series
Single Pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
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